DE2331093C2 - Strahlungsabtastvorrichtung - Google Patents
StrahlungsabtastvorrichtungInfo
- Publication number
- DE2331093C2 DE2331093C2 DE2331093A DE2331093A DE2331093C2 DE 2331093 C2 DE2331093 C2 DE 2331093C2 DE 2331093 A DE2331093 A DE 2331093A DE 2331093 A DE2331093 A DE 2331093A DE 2331093 C2 DE2331093 C2 DE 2331093C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- potential
- voltage
- charge
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 claims description 160
- 239000004020 conductor Substances 0.000 claims description 74
- 238000003860 storage Methods 0.000 claims description 44
- 239000003990 capacitor Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000969 carrier Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000005070 sampling Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 description 24
- 239000007924 injection Substances 0.000 description 24
- 238000010894 electron beam technology Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/154—Charge-injection device [CID] image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26480372A | 1972-06-21 | 1972-06-21 | |
| US00264804A US3805062A (en) | 1972-06-21 | 1972-06-21 | Method and apparatus for sensing radiation and providing electrical readout |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2331093A1 DE2331093A1 (de) | 1974-01-17 |
| DE2331093C2 true DE2331093C2 (de) | 1983-09-22 |
Family
ID=26950769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2331093A Expired DE2331093C2 (de) | 1972-06-21 | 1973-06-19 | Strahlungsabtastvorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3805062A (show.php) |
| JP (1) | JPS5652462B2 (show.php) |
| CA (2) | CA1004357A (show.php) |
| DE (1) | DE2331093C2 (show.php) |
| GB (1) | GB1431209A (show.php) |
| NL (1) | NL185807C (show.php) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL184756C (nl) * | 1973-05-29 | 1989-10-16 | Gen Electric | Halfgeleiderinrichting voor het waarnemen van straling. |
| JPS5086993A (show.php) * | 1973-11-30 | 1975-07-12 | ||
| US3890500A (en) * | 1974-02-11 | 1975-06-17 | Gen Electric | Apparatus for sensing radiation and providing electrical readout |
| US4047187A (en) * | 1974-04-01 | 1977-09-06 | Canon Kabushiki Kaisha | System for exposure measurement and/or focus detection by means of image senser |
| US3937874A (en) * | 1975-01-09 | 1976-02-10 | General Electric Company | Offset voltage correction circuit for multiple video channel imager |
| US3988613A (en) * | 1975-05-02 | 1976-10-26 | General Electric Company | Radiation sensing and charge storage devices |
| US4024562A (en) * | 1975-05-02 | 1977-05-17 | General Electric Company | Radiation sensing and charge storage devices |
| US4233527A (en) * | 1975-06-20 | 1980-11-11 | Siemens Aktiengesellschaft | Charge injection device opto-electronic sensor |
| US4004148A (en) * | 1976-02-02 | 1977-01-18 | General Electric Company | Accumulation mode charge injection infrared sensor |
| US4079422A (en) * | 1976-10-12 | 1978-03-14 | Eastman Kodak Company | Charge injection device readout |
| US4099250A (en) * | 1976-12-20 | 1978-07-04 | Hughes Aircraft Company | Haddamard electronic readout means |
| US4165471A (en) * | 1977-07-25 | 1979-08-21 | Eastman Kodak Company | Optical sensor apparatus |
| US4322638A (en) * | 1980-01-16 | 1982-03-30 | Eastman Kodak Company | Image sensor adaptable for fast frame readout |
| US4316221A (en) * | 1980-08-05 | 1982-02-16 | General Electric Company | Apparatus for sequential row injection readout of CID imagers |
| JPS58211677A (ja) * | 1982-06-02 | 1983-12-09 | Nissan Motor Co Ltd | 光レ−ダ装置 |
| US4860073A (en) * | 1982-11-29 | 1989-08-22 | General Electric Company | Solid state imaging apparatus |
| US4574393A (en) | 1983-04-14 | 1986-03-04 | Blackwell George F | Gray scale image processor |
