DE2160426A1 - Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte HalbleiteranordnungInfo
- Publication number
- DE2160426A1 DE2160426A1 DE19712160426 DE2160426A DE2160426A1 DE 2160426 A1 DE2160426 A1 DE 2160426A1 DE 19712160426 DE19712160426 DE 19712160426 DE 2160426 A DE2160426 A DE 2160426A DE 2160426 A1 DE2160426 A1 DE 2160426A1
- Authority
- DE
- Germany
- Prior art keywords
- mentioned
- emitter
- zone
- conductivity type
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000002513 implantation Methods 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 230000000873 masking effect Effects 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 118
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 78
- 230000007704 transition Effects 0.000 description 55
- 239000000377 silicon dioxide Substances 0.000 description 38
- 235000012239 silicon dioxide Nutrition 0.000 description 33
- 239000000370 acceptor Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 15
- -1 boron ions Chemical class 0.000 description 14
- 230000008859 change Effects 0.000 description 14
- 238000000137 annealing Methods 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000272517 Anseriformes Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5847770 | 1970-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2160426A1 true DE2160426A1 (de) | 1972-06-29 |
Family
ID=10481716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712160426 Pending DE2160426A1 (de) | 1970-12-09 | 1971-12-06 | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU3637971A (enrdf_load_stackoverflow) |
| DE (1) | DE2160426A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2117976A1 (enrdf_load_stackoverflow) |
| NL (1) | NL7116688A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0042380A4 (en) * | 1979-12-28 | 1983-04-18 | Ibm | Method for achieving ideal impurity base profile in a transistor. |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2206585B1 (enrdf_load_stackoverflow) * | 1972-11-13 | 1977-07-22 | Radiotechnique Compelec | |
| GB8610314D0 (en) * | 1986-04-28 | 1986-06-04 | British Telecomm | Bipolar transistor |
-
1971
- 1971-11-18 NL NL7116688A patent/NL7116688A/xx unknown
- 1971-12-02 AU AU36379/71A patent/AU3637971A/en not_active Expired
- 1971-12-06 DE DE19712160426 patent/DE2160426A1/de active Pending
- 1971-12-09 FR FR7144221A patent/FR2117976A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0042380A4 (en) * | 1979-12-28 | 1983-04-18 | Ibm | Method for achieving ideal impurity base profile in a transistor. |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2117976A1 (enrdf_load_stackoverflow) | 1972-07-28 |
| NL7116688A (enrdf_load_stackoverflow) | 1972-06-13 |
| AU3637971A (en) | 1973-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2160450C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
| DE2745857C2 (enrdf_load_stackoverflow) | ||
| DE1614283C3 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE69030415T2 (de) | Verfahren zur Herstellung eines DMOS Transistors | |
| DE2056220C3 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE2224634C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| EP0025854B1 (de) | Verfahren zum Herstellen von bipolaren Transistoren | |
| DE2133978A1 (de) | Verfahren zur Herstellung einer Halb leiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung | |
| DE1944793C3 (de) | Verfahren zur Herstellung einer integrierten Halbleiteranordnung | |
| DE4114174A1 (de) | Leistungstransistorbauteil sowie verfahren zu seiner herstellung | |
| DE2812740A1 (de) | Verfahren zum herstellen einer vertikalen, bipolaren integrierten schaltung | |
| DE2610828A1 (de) | Thyristor mit passivierter oberflaeche | |
| DE2103468C3 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE2749607B2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE3027599C2 (enrdf_load_stackoverflow) | ||
| DE2243592A1 (de) | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung | |
| DE2124764B2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3015782C2 (de) | Verfahren zur Herstellung eines Feldeffekttransistors mit isolierter Steuerelektrode | |
| DE2502547A1 (de) | Halbleiterkoerper mit bipolartransistor und verfahren zu dessen herstellung | |
| DE1614383B2 (de) | Verfahren zum herstellen eines halbleiterbauelementes | |
| DE2133979B2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3018594A1 (de) | Verfahren zur herstellung eines fet | |
| DE102022119699A1 (de) | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE2205991B2 (de) | Verfahren zur bildung eines fuer lawinendurchbruch vorgesehenen uebergangs in einem halbleiter-bauelement | |
| DE2060348C3 (de) | Verfahren zur Herstellung einer Halbleiteranordnung |