DE2141188C3 - Vorrichtung für das tiegellose Zonenschmelzen - Google Patents
Vorrichtung für das tiegellose ZonenschmelzenInfo
- Publication number
- DE2141188C3 DE2141188C3 DE2141188A DE2141188A DE2141188C3 DE 2141188 C3 DE2141188 C3 DE 2141188C3 DE 2141188 A DE2141188 A DE 2141188A DE 2141188 A DE2141188 A DE 2141188A DE 2141188 C3 DE2141188 C3 DE 2141188C3
- Authority
- DE
- Germany
- Prior art keywords
- coaxial line
- capacitor
- rigid
- wall
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/28—Tubular capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Induction Heating (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Details (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2141188A DE2141188C3 (de) | 1971-08-17 | 1971-08-17 | Vorrichtung für das tiegellose Zonenschmelzen |
| NL7208496A NL7208496A (OSRAM) | 1971-08-17 | 1972-06-21 | |
| GB3247372A GB1349106A (en) | 1971-08-17 | 1972-07-12 | Apparatus for the non-crucible zone melting of semiconductor rods |
| JP7824672A JPS5522439B2 (OSRAM) | 1971-08-17 | 1972-08-04 | |
| IT28016/72A IT963844B (it) | 1971-08-17 | 1972-08-09 | Dispositivo per la fusione a zone senza crogiuolo |
| US00279482A US3769484A (en) | 1971-08-17 | 1972-08-10 | Apparatus and method for floating-zone melting of a semiconductor rod |
| FR7229313A FR2149483B1 (OSRAM) | 1971-08-17 | 1972-08-16 | |
| BE787668A BE787668A (fr) | 1971-08-17 | 1972-08-17 | Dispositif de fusion par zones sans creuset |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2141188A DE2141188C3 (de) | 1971-08-17 | 1971-08-17 | Vorrichtung für das tiegellose Zonenschmelzen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2141188A1 DE2141188A1 (de) | 1973-02-22 |
| DE2141188B2 DE2141188B2 (de) | 1979-01-11 |
| DE2141188C3 true DE2141188C3 (de) | 1979-09-13 |
Family
ID=5816983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2141188A Expired DE2141188C3 (de) | 1971-08-17 | 1971-08-17 | Vorrichtung für das tiegellose Zonenschmelzen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3769484A (OSRAM) |
| JP (1) | JPS5522439B2 (OSRAM) |
| BE (1) | BE787668A (OSRAM) |
| DE (1) | DE2141188C3 (OSRAM) |
| FR (1) | FR2149483B1 (OSRAM) |
| GB (1) | GB1349106A (OSRAM) |
| IT (1) | IT963844B (OSRAM) |
| NL (1) | NL7208496A (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2425468C3 (de) * | 1974-05-27 | 1979-01-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegellosen Zonenschmelzen eines kristallisierbaren Stabes |
| DE2538812A1 (de) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | Verfahren zum dotieren von halbleiterstaeben |
| JPS5290543A (en) * | 1976-01-23 | 1977-07-29 | Iwao Hishida | Granular compositions of waxes |
| DE2700856A1 (de) * | 1977-01-11 | 1978-07-13 | Raphael Dr Leonhardt | Vorrichtung zum zuechten von kristallen oder fuer dgl. verfahren |
| JPS6114114U (ja) * | 1984-07-02 | 1986-01-27 | マツダ株式会社 | モ−ル取付用クリツプ |
| JP2503077B2 (ja) * | 1989-07-05 | 1996-06-05 | 日本碍子株式会社 | 電気ヒ―タ及びそれを用いた加熱方法 |
| US20130112134A1 (en) * | 2009-02-23 | 2013-05-09 | Giga Industries, Inc. | Method and Systems for Characterization and Production of High Quality Silicon |
| EP3057184B1 (de) * | 2015-02-11 | 2017-01-25 | MD Elektronik GmbH | Verfahren und Vorrichtung zum Herstellen eines Kabels sowie ein nach dem Verfahren hergestelltes Kabel |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1076623B (de) * | 1957-11-15 | 1960-03-03 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial |
| US3339130A (en) * | 1964-07-02 | 1967-08-29 | Gen Motors Corp | Capacitor means |
| US3484679A (en) * | 1966-10-03 | 1969-12-16 | North American Rockwell | Electrical apparatus for changing the effective capacitance of a cable |
| DE1916317C3 (de) * | 1969-03-29 | 1975-07-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Stromzuführung für eine Induktionsspule beim tiegelfreien Zonenschmelzen |
-
1971
- 1971-08-17 DE DE2141188A patent/DE2141188C3/de not_active Expired
-
1972
- 1972-06-21 NL NL7208496A patent/NL7208496A/xx unknown
- 1972-07-12 GB GB3247372A patent/GB1349106A/en not_active Expired
- 1972-08-04 JP JP7824672A patent/JPS5522439B2/ja not_active Expired
- 1972-08-09 IT IT28016/72A patent/IT963844B/it active
- 1972-08-10 US US00279482A patent/US3769484A/en not_active Expired - Lifetime
- 1972-08-16 FR FR7229313A patent/FR2149483B1/fr not_active Expired
- 1972-08-17 BE BE787668A patent/BE787668A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2141188A1 (de) | 1973-02-22 |
| IT963844B (it) | 1974-01-21 |
| FR2149483B1 (OSRAM) | 1976-01-23 |
| FR2149483A1 (OSRAM) | 1973-03-30 |
| US3769484A (en) | 1973-10-30 |
| BE787668A (fr) | 1972-12-18 |
| JPS5522439B2 (OSRAM) | 1980-06-17 |
| JPS4829607A (OSRAM) | 1973-04-19 |
| GB1349106A (en) | 1974-03-27 |
| NL7208496A (OSRAM) | 1973-02-20 |
| DE2141188B2 (de) | 1979-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |