DE2116713B2 - Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung - Google Patents

Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung

Info

Publication number
DE2116713B2
DE2116713B2 DE2116713A DE2116713A DE2116713B2 DE 2116713 B2 DE2116713 B2 DE 2116713B2 DE 2116713 A DE2116713 A DE 2116713A DE 2116713 A DE2116713 A DE 2116713A DE 2116713 B2 DE2116713 B2 DE 2116713B2
Authority
DE
Germany
Prior art keywords
exposure
light
exposing
plane
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2116713A
Other languages
German (de)
English (en)
Other versions
DE2116713A1 (de
Inventor
Albert Frosch
Arno Dr. Schmackpfeffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE2116713A priority Critical patent/DE2116713B2/de
Priority to US00225224A priority patent/US3776633A/en
Priority to GB1223072A priority patent/GB1362139A/en
Priority to FR7209914A priority patent/FR2132043B1/fr
Priority to CA138,890A priority patent/CA981961A/en
Publication of DE2116713A1 publication Critical patent/DE2116713A1/de
Publication of DE2116713B2 publication Critical patent/DE2116713B2/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/58—Optics for apodization or superresolution; Optical synthetic aperture systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE2116713A 1971-04-06 1971-04-06 Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung Ceased DE2116713B2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE2116713A DE2116713B2 (de) 1971-04-06 1971-04-06 Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung
US00225224A US3776633A (en) 1971-04-06 1972-02-10 Method of exposure for ghost line suppression
GB1223072A GB1362139A (en) 1971-04-06 1972-03-16 Methods and apparatus for exposing photosensitive layers
FR7209914A FR2132043B1 (enExample) 1971-04-06 1972-03-16
CA138,890A CA981961A (en) 1971-04-06 1972-04-05 Method of exposure for ghost line suppression

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2116713A DE2116713B2 (de) 1971-04-06 1971-04-06 Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung

Publications (2)

Publication Number Publication Date
DE2116713A1 DE2116713A1 (de) 1972-12-14
DE2116713B2 true DE2116713B2 (de) 1974-03-28

Family

ID=5804001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2116713A Ceased DE2116713B2 (de) 1971-04-06 1971-04-06 Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung

Country Status (5)

Country Link
US (1) US3776633A (enExample)
CA (1) CA981961A (enExample)
DE (1) DE2116713B2 (enExample)
FR (1) FR2132043B1 (enExample)
GB (1) GB1362139A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612011B2 (enExample) * 1973-01-16 1981-03-18
US4023904A (en) * 1974-07-01 1977-05-17 Tamarack Scientific Co. Inc. Optical microcircuit printing process
US3936173A (en) * 1974-10-04 1976-02-03 Xerox Corporation Optical system
FR2356975A1 (fr) * 1976-06-30 1978-01-27 Ibm Procede d'impression photolithographique du type a contact permettant d'obtenir des profils a resolution elevee et appareil utilisant un tel procede
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
FR2465241A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
FR2465255B1 (fr) * 1979-09-10 1987-02-20 Roumiguieres Jean Louis Procede pour reporter sur un support l'ombre fidele d'un masque perce de fentes distribuees periodiquement, et application de ce procede notamment en photolithogravure
US4536240A (en) * 1981-12-02 1985-08-20 Advanced Semiconductor Products, Inc. Method of forming thin optical membranes
US4459011A (en) * 1983-02-15 1984-07-10 Eastman Kodak Company Compact screen projector
CA1270934A (en) * 1985-03-20 1990-06-26 Masataka Shirasaki Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings
US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
US5638211A (en) 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
DE69132120T2 (de) * 1990-11-15 2000-09-21 Nikon Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Projektionsbelichtung
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6710855B2 (en) * 1990-11-15 2004-03-23 Nikon Corporation Projection exposure apparatus and method
US6885433B2 (en) * 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US5719704A (en) 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
US6967710B2 (en) 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
US6128068A (en) * 1991-02-22 2000-10-03 Canon Kabushiki Kaisha Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
KR100379873B1 (ko) * 1995-07-11 2003-08-21 우시오덴키 가부시키가이샤 막질개량방법
JPH1022222A (ja) * 1995-12-29 1998-01-23 Hyundai Electron Ind Co Ltd 露光装置
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6466304B1 (en) * 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
TW587199B (en) 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
US20100003605A1 (en) * 2008-07-07 2010-01-07 International Business Machines Corporation system and method for projection lithography with immersed image-aligned diffractive element
US11036145B2 (en) 2018-12-21 2021-06-15 Applied Materials, Inc. Large area self imaging lithography based on broadband light source

