DE2156515C3 - Verfahren zum Herstellen eines magnetischen Mehrschichtenmaterials für BIasendomänenbauelemente - Google Patents
Verfahren zum Herstellen eines magnetischen Mehrschichtenmaterials für BIasendomänenbauelementeInfo
- Publication number
- DE2156515C3 DE2156515C3 DE2156515A DE2156515A DE2156515C3 DE 2156515 C3 DE2156515 C3 DE 2156515C3 DE 2156515 A DE2156515 A DE 2156515A DE 2156515 A DE2156515 A DE 2156515A DE 2156515 C3 DE2156515 C3 DE 2156515C3
- Authority
- DE
- Germany
- Prior art keywords
- film
- bubble
- iron
- multilayer material
- bubble domain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 58
- 229910052742 iron Inorganic materials 0.000 claims description 27
- 239000002223 garnet Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005415 magnetization Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- 239000002131 composite material Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 3
- 229910052727 yttrium Chemical group 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0858—Generating, replicating or annihilating magnetic domains (also comprising different types of magnetic domains, e.g. "Hard Bubbles")
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10023070A | 1970-12-21 | 1970-12-21 | |
| US9993770A | 1970-12-21 | 1970-12-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2156515A1 DE2156515A1 (de) | 1972-07-06 |
| DE2156515B2 DE2156515B2 (de) | 1973-11-08 |
| DE2156515C3 true DE2156515C3 (de) | 1974-07-18 |
Family
ID=26796644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2156515A Expired DE2156515C3 (de) | 1970-12-21 | 1971-11-10 | Verfahren zum Herstellen eines magnetischen Mehrschichtenmaterials für BIasendomänenbauelemente |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US3728697A (OSRAM) |
| JP (1) | JPS514056B1 (OSRAM) |
| CA (1) | CA939808A (OSRAM) |
| DE (1) | DE2156515C3 (OSRAM) |
| FR (1) | FR2119498A5 (OSRAM) |
| GB (1) | GB1367124A (OSRAM) |
| NL (2) | NL7113762A (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE790091A (fr) * | 1971-10-14 | 1973-04-13 | Philips Nv | Dispositif magnetique a domaines |
| US3911411A (en) * | 1972-12-29 | 1975-10-07 | Ibm | Magnetic domain systems using different types of domains |
| JPS5632767B2 (OSRAM) * | 1973-02-07 | 1981-07-30 | ||
| US3899779A (en) * | 1973-06-29 | 1975-08-12 | Ibm | Magnetic bubble domain system using different types of domains |
| US4001793A (en) * | 1973-07-02 | 1977-01-04 | Rockwell International Corporation | Magnetic bubble domain composite with hard bubble suppression |
| US4052707A (en) * | 1973-10-06 | 1977-10-04 | U.S. Philips Corporation | Magnetic device having domains of two different sizes in a single layer |
| NL7313755A (nl) * | 1973-10-06 | 1975-04-08 | Philips Nv | Magnetische inrichting met domeinen. |
| US3967002A (en) * | 1974-12-31 | 1976-06-29 | International Business Machines Corporation | Method for making high density magnetic bubble domain system |
| US4076573A (en) * | 1976-12-30 | 1978-02-28 | Rca Corporation | Method of making planar silicon-on-sapphire composite |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3526883A (en) * | 1968-10-09 | 1970-09-01 | Bell Telephone Labor Inc | Magnetic domain display device |
| US3585614A (en) * | 1969-05-23 | 1971-06-15 | Bell Telephone Labor Inc | Faraday effect readout of magnetic domains in magnetic materials exhibiting birefringence |
| US3643238A (en) * | 1969-11-17 | 1972-02-15 | Bell Telephone Labor Inc | Magnetic devices |
-
1970
- 1970-12-21 US US00099937A patent/US3728697A/en not_active Expired - Lifetime
- 1970-12-21 US US00100230A patent/US3728153A/en not_active Expired - Lifetime
-
1971
- 1971-09-21 CA CA123,309A patent/CA939808A/en not_active Expired
- 1971-10-07 NL NL7113762A patent/NL7113762A/xx not_active Application Discontinuation
- 1971-10-13 NL NL7114063A patent/NL7114063A/xx not_active Application Discontinuation
- 1971-11-10 DE DE2156515A patent/DE2156515C3/de not_active Expired
- 1971-12-08 JP JP46099806A patent/JPS514056B1/ja active Pending
- 1971-12-20 FR FR7145790A patent/FR2119498A5/fr not_active Expired
- 1971-12-21 GB GB5945771A patent/GB1367124A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3728697A (en) | 1973-04-17 |
| DE2156514B2 (de) | 1976-04-15 |
| NL7113762A (OSRAM) | 1972-06-23 |
| DE2156514A1 (de) | 1972-09-21 |
| JPS514056B1 (OSRAM) | 1976-02-07 |
| NL7114063A (OSRAM) | 1972-06-23 |
| US3728153A (en) | 1973-04-17 |
| DE2156515A1 (de) | 1972-07-06 |
| CA939808A (en) | 1974-01-08 |
| GB1367124A (en) | 1974-09-18 |
| FR2119498A5 (OSRAM) | 1972-08-04 |
| DE2156515B2 (de) | 1973-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |