DE2119945A1 - Fotoelektrische Halbleitereinrichtung - Google Patents

Fotoelektrische Halbleitereinrichtung

Info

Publication number
DE2119945A1
DE2119945A1 DE19712119945 DE2119945A DE2119945A1 DE 2119945 A1 DE2119945 A1 DE 2119945A1 DE 19712119945 DE19712119945 DE 19712119945 DE 2119945 A DE2119945 A DE 2119945A DE 2119945 A1 DE2119945 A1 DE 2119945A1
Authority
DE
Germany
Prior art keywords
radiation
measured
diffusion areas
alloy
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712119945
Other languages
German (de)
English (en)
Inventor
Myrsyl W.; Stelzer Ernest L.; Minnetonka Minn. Scott (V.StA.). HOIj 31-50
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE2119945A1 publication Critical patent/DE2119945A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
DE19712119945 1970-06-29 1971-04-23 Fotoelektrische Halbleitereinrichtung Pending DE2119945A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5048470A 1970-06-29 1970-06-29
US33139973A 1973-02-12 1973-02-12

Publications (1)

Publication Number Publication Date
DE2119945A1 true DE2119945A1 (de) 1972-01-13

Family

ID=74625758

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712119945 Pending DE2119945A1 (de) 1970-06-29 1971-04-23 Fotoelektrische Halbleitereinrichtung

Country Status (5)

Country Link
US (2) US3638026A (enExample)
JP (1) JPS471231A (enExample)
DE (1) DE2119945A1 (enExample)
FR (1) FR2096539A1 (enExample)
GB (1) GB1290637A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4896872U (enExample) * 1972-02-22 1973-11-16
JPS5634110B2 (enExample) * 1973-02-16 1981-08-07
US4060822A (en) 1973-06-27 1977-11-29 Siemens Aktiengesellschaft Strip type radiation detector and method of making same
JPS5068328A (enExample) * 1973-10-19 1975-06-07
US3949223A (en) * 1973-11-01 1976-04-06 Honeywell Inc. Monolithic photoconductive detector array
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response
JPS523478A (en) * 1975-06-26 1977-01-11 Yokogawa Hokushin Electric Corp Radiation detecting device
JPS5339097A (en) * 1976-09-22 1978-04-10 Nec Corp Photo detector
US4169738A (en) * 1976-11-24 1979-10-02 Antonio Luque Double-sided solar cell with self-refrigerating concentrator
JPS5746616Y2 (enExample) * 1978-05-25 1982-10-14
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
JPS56157076A (en) * 1980-05-09 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Receiving device for multi-wavelengh light
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
GB2136202B (en) * 1983-03-02 1987-01-14 Int Standard Electric Corp Photodiode
JPS60154125A (ja) * 1984-01-24 1985-08-13 Matsushita Electric Ind Co Ltd 赤外線検出器
US4887138A (en) 1988-03-23 1989-12-12 The United States Of America As Represented By The Secetary Of The Air Force P-I-N photodetector having a burried junction
GB2228824A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors
US6548878B1 (en) 1998-02-05 2003-04-15 Integration Associates, Inc. Method for producing a thin distributed photodiode structure
US6198118B1 (en) * 1998-03-09 2001-03-06 Integration Associates, Inc. Distributed photodiode structure
US6753586B1 (en) 1998-03-09 2004-06-22 Integration Associates Inc. Distributed photodiode structure having majority dopant gradient and method for making same
CA2716361A1 (en) 2008-02-28 2009-09-03 New Millennium Solar Equipment Corp. Insulating glass unit with integrated mini-junction device
US9683933B2 (en) * 2012-10-30 2017-06-20 The Board Of Regents Of The University Of Oklahoma Method and apparatus for detecting an analyte
US9470579B2 (en) 2014-09-08 2016-10-18 SlantRange, Inc. System and method for calibrating imaging measurements taken from aerial vehicles
US10217188B2 (en) 2014-11-12 2019-02-26 SlantRange, Inc. Systems and methods for aggregating and facilitating the display of spatially variable geographic data acquired by airborne vehicles
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965867A (en) * 1959-01-02 1960-12-20 Clairex Corp Photosensitive element
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3413507A (en) * 1966-11-01 1968-11-26 Matsushita Electric Industrial Co Ltd Injection el diode
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region

Also Published As

Publication number Publication date
US3638026A (en) 1972-01-25
JPS471231A (enExample) 1972-01-21
FR2096539A1 (enExample) 1972-02-18
USRE28032E (en) 1974-06-04
GB1290637A (enExample) 1972-09-27

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