DE2239953A1 - Detektoranordnung - Google Patents
DetektoranordnungInfo
- Publication number
- DE2239953A1 DE2239953A1 DE2239953A DE2239953A DE2239953A1 DE 2239953 A1 DE2239953 A1 DE 2239953A1 DE 2239953 A DE2239953 A DE 2239953A DE 2239953 A DE2239953 A DE 2239953A DE 2239953 A1 DE2239953 A1 DE 2239953A1
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- semiconductor body
- detector arrangement
- flat side
- arrangement according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 2
- 230000005865 ionizing radiation Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2239953A DE2239953A1 (de) | 1972-08-14 | 1972-08-14 | Detektoranordnung |
| US380470A US3925669A (en) | 1972-08-14 | 1973-07-18 | Stripline radiation detection apparatus |
| FR7329573A FR2196523A1 (US07935154-20110503-C00006.png) | 1972-08-14 | 1973-08-13 | |
| JP48091252A JPS4987383A (US07935154-20110503-C00006.png) | 1972-08-14 | 1973-08-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2239953A DE2239953A1 (de) | 1972-08-14 | 1972-08-14 | Detektoranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2239953A1 true DE2239953A1 (de) | 1974-02-28 |
Family
ID=5853529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2239953A Pending DE2239953A1 (de) | 1972-08-14 | 1972-08-14 | Detektoranordnung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3925669A (US07935154-20110503-C00006.png) |
| JP (1) | JPS4987383A (US07935154-20110503-C00006.png) |
| DE (1) | DE2239953A1 (US07935154-20110503-C00006.png) |
| FR (1) | FR2196523A1 (US07935154-20110503-C00006.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4688067A (en) * | 1984-02-24 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages |
| DE3501974A1 (de) * | 1985-01-22 | 1986-07-24 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur strukturuntersuchung mit roentgenstrahlen |
| DE3633998A1 (de) * | 1986-10-06 | 1988-04-14 | Siemens Ag | Strahlendetektor |
| FR2689684B1 (fr) * | 1992-04-01 | 1994-05-13 | Commissariat A Energie Atomique | Dispositif de micro-imagerie de rayonnements ionisants. |
| DE10128654B4 (de) * | 2001-06-15 | 2008-04-10 | Forschungszentrum Jülich GmbH | Beidseitig mikrostrukturierter, ortsempfindlicher Detektor |
| CN106501840B (zh) * | 2016-11-13 | 2023-04-11 | 中国科学院近代物理研究所 | 一种质子重离子束流纵向束团形状测量探测器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL154329B (nl) * | 1966-03-01 | 1977-08-15 | Philips Nv | Inrichting voor het detecteren en/of meten van straling. |
| NL155369B (nl) * | 1967-09-15 | 1977-12-15 | Philips Nv | Neutronen-spectrometer. |
| NL6714455A (US07935154-20110503-C00006.png) * | 1967-10-25 | 1969-04-29 | ||
| US3812361A (en) * | 1971-11-03 | 1974-05-21 | Siemens Ag | Process and apparatus for visualizing gamma ray images |
-
1972
- 1972-08-14 DE DE2239953A patent/DE2239953A1/de active Pending
-
1973
- 1973-07-18 US US380470A patent/US3925669A/en not_active Expired - Lifetime
- 1973-08-13 FR FR7329573A patent/FR2196523A1/fr not_active Withdrawn
- 1973-08-14 JP JP48091252A patent/JPS4987383A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3925669A (en) | 1975-12-09 |
| FR2196523A1 (US07935154-20110503-C00006.png) | 1974-03-15 |
| JPS4987383A (US07935154-20110503-C00006.png) | 1974-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3813079A1 (de) | Roentgenstrahlen-detektoreinrichtung | |
| DE1953467A1 (de) | Halbleiter-Strahlungsdetektor | |
| DE3704716C2 (US07935154-20110503-C00006.png) | ||
| DE2239953A1 (de) | Detektoranordnung | |
| DE69633183T2 (de) | Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate | |
| DE102009015563A1 (de) | Röntgenstrahlungsdetektor zur Detektion von ionisierender Strahlung, insbesondere zur Verwendung in einem CT-System | |
| DE1960705A1 (de) | Target fuer ein Halbleiter-Dioden-Vidikon und dessen Herstellung | |
| DE2514409A1 (de) | Anordnung zur durchfuehrung eines verfahrens zum herstellen eines koerperschnittbildes | |
| DE2609626A1 (de) | Strahlennachweisvorrichtung | |
| EP0058230A1 (de) | Röntgen- und/oder Korpuskularstrahlungs-Halbleiterdetektor in integrierter Bauweise | |
| EP0156024B1 (de) | Detektorsystem | |
| DE2721694A1 (de) | Detektor zum nachweis ionisierender strahlung | |
| DE19711849C2 (de) | Röntgendetektoren mit semi-isolierendem Halbleiter-Substrat | |
| DE102011083532A1 (de) | Wandlerschicht für Strahlungsdetektoren | |
| DE2811382A1 (de) | Roentgendetektor | |
| DE1907971C3 (de) | Halbleiterdetektorelement und Halbleiterdetektor | |
| DE2543065A1 (de) | Verfahren zum herstellen einer ortsaufloesenden detektoranordnung | |
| DE2715965A1 (de) | Ionenkammeranordnung mit reduziertem totraum | |
| DE2459665C2 (de) | Anordnung zum Herstellen eines Körperschnittbildes mit fächerförmigen Bündeln von Röntgenstrahlen | |
| DE889956C (de) | Ionisationskammer | |
| DE102009008702A1 (de) | Direktumwandelndes Detektorelement für Röntgenstrahlung | |
| DE19620907A1 (de) | Monitor zum Messen der Radioaktivität einer Fläche | |
| DE2100558A1 (de) | Fotoelektronenröhren | |
| DE1489172C3 (de) | Bildwandler oder Bildverstärker mit einer der Elektronenvervielfachung dienenden Platte | |
| EP3029490B1 (de) | Detektorsystem mit streifenanode |
