DE2206793A1 - Diffundierter Widerstand - Google Patents

Diffundierter Widerstand

Info

Publication number
DE2206793A1
DE2206793A1 DE19722206793 DE2206793A DE2206793A1 DE 2206793 A1 DE2206793 A1 DE 2206793A1 DE 19722206793 DE19722206793 DE 19722206793 DE 2206793 A DE2206793 A DE 2206793A DE 2206793 A1 DE2206793 A1 DE 2206793A1
Authority
DE
Germany
Prior art keywords
resistance
resistor
epitaxial layer
layer
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722206793
Other languages
German (de)
English (en)
Inventor
Gerald Scottsdale Ariz. Lunn (V.StA.). M
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE2206793A1 publication Critical patent/DE2206793A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
DE19722206793 1971-02-17 1972-02-12 Diffundierter Widerstand Pending DE2206793A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11614471A 1971-02-17 1971-02-17

Publications (1)

Publication Number Publication Date
DE2206793A1 true DE2206793A1 (de) 1972-10-05

Family

ID=22365518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722206793 Pending DE2206793A1 (de) 1971-02-17 1972-02-12 Diffundierter Widerstand

Country Status (3)

Country Link
US (1) US3700977A (enrdf_load_stackoverflow)
DE (1) DE2206793A1 (enrdf_load_stackoverflow)
NL (1) NL7201965A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936789A (en) * 1974-06-03 1976-02-03 Texas Instruments Incorporated Spreading resistance thermistor
US4229753A (en) * 1977-08-18 1980-10-21 International Business Machines Corporation Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
FR2430092A1 (fr) * 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
DE3376045D1 (en) * 1983-10-19 1988-04-21 Itt Ind Gmbh Deutsche Monolithic integrated circuit with at least one integrated resistor
DE4217408C1 (de) * 1992-05-26 1993-11-25 Texas Instruments Deutschland Integrierter Spannungsteiler
US6100153A (en) * 1998-01-20 2000-08-08 International Business Machines Corporation Reliable diffusion resistor and diffusion capacitor
US7068788B2 (en) * 2001-01-04 2006-06-27 Maxim Integrated Products, Inc. Data encryption for suppression of data-related in-band harmonics in digital to analog converters

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
US3517280A (en) * 1967-10-17 1970-06-23 Ibm Four layer diode device insensitive to rate effect and method of manufacture
US3569800A (en) * 1968-09-04 1971-03-09 Ibm Resistively isolated integrated current switch
US3534237A (en) * 1969-01-21 1970-10-13 Burroughs Corp Power isolation of integrated circuits

Also Published As

Publication number Publication date
US3700977A (en) 1972-10-24
NL7201965A (enrdf_load_stackoverflow) 1972-08-21

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