JPS49104580A - - Google Patents
Info
- Publication number
- JPS49104580A JPS49104580A JP438274A JP438274A JPS49104580A JP S49104580 A JPS49104580 A JP S49104580A JP 438274 A JP438274 A JP 438274A JP 438274 A JP438274 A JP 438274A JP S49104580 A JPS49104580 A JP S49104580A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732300754 DE2300754A1 (de) | 1973-01-08 | 1973-01-08 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49104580A true JPS49104580A (es) | 1974-10-03 |
| JPS5725984B2 JPS5725984B2 (es) | 1982-06-02 |
Family
ID=5868522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP744382A Expired JPS5725984B2 (es) | 1973-01-08 | 1973-12-25 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5725984B2 (es) |
| CH (1) | CH566081A5 (es) |
| DE (1) | DE2300754A1 (es) |
| FR (1) | FR2213589B1 (es) |
| GB (1) | GB1417953A (es) |
| IT (1) | IT1006717B (es) |
| NL (1) | NL7400189A (es) |
| SE (1) | SE405527B (es) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5660058A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Semiconductor device |
| JPS5718361A (en) * | 1980-05-23 | 1982-01-30 | Gen Electric | High voltage semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2538549C2 (de) * | 1975-08-29 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Mit Licht steuerbarer Thyristor |
| JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
| DE2843960A1 (de) * | 1978-10-09 | 1980-04-10 | Licentia Gmbh | Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps |
| EP0320738A3 (de) * | 1987-12-17 | 1991-02-06 | Siemens Aktiengesellschaft | Überkopfzündfester Thyristor |
| EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3432733A (en) * | 1966-04-22 | 1969-03-11 | Bbc Brown Boveri & Cie | Controllable semi-conductor element |
-
1973
- 1973-01-08 DE DE19732300754 patent/DE2300754A1/de not_active Withdrawn
- 1973-12-06 CH CH1709373A patent/CH566081A5/xx not_active IP Right Cessation
- 1973-12-21 FR FR7346081A patent/FR2213589B1/fr not_active Expired
- 1973-12-25 JP JP744382A patent/JPS5725984B2/ja not_active Expired
-
1974
- 1974-01-04 IT IT1906274A patent/IT1006717B/it active
- 1974-01-04 GB GB36674A patent/GB1417953A/en not_active Expired
- 1974-01-07 SE SE7400173A patent/SE405527B/xx unknown
- 1974-01-07 NL NL7400189A patent/NL7400189A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3432733A (en) * | 1966-04-22 | 1969-03-11 | Bbc Brown Boveri & Cie | Controllable semi-conductor element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5660058A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Semiconductor device |
| JPS6356709B2 (es) * | 1979-10-22 | 1988-11-09 | Tokyo Shibaura Electric Co | |
| JPS5718361A (en) * | 1980-05-23 | 1982-01-30 | Gen Electric | High voltage semiconductor device |
| JPH0222547B2 (es) * | 1980-05-23 | 1990-05-18 | Gen Electric |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5725984B2 (es) | 1982-06-02 |
| FR2213589A1 (es) | 1974-08-02 |
| FR2213589B1 (es) | 1979-04-20 |
| SE405527B (sv) | 1978-12-11 |
| GB1417953A (en) | 1975-12-17 |
| DE2300754A1 (de) | 1974-07-11 |
| NL7400189A (es) | 1974-07-10 |
| IT1006717B (it) | 1976-10-20 |
| CH566081A5 (es) | 1975-08-29 |