DE2164762A1 - Einrichtung und Verfahren zur Materialumwandlung - Google Patents
Einrichtung und Verfahren zur MaterialumwandlungInfo
- Publication number
- DE2164762A1 DE2164762A1 DE19712164762 DE2164762A DE2164762A1 DE 2164762 A1 DE2164762 A1 DE 2164762A1 DE 19712164762 DE19712164762 DE 19712164762 DE 2164762 A DE2164762 A DE 2164762A DE 2164762 A1 DE2164762 A1 DE 2164762A1
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- discharge
- pan
- discharge circuit
- cryogenic fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 23
- 238000006243 chemical reaction Methods 0.000 title claims description 13
- 239000003990 capacitor Substances 0.000 claims description 55
- 239000012530 fluid Substances 0.000 claims description 25
- 239000000523 sample Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 11
- 239000002887 superconductor Substances 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000010791 quenching Methods 0.000 claims description 5
- 230000000171 quenching effect Effects 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000011364 vaporized material Substances 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000010891 electric arc Methods 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009760 electrical discharge machining Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Discharge Heating (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10308670A | 1970-12-31 | 1970-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2164762A1 true DE2164762A1 (de) | 1972-07-27 |
Family
ID=22293319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712164762 Pending DE2164762A1 (de) | 1970-12-31 | 1971-12-27 | Einrichtung und Verfahren zur Materialumwandlung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3720598A (enExample) |
| JP (1) | JPS547966B1 (enExample) |
| DE (1) | DE2164762A1 (enExample) |
| FR (1) | FR2120783A5 (enExample) |
| GB (1) | GB1368972A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3925177A (en) * | 1973-01-30 | 1975-12-09 | Boeing Co | Method and apparatus for heating solid and liquid particulate material to vaporize or disassociate the material |
| US4036720A (en) * | 1976-10-22 | 1977-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Hydrogen isotope separation |
| US6730370B1 (en) * | 2000-09-26 | 2004-05-04 | Sveinn Olafsson | Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium |
| US7126810B1 (en) * | 2003-06-24 | 2006-10-24 | Mueller Otward M | Cryogenic capacitors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2934631A (en) * | 1955-06-30 | 1960-04-26 | Imalis Rose | Electrolytic metal shaping |
| US3122628A (en) * | 1963-01-31 | 1964-02-25 | Inone Kiyoshi | Electrical discharge grinding apparatus with automatic electrode reshaping provision |
| US3384467A (en) * | 1964-02-03 | 1968-05-21 | Avco Corp | Method of and means for converting coal |
| US3619549A (en) * | 1970-06-19 | 1971-11-09 | Union Carbide Corp | Arc torch cutting process |
-
1970
- 1970-12-31 US US00103086A patent/US3720598A/en not_active Expired - Lifetime
-
1971
- 1971-11-05 JP JP8771471A patent/JPS547966B1/ja active Pending
- 1971-11-24 GB GB5451271A patent/GB1368972A/en not_active Expired
- 1971-12-09 FR FR7144974A patent/FR2120783A5/fr not_active Expired
- 1971-12-27 DE DE19712164762 patent/DE2164762A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1368972A (en) | 1974-10-02 |
| FR2120783A5 (enExample) | 1972-08-18 |
| US3720598A (en) | 1973-03-13 |
| JPS547966B1 (enExample) | 1979-04-11 |
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