JPS5040988B1 - - Google Patents

Info

Publication number
JPS5040988B1
JPS5040988B1 JP46036667A JP3666771A JPS5040988B1 JP S5040988 B1 JPS5040988 B1 JP S5040988B1 JP 46036667 A JP46036667 A JP 46036667A JP 3666771 A JP3666771 A JP 3666771A JP S5040988 B1 JPS5040988 B1 JP S5040988B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46036667A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040988B1 publication Critical patent/JPS5040988B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
JP46036667A 1970-06-01 1971-05-27 Pending JPS5040988B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4186770A 1970-06-01 1970-06-01

Publications (1)

Publication Number Publication Date
JPS5040988B1 true JPS5040988B1 (ja) 1975-12-27

Family

ID=21918769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46036667A Pending JPS5040988B1 (ja) 1970-06-01 1971-05-27

Country Status (7)

Country Link
US (1) US3745426A (ja)
JP (1) JPS5040988B1 (ja)
BE (1) BE767882A (ja)
DE (1) DE2126303A1 (ja)
FR (1) FR2093941B1 (ja)
GB (1) GB1327298A (ja)
NL (1) NL7107401A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513433B2 (ja) * 1974-08-29 1980-04-09
AT376845B (de) * 1974-09-20 1985-01-10 Siemens Ag Speicher-feldeffekttransistor
GB1527773A (en) * 1974-10-18 1978-10-11 Matsushita Electric Industrial Co Ltd Mos type semiconductor device
US4112455A (en) * 1977-01-27 1978-09-05 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor with extended linear logarithmic transconductance
NL8303834A (nl) * 1983-11-08 1985-06-03 Philips Nv Halfgeleiderinrichting.
US6164781A (en) * 1998-11-13 2000-12-26 Alliedsignal Inc. High temperature transistor with reduced risk of electromigration and differently shaped electrodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1195314A (en) * 1968-05-07 1970-06-17 Marconi Co Ltd Improvements in or relating to Semi-Conductor Devices

Also Published As

Publication number Publication date
NL7107401A (ja) 1971-12-03
DE2126303A1 (de) 1971-12-16
GB1327298A (en) 1973-08-22
FR2093941B1 (ja) 1976-05-28
BE767882A (fr) 1971-10-18
FR2093941A1 (ja) 1972-02-04
US3745426A (en) 1973-07-10

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