DE2324719A1 - Verfahren zur nachbehandlung dielektrischer anorganischer filme auf unterlagen - Google Patents

Verfahren zur nachbehandlung dielektrischer anorganischer filme auf unterlagen

Info

Publication number
DE2324719A1
DE2324719A1 DE19732324719 DE2324719A DE2324719A1 DE 2324719 A1 DE2324719 A1 DE 2324719A1 DE 19732324719 DE19732324719 DE 19732324719 DE 2324719 A DE2324719 A DE 2324719A DE 2324719 A1 DE2324719 A1 DE 2324719A1
Authority
DE
Germany
Prior art keywords
film
deposited
deposition
reactive gas
post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732324719
Other languages
German (de)
English (en)
Inventor
Lutz Dipl Chem Dr Fabian
Michael Dipl Chem Kleinert
Rainer Dipl Ing Moeller
Horst Dipl Chem Stelzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elektromat VEB
Original Assignee
Elektromat VEB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elektromat VEB filed Critical Elektromat VEB
Publication of DE2324719A1 publication Critical patent/DE2324719A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE19732324719 1972-08-01 1973-05-16 Verfahren zur nachbehandlung dielektrischer anorganischer filme auf unterlagen Pending DE2324719A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD16480172A DD97673A1 (cs) 1972-08-01 1972-08-01

Publications (1)

Publication Number Publication Date
DE2324719A1 true DE2324719A1 (de) 1974-02-07

Family

ID=5487706

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732324719 Pending DE2324719A1 (de) 1972-08-01 1973-05-16 Verfahren zur nachbehandlung dielektrischer anorganischer filme auf unterlagen

Country Status (2)

Country Link
DD (1) DD97673A1 (cs)
DE (1) DE2324719A1 (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022416A1 (fr) * 1979-07-06 1981-01-14 COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel Procédé d'hydrogénation de dispositifs à semi-conducteurs
EP0408062A3 (en) * 1989-07-14 1992-03-25 Hitachi, Ltd. Surface treatment method and apparatus therefor
EP0572704A1 (en) * 1992-06-05 1993-12-08 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022416A1 (fr) * 1979-07-06 1981-01-14 COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel Procédé d'hydrogénation de dispositifs à semi-conducteurs
FR2461359A1 (fr) * 1979-07-06 1981-01-30 Commissariat Energie Atomique Procede et appareil d'hydrogenation de dispositifs a semi-conducteurs
US4331486A (en) 1979-07-06 1982-05-25 Commissariat A L'energie Atomique Process for treating semiconductor devices under atomic hydrogen plasma
EP0408062A3 (en) * 1989-07-14 1992-03-25 Hitachi, Ltd. Surface treatment method and apparatus therefor
EP0572704A1 (en) * 1992-06-05 1993-12-08 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD

Also Published As

Publication number Publication date
DD97673A1 (cs) 1973-05-14

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