JPS4946877A - - Google Patents

Info

Publication number
JPS4946877A
JPS4946877A JP48084210A JP8421073A JPS4946877A JP S4946877 A JPS4946877 A JP S4946877A JP 48084210 A JP48084210 A JP 48084210A JP 8421073 A JP8421073 A JP 8421073A JP S4946877 A JPS4946877 A JP S4946877A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48084210A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4946877A publication Critical patent/JPS4946877A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
JP48084210A 1972-07-28 1973-07-27 Pending JPS4946877A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00276269A US3805601A (en) 1972-07-28 1972-07-28 High sensitivity semiconductor strain gauge

Publications (1)

Publication Number Publication Date
JPS4946877A true JPS4946877A (ja) 1974-05-07

Family

ID=23055944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48084210A Pending JPS4946877A (ja) 1972-07-28 1973-07-27

Country Status (5)

Country Link
US (1) US3805601A (ja)
JP (1) JPS4946877A (ja)
DE (1) DE2337973A1 (ja)
FR (1) FR2194963B1 (ja)
GB (1) GB1415445A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065371A (ja) * 1973-10-13 1975-06-03

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089927A (en) * 1975-09-26 1978-05-16 Minnesota Mining And Manufacturing Company Strain sensor employing bi layer piezoelectric polymer
US4078226A (en) * 1977-03-16 1978-03-07 The United States Of America As Represented By The United States Department Of Energy Input apparatus for dynamic signature verification systems
US4141025A (en) * 1977-03-24 1979-02-20 Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" Semiconductor structure sensitive to pressure
US4131880A (en) * 1977-10-26 1978-12-26 Burroughs Corporation Signature verification pen
FR2496380A1 (fr) * 1980-12-15 1982-06-18 Thomson Csf Dispositif piezoresistif a commande electrique
GB8322273D0 (en) * 1983-08-18 1983-09-21 Bell & Howell Co Applying semiconductor material to substrate
US4683755A (en) * 1985-11-15 1987-08-04 Imo Delaval Inc. Biaxial strain gage systems
US5483088A (en) * 1994-08-12 1996-01-09 S.R.I. International Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
JP3736853B2 (ja) * 1995-04-30 2006-01-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バッテリ再充電装置
US6058934A (en) * 1995-11-02 2000-05-09 Chiron Diagnostics Corporation Planar hematocrit sensor incorporating a seven-electrode conductivity measurement cell
US5743985A (en) * 1996-10-31 1998-04-28 Owens-Corning Fiberglas Technology, Inc. Method of making an asphalt and fiber laminated insulation product
US6729187B1 (en) * 1999-04-29 2004-05-04 The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations Self-compensated ceramic strain gage for use at high temperatures
US6936837B2 (en) * 2001-05-11 2005-08-30 Ube Industries, Ltd. Film bulk acoustic resonator
US6781159B2 (en) * 2001-12-03 2004-08-24 Xerox Corporation Field emission display device
US6579735B1 (en) * 2001-12-03 2003-06-17 Xerox Corporation Method for fabricating GaN field emitter arrays
US20050115329A1 (en) * 2003-10-23 2005-06-02 Gregory Otto J. High temperature strain gages
EP1779086A2 (en) * 2004-08-10 2007-05-02 Dage precision Industries Ltd. Shear test device
US7185545B2 (en) * 2004-12-29 2007-03-06 General Electric Company Instrumentation and method for monitoring change in electric potential to detect crack growth
US20100237747A1 (en) * 2005-12-19 2010-09-23 Physical Logic Ag Piezoelectric Composite Material
JP5060494B2 (ja) * 2006-02-17 2012-10-31 デイジ プレシジョン インダストリーズ リミテッド せん断試験装置
US8841818B2 (en) * 2011-08-12 2014-09-23 Massachusetts Institute Of Technology Piezoelectric electromechanical devices
US9726587B2 (en) * 2015-01-30 2017-08-08 Stmicroelectronics S.R.L. Tensile stress measurement device with attachment plates and related methods
EP3313777B1 (en) * 2015-06-26 2020-11-04 Intel Corporation Group iii-n mems structures on a silicon substrate
US11585204B2 (en) 2020-05-26 2023-02-21 Heath Poulson Crowding avoidance apparatus and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1226647A (ja) * 1967-04-28 1971-03-31
US3492513A (en) * 1967-07-27 1970-01-27 Lewis E Hollander Jr Mesa t-bar piezoresistor
US3673354A (en) * 1969-05-08 1972-06-27 Matsushita Electric Ind Co Ltd Semiconductor stress transducer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065371A (ja) * 1973-10-13 1975-06-03
JPS5314011B2 (ja) * 1973-10-13 1978-05-15

Also Published As

Publication number Publication date
FR2194963B1 (ja) 1976-05-07
DE2337973A1 (de) 1974-02-07
GB1415445A (en) 1975-11-26
US3805601A (en) 1974-04-23
FR2194963A1 (ja) 1974-03-01

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