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582208A (en) * 1967-06-01 1971-06-01 Lester E Idler Method and means for producing multidensity tint screens
US3559549A (en) * 1968-01-22 1971-02-02 Perfect Film & Chem Corp Rechargeable flash attachment
US3584948A (en) * 1968-06-24 1971-06-15 Bell Telephone Labor Inc Apparatus and method for producing multiple images
US3601018A (en) * 1968-08-26 1971-08-24 Zenith Radio Corp Method and apparatus for exposing curved substrates
US3615449A (en) * 1969-09-25 1971-10-26 Rca Corp Method of generating high area-density periodic arrays by diffraction imaging

Also Published As

Publication number Publication date
DE2116713A1 (de) 1972-12-14
CA981961A (en) 1976-01-20
FR2132043B1 (enExample) 1974-09-13
FR2132043A1 (enExample) 1972-11-17
US3776633A (en) 1973-12-04
GB1362139A (en) 1974-07-30

Similar Documents

Publication Publication Date Title
DE2116713B2 (de) Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung
DE69231412T2 (de) Belichtungsverfahren mit Phasenverschiebung
DE60030024T2 (de) Lithographisches Verfahren zur Herstellung von Bauelementen mit Dunkelfeld-Beleuchtung und Gerät dafür
DE3785636T2 (de) Beleuchtungsapparat für Belichtung.
DE2900921C2 (de) Verfahren zum Projektionskopieren von Masken auf ein Werkstück
DE4430253C2 (de) Verkleinerndes Musterprojektionsgerät mit einem Raumfilter
DE2439987A1 (de) Verfahren zum ausrichten von objekten durch elektrooptische vorrichtungen
DE69126456T2 (de) Belichtungsgerät
DE2047316C3 (de) Verfahren zur Herstellung einer Speicherelektrode und Einrichtung zur Durchführung des Verfahrens
DE10225423A1 (de) Fotomaske zur Fokusüberwachung, Verfahren zur Fokusüberwachung, Einheit zur Fokusüberwachung und Herstellungsverfahren für eine derartige Einheit
DE1963578A1 (de) Verfahren zum kontaktlosen Belichten
DE2547079C3 (de) Verfahren zur Korpuskularbestrahlung eines Präparats
DE4422038C2 (de) Zum Herstellen von Halbleiterbauelementen verwendete Diffraktionsmaske
DE69613432T2 (de) Belichtungsapparat und Belichtungsverfahren unter Verwendung desselben
DE69115999T2 (de) Verfahren zur Herstellung eines Maskenmusters
DE2211476B2 (de) Verfahren zur Ausrichtung von zur Deckung zu bringenden Bildern in einer Projektions-Belichtungseinrichtung, insbesondere zur Fertigung integrierter Schaltungen
DE2948646A1 (de) Automatisch arbeitende vorrichtung zum ausrichten einer photomaske
DE2253492A1 (de) Projektionsverfahren zum erzeugen einer kopie einer photomaske
DE1572868B2 (de) Vorrichtung zur vervielfachten Abbildung eines Musterbilds
DE2018725A1 (de) Verfahren und Vorrichtung zur Herstel-IHBf Hugn§sMtirc-r§rr8o"!; Culver City, Calif. (V.St.A.)
DE10301475B4 (de) Verfahren zum Belichten eines Substrates mit einem Strukturmuster
DE102023202896A1 (de) Verfahren und System zum Bestrahlen eines Lithografieobjekts
DE102004016704B4 (de) Verfahren zur Reduktion des Rastermaßes auf einer Halbleiterscheibe
DE4303028C2 (de) Projektionsbelichtungsgerät
EP0297161A1 (de) Projektionsbelichtungssystem

Legal Events

Date Code Title Description
BHV Refusal