JPS5725984B2 - - Google Patents
Info
- Publication number
- JPS5725984B2 JPS5725984B2 JP744382A JP438274A JPS5725984B2 JP S5725984 B2 JPS5725984 B2 JP S5725984B2 JP 744382 A JP744382 A JP 744382A JP 438274 A JP438274 A JP 438274A JP S5725984 B2 JPS5725984 B2 JP S5725984B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732300754 DE2300754A1 (de) | 1973-01-08 | 1973-01-08 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49104580A JPS49104580A (es) | 1974-10-03 |
| JPS5725984B2 true JPS5725984B2 (es) | 1982-06-02 |
Family
ID=5868522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP744382A Expired JPS5725984B2 (es) | 1973-01-08 | 1973-12-25 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5725984B2 (es) |
| CH (1) | CH566081A5 (es) |
| DE (1) | DE2300754A1 (es) |
| FR (1) | FR2213589B1 (es) |
| GB (1) | GB1417953A (es) |
| IT (1) | IT1006717B (es) |
| NL (1) | NL7400189A (es) |
| SE (1) | SE405527B (es) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2538549C2 (de) * | 1975-08-29 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Mit Licht steuerbarer Thyristor |
| JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
| DE2843960A1 (de) * | 1978-10-09 | 1980-04-10 | Licentia Gmbh | Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps |
| JPS5660058A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Semiconductor device |
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| EP0320738A3 (de) * | 1987-12-17 | 1991-02-06 | Siemens Aktiengesellschaft | Überkopfzündfester Thyristor |
| EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3432733A (en) * | 1966-04-22 | 1969-03-11 | Bbc Brown Boveri & Cie | Controllable semi-conductor element |
-
1973
- 1973-01-08 DE DE19732300754 patent/DE2300754A1/de not_active Withdrawn
- 1973-12-06 CH CH1709373A patent/CH566081A5/xx not_active IP Right Cessation
- 1973-12-21 FR FR7346081A patent/FR2213589B1/fr not_active Expired
- 1973-12-25 JP JP744382A patent/JPS5725984B2/ja not_active Expired
-
1974
- 1974-01-04 IT IT1906274A patent/IT1006717B/it active
- 1974-01-04 GB GB36674A patent/GB1417953A/en not_active Expired
- 1974-01-07 SE SE7400173A patent/SE405527B/xx unknown
- 1974-01-07 NL NL7400189A patent/NL7400189A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3432733A (en) * | 1966-04-22 | 1969-03-11 | Bbc Brown Boveri & Cie | Controllable semi-conductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| SE405527B (sv) | 1978-12-11 |
| FR2213589B1 (es) | 1979-04-20 |
| GB1417953A (en) | 1975-12-17 |
| DE2300754A1 (de) | 1974-07-11 |
| FR2213589A1 (es) | 1974-08-02 |
| NL7400189A (es) | 1974-07-10 |
| JPS49104580A (es) | 1974-10-03 |
| IT1006717B (it) | 1976-10-20 |
| CH566081A5 (es) | 1975-08-29 |