DE2125472A1 - Magnetdrahtspeicher - Google Patents

Magnetdrahtspeicher

Info

Publication number
DE2125472A1
DE2125472A1 DE19712125472 DE2125472A DE2125472A1 DE 2125472 A1 DE2125472 A1 DE 2125472A1 DE 19712125472 DE19712125472 DE 19712125472 DE 2125472 A DE2125472 A DE 2125472A DE 2125472 A1 DE2125472 A1 DE 2125472A1
Authority
DE
Germany
Prior art keywords
voltage
switch
generator
distributed capacitances
control input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712125472
Other languages
German (de)
English (en)
Inventor
James D Clearwater FIa Allen (V St A)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE2125472A1 publication Critical patent/DE2125472A1/de
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
DE19712125472 1970-06-03 1971-05-22 Magnetdrahtspeicher Pending DE2125472A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4294870A 1970-06-03 1970-06-03

Publications (1)

Publication Number Publication Date
DE2125472A1 true DE2125472A1 (de) 1971-12-16

Family

ID=21924614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712125472 Pending DE2125472A1 (de) 1970-06-03 1971-05-22 Magnetdrahtspeicher

Country Status (7)

Country Link
US (1) US3617775A (OSRAM)
CA (1) CA941501A (OSRAM)
DE (1) DE2125472A1 (OSRAM)
FR (1) FR2093996B1 (OSRAM)
GB (1) GB1357801A (OSRAM)
NL (1) NL7107412A (OSRAM)
SE (1) SE362158B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281400A (en) * 1979-12-28 1981-07-28 Rca Corporation Circuit for reducing the loading effect of an insulated-gate field-effect transistor (IGFET) on a signal source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2993198A (en) * 1958-11-28 1961-07-18 Burroughs Corp Bidirectional current drive circuit
US3025411A (en) * 1960-05-23 1962-03-13 Rca Corp Drive circuit for a computer memory
US3205481A (en) * 1962-12-03 1965-09-07 Bell Telephone Labor Inc Matrix selection circuit with bias means for nonselected circuits in one set of matrix coordinate drive circuits
US3479521A (en) * 1966-03-25 1969-11-18 Bell Telephone Labor Inc Current driver organization
US3523197A (en) * 1968-04-18 1970-08-04 Rca Corp Current pulse driver apparatus employing non-saturating transistor switching techniques and having low-power drain during non-pulse periods
US3546484A (en) * 1969-09-26 1970-12-08 Motorola Inc Two-state switchover amplifier system with plural current sources

Also Published As

Publication number Publication date
FR2093996A1 (OSRAM) 1972-02-04
NL7107412A (OSRAM) 1971-12-07
US3617775A (en) 1971-11-02
SE362158B (OSRAM) 1973-11-26
FR2093996B1 (OSRAM) 1975-04-18
GB1357801A (en) 1974-06-26
CA941501A (en) 1974-02-05

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