DE2213656A1 - Ladungsgekoppelte Halbleiteranordnung - Google Patents
Ladungsgekoppelte HalbleiteranordnungInfo
- Publication number
- DE2213656A1 DE2213656A1 DE19722213656 DE2213656A DE2213656A1 DE 2213656 A1 DE2213656 A1 DE 2213656A1 DE 19722213656 DE19722213656 DE 19722213656 DE 2213656 A DE2213656 A DE 2213656A DE 2213656 A1 DE2213656 A1 DE 2213656A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- areas
- semiconductor
- insulating layer
- metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000001465 metallisation Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 230000000284 resting effect Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 239000004020 conductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QLJCFNUYUJEXET-UHFFFAOYSA-K aluminum;trinitrite Chemical compound [Al+3].[O-]N=O.[O-]N=O.[O-]N=O QLJCFNUYUJEXET-UHFFFAOYSA-K 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12909871A | 1971-03-29 | 1971-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2213656A1 true DE2213656A1 (de) | 1972-10-12 |
Family
ID=22438445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722213656 Pending DE2213656A1 (de) | 1971-03-29 | 1972-03-21 | Ladungsgekoppelte Halbleiteranordnung |
Country Status (8)
| Country | Link |
|---|---|
| AU (1) | AU3944172A (enrdf_load_stackoverflow) |
| BE (1) | BE779499A (enrdf_load_stackoverflow) |
| CH (1) | CH539917A (enrdf_load_stackoverflow) |
| DE (1) | DE2213656A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2131959B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1375063A (enrdf_load_stackoverflow) |
| IT (1) | IT1044825B (enrdf_load_stackoverflow) |
| NL (1) | NL7203859A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646119A (en) * | 1971-01-14 | 1987-02-24 | Rca Corporation | Charge coupled circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| NL7106968A (enrdf_load_stackoverflow) * | 1970-07-20 | 1972-01-24 |
-
1972
- 1972-01-28 IT IT19888/72A patent/IT1044825B/it active
- 1972-02-08 FR FR727204903A patent/FR2131959B1/fr not_active Expired
- 1972-02-17 BE BE779499A patent/BE779499A/xx unknown
- 1972-02-21 GB GB789672A patent/GB1375063A/en not_active Expired
- 1972-02-28 AU AU39441/72A patent/AU3944172A/en not_active Expired
- 1972-03-13 CH CH367272A patent/CH539917A/de not_active IP Right Cessation
- 1972-03-21 DE DE19722213656 patent/DE2213656A1/de active Pending
- 1972-03-23 NL NL7203859A patent/NL7203859A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2131959A1 (enrdf_load_stackoverflow) | 1972-11-17 |
| CH539917A (de) | 1973-07-31 |
| GB1375063A (enrdf_load_stackoverflow) | 1974-11-27 |
| IT1044825B (it) | 1980-04-21 |
| FR2131959B1 (enrdf_load_stackoverflow) | 1974-06-28 |
| AU3944172A (en) | 1973-08-30 |
| BE779499A (fr) | 1972-06-16 |
| NL7203859A (enrdf_load_stackoverflow) | 1972-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2439799C2 (de) | Ladungsgekoppelte Anordnung, insbesondere Bildsensor | |
| DE2107037C3 (enrdf_load_stackoverflow) | ||
| DE2706623C2 (enrdf_load_stackoverflow) | ||
| DE2735651C2 (enrdf_load_stackoverflow) | ||
| DE2107022C3 (enrdf_load_stackoverflow) | ||
| DE2412699A1 (de) | Halbleiteranordnung | |
| DE3029539A1 (de) | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle | |
| DE102008056574A1 (de) | Halbleiterbauelement und Verfahren zur Herstellung desselben | |
| DE3781295T2 (de) | Ladungsverschiebeanordnung. | |
| DE1810322C3 (de) | Bipolarer Transistor für hohe Ströme und hohe Stromverstärkung | |
| EP1027735B1 (de) | Siliziumcarbid-junction-feldeffekttransistor | |
| DE2252148C3 (de) | Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb | |
| DE2456131A1 (de) | Fotosensible vorrichtung | |
| DE2504088A1 (de) | Ladungsgekoppelte anordnung | |
| DE2525093A1 (de) | Vorrichtung und verfahren zur ladungsregenerierung | |
| DE2231565A1 (de) | Umsteuerbare zweiphasige ladungsgekoppelte baueinheit | |
| AT393181B (de) | Bildaufnahmeanordnung | |
| DE10063443A1 (de) | Verfahren zur Herstellung einer Elektrode eines mittels Feldeffekt steuerbaren Halbleiterbauelements und mittels Feldeffekt steuerbares Halbleiterbauelement | |
| DE2250140C2 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE69629456T2 (de) | Feldeffekttransistor mit verminderter Verzögerungsänderung | |
| DE2151898C3 (de) | Ladungstransporteinrichtung | |
| DE2213656A1 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE2848576C2 (enrdf_load_stackoverflow) | ||
| DE2153675A1 (de) | Ladungsgekoppelte Baueinheit | |
| DE2209921C3 (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |