DE2250198A1 - Ladungsgekoppelte halbleiteranordnung - Google Patents
Ladungsgekoppelte halbleiteranordnungInfo
- Publication number
- DE2250198A1 DE2250198A1 DE2250198A DE2250198A DE2250198A1 DE 2250198 A1 DE2250198 A1 DE 2250198A1 DE 2250198 A DE2250198 A DE 2250198A DE 2250198 A DE2250198 A DE 2250198A DE 2250198 A1 DE2250198 A1 DE 2250198A1
- Authority
- DE
- Germany
- Prior art keywords
- areas
- semiconductor body
- charge
- doping
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000001465 metallisation Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000001609 comparable effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19740971A | 1971-11-10 | 1971-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2250198A1 true DE2250198A1 (de) | 1973-05-17 |
Family
ID=22729306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2250198A Pending DE2250198A1 (de) | 1971-11-10 | 1972-10-13 | Ladungsgekoppelte halbleiteranordnung |
Country Status (6)
-
1972
- 1972-09-22 IT IT29526/72A patent/IT967744B/it active
- 1972-10-13 DE DE2250198A patent/DE2250198A1/de active Pending
- 1972-10-18 FR FR7237923A patent/FR2159273B1/fr not_active Expired
- 1972-10-27 JP JP47107274A patent/JPS4859778A/ja active Pending
- 1972-11-02 GB GB5045972A patent/GB1396989A/en not_active Expired
- 1972-11-07 NL NL7215002A patent/NL7215002A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2159273A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-06-22 |
| NL7215002A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-05-14 |
| FR2159273B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-05-21 |
| IT967744B (it) | 1974-03-11 |
| JPS4859778A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-08-22 |
| GB1396989A (en) | 1975-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2107037C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2706623C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3688518T2 (de) | Halbleiteranordnungen mit Leitfähigkeitsmodulation. | |
| DE2107022C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE19848828A1 (de) | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit | |
| DE2412699A1 (de) | Halbleiteranordnung | |
| DE102008044408A1 (de) | Halbleiterbauelementanordnung mit niedrigem Einschaltwiderstand | |
| DE2359720C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE102008032796A1 (de) | Halbleitervorrichtung mit P-N-Säulenabschnitt | |
| DE2148948A1 (de) | Elektrischer kondensator in einer integrierten schaltung, insbesondere als speicher fuer halbleiterspeicher | |
| DE2252148C3 (de) | Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb | |
| DE3781295T2 (de) | Ladungsverschiebeanordnung. | |
| DE2432352C3 (de) | MNOS-Halbleiterspeicherelement | |
| DE1917013A1 (de) | Halbleitervierschichttriode | |
| DE102013215378A1 (de) | Lateraler Hochspannungstransistor und Verfahren zu seiner Herstellung | |
| DE19707513A1 (de) | Durch Feldeffekt steuerbares Halbleiterbauelement | |
| DE2504088A1 (de) | Ladungsgekoppelte anordnung | |
| DE2231565A1 (de) | Umsteuerbare zweiphasige ladungsgekoppelte baueinheit | |
| DE2201028B2 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
| DE19815907C1 (de) | Durch Feldeffekt steuerbares Halbleiterbauelement | |
| DE2250140C2 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE102005039331A1 (de) | Halbleiterbauelement mit niedrigem Einschaltwiderstand | |
| DE3213408A1 (de) | Ladungsgekoppelte anordnung | |
| DE2216060C3 (de) | Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium | |
| DE2051623A1 (de) | Steuerbare raumladungsbegrenzte Impedanzeinnchtung fur integrierte Schaltungen |