CA981961A - Method of exposure for ghost line suppression - Google Patents

Method of exposure for ghost line suppression

Info

Publication number
CA981961A
CA981961A CA138,890A CA138890A CA981961A CA 981961 A CA981961 A CA 981961A CA 138890 A CA138890 A CA 138890A CA 981961 A CA981961 A CA 981961A
Authority
CA
Canada
Prior art keywords
exposure
ghost line
line suppression
suppression
ghost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA138,890A
Other languages
English (en)
Other versions
CA138890S (en
Inventor
Arno Schmackpfeffer
Albert Frosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA981961A publication Critical patent/CA981961A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/58—Optics for apodization or superresolution; Optical synthetic aperture systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CA138,890A 1971-04-06 1972-04-05 Method of exposure for ghost line suppression Expired CA981961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2116713A DE2116713B2 (de) 1971-04-06 1971-04-06 Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung

Publications (1)

Publication Number Publication Date
CA981961A true CA981961A (en) 1976-01-20

Family

ID=5804001

Family Applications (1)

Application Number Title Priority Date Filing Date
CA138,890A Expired CA981961A (en) 1971-04-06 1972-04-05 Method of exposure for ghost line suppression

Country Status (5)

Country Link
US (1) US3776633A (enExample)
CA (1) CA981961A (enExample)
DE (1) DE2116713B2 (enExample)
FR (1) FR2132043B1 (enExample)
GB (1) GB1362139A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612011B2 (enExample) * 1973-01-16 1981-03-18
US4023904A (en) * 1974-07-01 1977-05-17 Tamarack Scientific Co. Inc. Optical microcircuit printing process
US3936173A (en) * 1974-10-04 1976-02-03 Xerox Corporation Optical system
FR2356975A1 (fr) * 1976-06-30 1978-01-27 Ibm Procede d'impression photolithographique du type a contact permettant d'obtenir des profils a resolution elevee et appareil utilisant un tel procede
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
FR2465241A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
FR2465255B1 (fr) * 1979-09-10 1987-02-20 Roumiguieres Jean Louis Procede pour reporter sur un support l'ombre fidele d'un masque perce de fentes distribuees periodiquement, et application de ce procede notamment en photolithogravure
US4536240A (en) * 1981-12-02 1985-08-20 Advanced Semiconductor Products, Inc. Method of forming thin optical membranes
US4459011A (en) * 1983-02-15 1984-07-10 Eastman Kodak Company Compact screen projector
CA1270934A (en) * 1985-03-20 1990-06-26 Masataka Shirasaki Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings
US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
US5638211A (en) 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
DE69132120T2 (de) * 1990-11-15 2000-09-21 Nikon Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Projektionsbelichtung
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6710855B2 (en) * 1990-11-15 2004-03-23 Nikon Corporation Projection exposure apparatus and method
US6885433B2 (en) * 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US5719704A (en) 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
US6967710B2 (en) 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
US6128068A (en) * 1991-02-22 2000-10-03 Canon Kabushiki Kaisha Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
KR100379873B1 (ko) * 1995-07-11 2003-08-21 우시오덴키 가부시키가이샤 막질개량방법
JPH1022222A (ja) * 1995-12-29 1998-01-23 Hyundai Electron Ind Co Ltd 露光装置
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6466304B1 (en) * 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
TW587199B (en) 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
US20100003605A1 (en) * 2008-07-07 2010-01-07 International Business Machines Corporation system and method for projection lithography with immersed image-aligned diffractive element
US11036145B2 (en) 2018-12-21 2021-06-15 Applied Materials, Inc. Large area self imaging lithography based on broadband light source

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582208A (en) * 1967-06-01 1971-06-01 Lester E Idler Method and means for producing multidensity tint screens
US3559549A (en) * 1968-01-22 1971-02-02 Perfect Film & Chem Corp Rechargeable flash attachment
US3584948A (en) * 1968-06-24 1971-06-15 Bell Telephone Labor Inc Apparatus and method for producing multiple images
US3601018A (en) * 1968-08-26 1971-08-24 Zenith Radio Corp Method and apparatus for exposing curved substrates
US3615449A (en) * 1969-09-25 1971-10-26 Rca Corp Method of generating high area-density periodic arrays by diffraction imaging

Also Published As

Publication number Publication date
DE2116713A1 (de) 1972-12-14
FR2132043B1 (enExample) 1974-09-13
FR2132043A1 (enExample) 1972-11-17
DE2116713B2 (de) 1974-03-28
US3776633A (en) 1973-12-04
GB1362139A (en) 1974-07-30

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