DE2343206C2 - - Google Patents
Info
- Publication number
- DE2343206C2 DE2343206C2 DE19732343206 DE2343206A DE2343206C2 DE 2343206 C2 DE2343206 C2 DE 2343206C2 DE 19732343206 DE19732343206 DE 19732343206 DE 2343206 A DE2343206 A DE 2343206A DE 2343206 C2 DE2343206 C2 DE 2343206C2
- Authority
- DE
- Germany
- Prior art keywords
- source region
- gate electrode
- region
- transistor arrangement
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8595072A JPS4941081A (US07655688-20100202-C00086.png) | 1972-08-28 | 1972-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2343206A1 DE2343206A1 (de) | 1974-03-14 |
| DE2343206C2 true DE2343206C2 (US07655688-20100202-C00086.png) | 1987-05-21 |
Family
ID=13873026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732343206 Granted DE2343206A1 (de) | 1972-08-28 | 1973-08-27 | Feldeffekt-transistoranordnung |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10350702A1 (de) * | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Bauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikumschicht robusten Struktur |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL50821A (en) * | 1975-12-03 | 1978-10-31 | Hughes Aircraft Co | Resistive gate mos switch |
-
1972
- 1972-08-28 JP JP8595072A patent/JPS4941081A/ja active Pending
-
1973
- 1973-08-27 DE DE19732343206 patent/DE2343206A1/de active Granted
- 1973-08-28 GB GB4043973A patent/GB1432989A/en not_active Expired
- 1973-08-28 NL NL7311854A patent/NL7311854A/xx not_active Application Discontinuation
- 1973-08-28 AT AT746773A patent/AT349530B/de not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10350702A1 (de) * | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Bauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikumschicht robusten Struktur |
| DE10350702B4 (de) * | 2003-10-30 | 2007-08-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1432989A (en) | 1976-04-22 |
| NL7311854A (US07655688-20100202-C00086.png) | 1974-03-04 |
| DE2343206A1 (de) | 1974-03-14 |
| ATA746773A (de) | 1978-09-15 |
| AT349530B (de) | 1979-04-10 |
| JPS4941081A (US07655688-20100202-C00086.png) | 1974-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8176 | Proceedings suspended because of application no: |
Ref document number: 2323471 Country of ref document: DE Format of ref document f/p: P |
|
| 8178 | Suspension cancelled | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |