DE2126303A1 - Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung - Google Patents

Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung

Info

Publication number
DE2126303A1
DE2126303A1 DE19712126303 DE2126303A DE2126303A1 DE 2126303 A1 DE2126303 A1 DE 2126303A1 DE 19712126303 DE19712126303 DE 19712126303 DE 2126303 A DE2126303 A DE 2126303A DE 2126303 A1 DE2126303 A1 DE 2126303A1
Authority
DE
Germany
Prior art keywords
drain
gate electrode
field effect
effect transistor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712126303
Other languages
German (de)
English (en)
Inventor
John Aaron Somerville N.J. Olmstead (V.StA.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2126303A1 publication Critical patent/DE2126303A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19712126303 1970-06-01 1971-05-27 Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung Pending DE2126303A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4186770A 1970-06-01 1970-06-01

Publications (1)

Publication Number Publication Date
DE2126303A1 true DE2126303A1 (de) 1971-12-16

Family

ID=21918769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712126303 Pending DE2126303A1 (de) 1970-06-01 1971-05-27 Eine isolierte Gate-Elektrode aufweisender Feldeffekt-Transistor mit veränderlicher Verstärkung

Country Status (7)

Country Link
US (1) US3745426A (enExample)
JP (1) JPS5040988B1 (enExample)
BE (1) BE767882A (enExample)
DE (1) DE2126303A1 (enExample)
FR (1) FR2093941B1 (enExample)
GB (1) GB1327298A (enExample)
NL (1) NL7107401A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376845B (de) * 1974-09-20 1985-01-10 Siemens Ag Speicher-feldeffekttransistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513433B2 (enExample) * 1974-08-29 1980-04-09
GB1527773A (en) * 1974-10-18 1978-10-11 Matsushita Electric Industrial Co Ltd Mos type semiconductor device
US4112455A (en) * 1977-01-27 1978-09-05 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor with extended linear logarithmic transconductance
NL8303834A (nl) * 1983-11-08 1985-06-03 Philips Nv Halfgeleiderinrichting.
US6164781A (en) * 1998-11-13 2000-12-26 Alliedsignal Inc. High temperature transistor with reduced risk of electromigration and differently shaped electrodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1195314A (en) * 1968-05-07 1970-06-17 Marconi Co Ltd Improvements in or relating to Semi-Conductor Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376845B (de) * 1974-09-20 1985-01-10 Siemens Ag Speicher-feldeffekttransistor

Also Published As

Publication number Publication date
NL7107401A (enExample) 1971-12-03
GB1327298A (en) 1973-08-22
JPS5040988B1 (enExample) 1975-12-27
FR2093941B1 (enExample) 1976-05-28
BE767882A (fr) 1971-10-18
FR2093941A1 (enExample) 1972-02-04
US3745426A (en) 1973-07-10

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