| US4672412A (en) * | 1983-11-09 | 1987-06-09 | General Electric Company | High fill-factor ac-coupled x-y addressable Schottky photodiode array |
| US4611124A (en) * | 1984-06-13 | 1986-09-09 | The United States Of America As Represented By The Secretary Of The Air Force | Fly's eye sensor nonlinear signal processing |
| US4729005A (en) * | 1985-04-29 | 1988-03-01 | General Electric Company | Method and apparatus for improved metal-insulator-semiconductor device operation |
| US4681440A (en) * | 1985-11-18 | 1987-07-21 | General Electric Company | High-sensitivity CID photometer/radiometer |
| JP3046100B2 (ja) * | 1991-07-22 | 2000-05-29 | 株式会社フォトロン | 画像記録装置 |
| US5226645A (en) * | 1992-03-11 | 1993-07-13 | Stewart Roger K | Baseball power swing trainer |
| US5969337A (en) * | 1997-04-29 | 1999-10-19 | Lucent Technologies Inc. | Integrated photosensing device for active pixel sensor imagers |
| US6065346A (en) * | 1999-03-29 | 2000-05-23 | Honeywell Inc. | Measurement system utilizing a sensor formed on a silicon on insulator structure |
| KR100370151B1 (ko) * | 2000-03-28 | 2003-01-29 | 주식회사 하이닉스반도체 | 씨씨디(ｃｃｄ) 이미지 센서 |
| US6541772B2 (en) * | 2000-12-26 | 2003-04-01 | Honeywell International Inc. | Microbolometer operating system |
| US20070012965A1 (en) * | 2005-07-15 | 2007-01-18 | General Electric Company | Photodetection system and module |
| US7589310B2 (en) * | 2006-06-05 | 2009-09-15 | Blaise Laurent Mouttet | Image correlation sensor |
| CN119559877A (zh) * | 2020-11-16 | 2025-03-04 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3488508A (en) * | 1965-12-30 | 1970-01-06 | Rca Corp | Solid state image sensor panel |
| FR1500945A (fr) * | 1966-08-10 | 1967-11-10 | Csf | Système générateur de signaux images pour télévision |
| US3609375A (en) * | 1968-07-19 | 1971-09-28 | Trw Inc | Solid state linear photosensor |
| US3521244A (en) * | 1968-10-23 | 1970-07-21 | Rca Corp | Electrical circuit for processing periodic signal pulses |
| DE2002133A1 (de) * | 1969-01-21 | 1970-07-23 | Gen Electric | Informationsspeicher,der beim Auslesen eine elektrische Ausgangsgroesse abgibt |
| US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
| US3660667A (en) * | 1970-06-22 | 1972-05-02 | Rca Corp | Image sensor array in which each element employs two phototransistors one of which stores charge |
| US3683193A (en) * | 1970-10-26 | 1972-08-08 | Rca Corp | Bucket brigade scanning of sensor array |
| US3721839A (en) * | 1971-03-24 | 1973-03-20 | Philips Corp | Solid state imaging device with fet sensor |
-
1972
- 1972-06-21 US US00264804A patent/US3805062A/en not_active Expired - Lifetime
- 1972-06-21 US US00264803A patent/US3786263A/en not_active Expired - Lifetime
-
1973
- 1973-06-06 CA CA173,347A patent/CA1004357A/en not_active Expired
- 1973-06-12 CA CA173,877A patent/CA1005152A/en not_active Expired
- 1973-06-19 DE DE2331093A patent/DE2331093C2/de not_active Expired
- 1973-06-20 GB GB2928873A patent/GB1431209A/en not_active Expired
- 1973-06-20 JP JP6883373A patent/JPS5652462B2/ja not_active Expired
- 1973-06-21 NL NLAANVRAGE7308610,A patent/NL185807C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5652462B2 (show.php) | 1981-12-12 |
| NL7308610A (show.php) | 1973-12-27 |
| CA1004357A (en) | 1977-01-25 |
| GB1431209A (en) | 1976-04-07 |
| NL185807C (nl) | 1990-07-16 |
| US3805062A (en) | 1974-04-16 |
| US3786263A (en) | 1974-01-15 |
| CA1005152A (en) | 1977-02-08 |
| DE2331093A1 (de) | 1974-01-17 |
| JPS4976493A (show.php) | 1974-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| Q176 | The application caused the suspense of an application |
Ref document number: 2405843 Country of ref document: DE |
|
| 8125 | Change of the main classification |
Ipc: H04N 3/15 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |