DE2300754A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2300754A1
DE2300754A1 DE19732300754 DE2300754A DE2300754A1 DE 2300754 A1 DE2300754 A1 DE 2300754A1 DE 19732300754 DE19732300754 DE 19732300754 DE 2300754 A DE2300754 A DE 2300754A DE 2300754 A1 DE2300754 A1 DE 2300754A1
Authority
DE
Germany
Prior art keywords
electrode
emitter
zone
junction
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19732300754
Other languages
German (de)
English (en)
Inventor
Peter Dipl Ing Dr Voss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19732300754 priority Critical patent/DE2300754A1/de
Priority to CH1709373A priority patent/CH566081A5/xx
Priority to FR7346081A priority patent/FR2213589B1/fr
Priority to JP744382A priority patent/JPS5725984B2/ja
Priority to IT1906274A priority patent/IT1006717B/it
Priority to GB36674A priority patent/GB1417953A/en
Priority to NL7400189A priority patent/NL7400189A/xx
Priority to SE7400173A priority patent/SE405527B/xx
Publication of DE2300754A1 publication Critical patent/DE2300754A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE19732300754 1973-01-08 1973-01-08 Thyristor Withdrawn DE2300754A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19732300754 DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor
CH1709373A CH566081A5 (es) 1973-01-08 1973-12-06
FR7346081A FR2213589B1 (es) 1973-01-08 1973-12-21
JP744382A JPS5725984B2 (es) 1973-01-08 1973-12-25
IT1906274A IT1006717B (it) 1973-01-08 1974-01-04 Tiristore
GB36674A GB1417953A (en) 1973-01-08 1974-01-04 Thyristors
NL7400189A NL7400189A (es) 1973-01-08 1974-01-07
SE7400173A SE405527B (sv) 1973-01-08 1974-01-07 Tyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732300754 DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (1)

Publication Number Publication Date
DE2300754A1 true DE2300754A1 (de) 1974-07-11

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732300754 Withdrawn DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Country Status (8)

Country Link
JP (1) JPS5725984B2 (es)
CH (1) CH566081A5 (es)
DE (1) DE2300754A1 (es)
FR (1) FR2213589B1 (es)
GB (1) GB1417953A (es)
IT (1) IT1006717B (es)
NL (1) NL7400189A (es)
SE (1) SE405527B (es)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
US4296427A (en) * 1976-05-31 1981-10-20 Tokyo Shibaura Electric Co., Ltd. Reverse conducting amplified gate thyristor with plate-like separator section
US4987087A (en) * 1988-05-19 1991-01-22 Siemens Aktiengesellschaft Process for manufacturing a thyristor with proton irradiation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4296427A (en) * 1976-05-31 1981-10-20 Tokyo Shibaura Electric Co., Ltd. Reverse conducting amplified gate thyristor with plate-like separator section
US4282542A (en) * 1978-10-09 1981-08-04 Licentia Patent-Verwaltungs-G.M.B.H. Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity
US4987087A (en) * 1988-05-19 1991-01-22 Siemens Aktiengesellschaft Process for manufacturing a thyristor with proton irradiation

Also Published As

Publication number Publication date
JPS49104580A (es) 1974-10-03
JPS5725984B2 (es) 1982-06-02
FR2213589A1 (es) 1974-08-02
FR2213589B1 (es) 1979-04-20
SE405527B (sv) 1978-12-11
GB1417953A (en) 1975-12-17
NL7400189A (es) 1974-07-10
IT1006717B (it) 1976-10-20
CH566081A5 (es) 1975-08-29

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Legal Events

Date Code Title Description
OD Request for examination
8139 Disposal/non-payment of the annual fee