DE2215168A1 - Photoempfindliche Halbleitervorrichtung - Google Patents

Photoempfindliche Halbleitervorrichtung

Info

Publication number
DE2215168A1
DE2215168A1 DE19722215168 DE2215168A DE2215168A1 DE 2215168 A1 DE2215168 A1 DE 2215168A1 DE 19722215168 DE19722215168 DE 19722215168 DE 2215168 A DE2215168 A DE 2215168A DE 2215168 A1 DE2215168 A1 DE 2215168A1
Authority
DE
Germany
Prior art keywords
semiconductor device
photosensitivity
areas
resistor
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722215168
Other languages
German (de)
English (en)
Inventor
Akio Ikeda; Fujita Takashi Toyonaka; Yamashita (Japan). P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2215168A1 publication Critical patent/DE2215168A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263Photothyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
DE19722215168 1971-04-01 1972-03-28 Photoempfindliche Halbleitervorrichtung Pending DE2215168A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023271 1971-04-01

Publications (1)

Publication Number Publication Date
DE2215168A1 true DE2215168A1 (de) 1972-10-19

Family

ID=12021418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722215168 Pending DE2215168A1 (de) 1971-04-01 1972-03-28 Photoempfindliche Halbleitervorrichtung

Country Status (6)

Country Link
AU (1) AU449040B2 (enrdf_load_stackoverflow)
CA (1) CA967274A (enrdf_load_stackoverflow)
DE (1) DE2215168A1 (enrdf_load_stackoverflow)
FR (1) FR2132286B1 (enrdf_load_stackoverflow)
GB (1) GB1368843A (enrdf_load_stackoverflow)
NL (1) NL7204333A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch

Also Published As

Publication number Publication date
FR2132286A1 (enrdf_load_stackoverflow) 1972-11-17
AU4069772A (en) 1973-10-11
GB1368843A (en) 1974-10-02
CA967274A (en) 1975-05-06
NL7204333A (enrdf_load_stackoverflow) 1972-10-03
FR2132286B1 (enrdf_load_stackoverflow) 1976-08-06
AU449040B2 (en) 1974-05-17

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