DE2130002A1 - Schaltungsanordnung mit mehreren Feldeffekttransistoren - Google Patents

Schaltungsanordnung mit mehreren Feldeffekttransistoren

Info

Publication number
DE2130002A1
DE2130002A1 DE19712130002 DE2130002A DE2130002A1 DE 2130002 A1 DE2130002 A1 DE 2130002A1 DE 19712130002 DE19712130002 DE 19712130002 DE 2130002 A DE2130002 A DE 2130002A DE 2130002 A1 DE2130002 A1 DE 2130002A1
Authority
DE
Germany
Prior art keywords
transistor
transistors
current path
voltage
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712130002
Other languages
German (de)
English (en)
Inventor
Horishi Amemiya
Vallon Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2130002A1 publication Critical patent/DE2130002A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE19712130002 1970-09-18 1971-06-16 Schaltungsanordnung mit mehreren Feldeffekttransistoren Pending DE2130002A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7350770A 1970-09-18 1970-09-18
US13632771A 1971-04-22 1971-04-22

Publications (1)

Publication Number Publication Date
DE2130002A1 true DE2130002A1 (de) 1972-03-30

Family

ID=26754545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712130002 Pending DE2130002A1 (de) 1970-09-18 1971-06-16 Schaltungsanordnung mit mehreren Feldeffekttransistoren

Country Status (5)

Country Link
US (2) US3638039A (OSRAM)
DE (1) DE2130002A1 (OSRAM)
FR (1) FR2106593A1 (OSRAM)
GB (1) GB1338959A (OSRAM)
NL (1) NL7107967A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801964A (en) * 1972-02-24 1974-04-02 Advanced Memory Sys Inc Semiconductor memory with address decoding
US3789243A (en) * 1972-07-05 1974-01-29 Ibm Monolithic memory sense amplifier/bit driver having active bit/sense line pull-up
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3967136A (en) * 1974-06-07 1976-06-29 Bell Telephone Laboratories, Incorporated Input circuit for semiconductor charge transfer device circulating memory apparatus
US4110840A (en) * 1976-12-22 1978-08-29 Motorola Inc. Sense line charging system for random access memory
US4340943A (en) * 1979-05-31 1982-07-20 Tokyo Shibaura Denki Kabushiki Kaisha Memory device utilizing MOS FETs
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
NL8005756A (nl) * 1980-10-20 1982-05-17 Philips Nv Inrichting voor het opwekken van een reeks binair gewogen waarden van een elektrische grootheid.
US4556961A (en) * 1981-05-26 1985-12-03 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory with delay means to reduce peak currents
JPS63144488A (ja) * 1986-12-06 1988-06-16 Fujitsu Ltd 半導体記憶装置
US4868903A (en) * 1988-04-15 1989-09-19 General Electric Company Safe logic zero and one supply for CMOS integrated circuits
JP4459257B2 (ja) * 2007-06-27 2010-04-28 株式会社東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343130A (en) * 1964-08-27 1967-09-19 Fabri Tek Inc Selection matrix line capacitance recharge system
US3275996A (en) * 1965-12-30 1966-09-27 Rca Corp Driver-sense circuit arrangement
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3599180A (en) * 1968-11-29 1971-08-10 Gen Instrument Corp Random access read-write memory system having data refreshing capabilities and memory cell therefor

Also Published As

Publication number Publication date
FR2106593A1 (OSRAM) 1972-05-05
US3638039A (en) 1972-01-25
NL7107967A (OSRAM) 1972-03-21
GB1338959A (en) 1973-11-28
US3688264A (en) 1972-08-29

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