DE2337973A1 - Hochempfindlicher halbleiterdehnungsmesstreifen und verfahren zu seiner herstellung - Google Patents
Hochempfindlicher halbleiterdehnungsmesstreifen und verfahren zu seiner herstellungInfo
- Publication number
- DE2337973A1 DE2337973A1 DE19732337973 DE2337973A DE2337973A1 DE 2337973 A1 DE2337973 A1 DE 2337973A1 DE 19732337973 DE19732337973 DE 19732337973 DE 2337973 A DE2337973 A DE 2337973A DE 2337973 A1 DE2337973 A1 DE 2337973A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- cadmium sulfide
- semiconductor layer
- semiconductor
- measuring transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005259 measurement Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 32
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 21
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 claims description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 2
- YJLNSAVOCPBJTN-UHFFFAOYSA-N antimony;thallium Chemical compound [Tl]#[Sb] YJLNSAVOCPBJTN-UHFFFAOYSA-N 0.000 claims description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- -1 thallium nitride Chemical class 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 102000002508 Peptide Elongation Factors Human genes 0.000 claims 1
- 108010068204 Peptide Elongation Factors Proteins 0.000 claims 1
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 150000003346 selenoethers Chemical class 0.000 claims 1
- 238000002061 vacuum sublimation Methods 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003767 Gold(III) bromide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- OVWPJGBVJCTEBJ-UHFFFAOYSA-K gold tribromide Chemical compound Br[Au](Br)Br OVWPJGBVJCTEBJ-UHFFFAOYSA-K 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 1
- GCZKMPJFYKFENV-UHFFFAOYSA-K triiodogold Chemical compound I[Au](I)I GCZKMPJFYKFENV-UHFFFAOYSA-K 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00276269A US3805601A (en) | 1972-07-28 | 1972-07-28 | High sensitivity semiconductor strain gauge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2337973A1 true DE2337973A1 (de) | 1974-02-07 |
Family
ID=23055944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732337973 Pending DE2337973A1 (de) | 1972-07-28 | 1973-07-26 | Hochempfindlicher halbleiterdehnungsmesstreifen und verfahren zu seiner herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3805601A (enExample) |
| JP (1) | JPS4946877A (enExample) |
| DE (1) | DE2337973A1 (enExample) |
| FR (1) | FR2194963B1 (enExample) |
| GB (1) | GB1415445A (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314011B2 (enExample) * | 1973-10-13 | 1978-05-15 | ||
| US4089927A (en) * | 1975-09-26 | 1978-05-16 | Minnesota Mining And Manufacturing Company | Strain sensor employing bi layer piezoelectric polymer |
| US4078226A (en) * | 1977-03-16 | 1978-03-07 | The United States Of America As Represented By The United States Department Of Energy | Input apparatus for dynamic signature verification systems |
| US4141025A (en) * | 1977-03-24 | 1979-02-20 | Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" | Semiconductor structure sensitive to pressure |
| US4131880A (en) * | 1977-10-26 | 1978-12-26 | Burroughs Corporation | Signature verification pen |
| FR2496380A1 (fr) * | 1980-12-15 | 1982-06-18 | Thomson Csf | Dispositif piezoresistif a commande electrique |
| GB8322273D0 (en) * | 1983-08-18 | 1983-09-21 | Bell & Howell Co | Applying semiconductor material to substrate |
| US4683755A (en) * | 1985-11-15 | 1987-08-04 | Imo Delaval Inc. | Biaxial strain gage systems |
| US5483088A (en) * | 1994-08-12 | 1996-01-09 | S.R.I. International | Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1 |
| US5410178A (en) * | 1994-08-22 | 1995-04-25 | Northwestern University | Semiconductor films |
| EP0767986B1 (en) * | 1995-04-30 | 1999-12-01 | Koninklijke Philips Electronics N.V. | Battery recharging apparatus and method |
| US6058934A (en) * | 1995-11-02 | 2000-05-09 | Chiron Diagnostics Corporation | Planar hematocrit sensor incorporating a seven-electrode conductivity measurement cell |
| US5743985A (en) * | 1996-10-31 | 1998-04-28 | Owens-Corning Fiberglas Technology, Inc. | Method of making an asphalt and fiber laminated insulation product |
| US6729187B1 (en) * | 1999-04-29 | 2004-05-04 | The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations | Self-compensated ceramic strain gage for use at high temperatures |
| WO2002093740A1 (en) * | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Film bulk acoustic resonator |
| US6781159B2 (en) * | 2001-12-03 | 2004-08-24 | Xerox Corporation | Field emission display device |
| US6579735B1 (en) * | 2001-12-03 | 2003-06-17 | Xerox Corporation | Method for fabricating GaN field emitter arrays |
| US20050115329A1 (en) * | 2003-10-23 | 2005-06-02 | Gregory Otto J. | High temperature strain gages |
| JP4852041B2 (ja) * | 2004-08-10 | 2012-01-11 | デイジ プレシジョン インダストリーズ リミテッド | 剪断試験装置 |
| US7185545B2 (en) * | 2004-12-29 | 2007-03-06 | General Electric Company | Instrumentation and method for monitoring change in electric potential to detect crack growth |
| US20100237747A1 (en) * | 2005-12-19 | 2010-09-23 | Physical Logic Ag | Piezoelectric Composite Material |
| WO2007093799A1 (en) * | 2006-02-17 | 2007-08-23 | Dage Precision Industries Ltd. | Shear test apparatus and method |
| US8841818B2 (en) * | 2011-08-12 | 2014-09-23 | Massachusetts Institute Of Technology | Piezoelectric electromechanical devices |
| US9726587B2 (en) * | 2015-01-30 | 2017-08-08 | Stmicroelectronics S.R.L. | Tensile stress measurement device with attachment plates and related methods |
| CN107667069B (zh) * | 2015-06-26 | 2022-02-01 | 英特尔公司 | Iv族衬底上的iii-n mems结构 |
| US11585204B2 (en) | 2020-05-26 | 2023-02-21 | Heath Poulson | Crowding avoidance apparatus and method |
| US20250127457A1 (en) | 2021-08-09 | 2025-04-24 | University Of Oregon | Wireless measurement of suture tension |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1226647A (enExample) * | 1967-04-28 | 1971-03-31 | ||
| US3492513A (en) * | 1967-07-27 | 1970-01-27 | Lewis E Hollander Jr | Mesa t-bar piezoresistor |
| US3673354A (en) * | 1969-05-08 | 1972-06-27 | Matsushita Electric Industrial Co Ltd | Semiconductor stress transducer |
-
1972
- 1972-07-28 US US00276269A patent/US3805601A/en not_active Expired - Lifetime
-
1973
- 1973-07-18 GB GB3419373A patent/GB1415445A/en not_active Expired
- 1973-07-26 DE DE19732337973 patent/DE2337973A1/de active Pending
- 1973-07-27 FR FR7327622A patent/FR2194963B1/fr not_active Expired
- 1973-07-27 JP JP48084210A patent/JPS4946877A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4946877A (enExample) | 1974-05-07 |
| FR2194963A1 (enExample) | 1974-03-01 |
| GB1415445A (en) | 1975-11-26 |
| US3805601A (en) | 1974-04-23 |
| FR2194963B1 (enExample) | 1976-05-07 |
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