DE212014000009U1 - Einrichtung zur Siliziumkristallherstellung - Google Patents

Einrichtung zur Siliziumkristallherstellung Download PDF

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Publication number
DE212014000009U1
DE212014000009U1 DE201421000009 DE212014000009U DE212014000009U1 DE 212014000009 U1 DE212014000009 U1 DE 212014000009U1 DE 201421000009 DE201421000009 DE 201421000009 DE 212014000009 U DE212014000009 U DE 212014000009U DE 212014000009 U1 DE212014000009 U1 DE 212014000009U1
Authority
DE
Germany
Prior art keywords
insulating
edge
inclined surface
panel
heating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE201421000009
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German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Graftech International Holdings Inc
Original Assignee
Graftech International Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Graftech International Holdings Inc filed Critical Graftech International Holdings Inc
Publication of DE212014000009U1 publication Critical patent/DE212014000009U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
DE201421000009 2013-07-15 2014-06-18 Einrichtung zur Siliziumkristallherstellung Expired - Lifetime DE212014000009U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361846295P 2013-07-15 2013-07-15
US61/846,295 2013-07-15
PCT/US2014/042908 WO2015009389A1 (en) 2013-07-15 2014-06-18 Device for silicon crystal production

Publications (1)

Publication Number Publication Date
DE212014000009U1 true DE212014000009U1 (de) 2015-03-05

Family

ID=52346622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201421000009 Expired - Lifetime DE212014000009U1 (de) 2013-07-15 2014-06-18 Einrichtung zur Siliziumkristallherstellung

Country Status (5)

Country Link
KR (1) KR20160000956U (ko)
CN (1) CN204803437U (ko)
DE (1) DE212014000009U1 (ko)
TW (1) TWM500980U (ko)
WO (1) WO2015009389A1 (ko)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB244426A (en) * 1924-12-15 1927-01-28 Siemens Schuckertwerke Gmbh Improvements in or relating to electric furnaces
US4256530A (en) * 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
CN202030862U (zh) * 2011-03-10 2011-11-09 无锡开日能源科技股份有限公司 一种多晶硅铸锭炉的三段式热场
WO2012170124A2 (en) * 2011-06-06 2012-12-13 Gtat Corporation Heater assembly for crystal growth apparatus
CN203893222U (zh) * 2011-06-24 2014-10-22 格拉弗技术国际控股有限公司 炉具隔热组件

Also Published As

Publication number Publication date
KR20160000956U (ko) 2016-03-23
TWM500980U (zh) 2015-05-11
WO2015009389A1 (en) 2015-01-22
CN204803437U (zh) 2015-11-25

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20150430

R156 Lapse of ip right after 3 years