DE69219929T2 - Herstellung von submikrometrischen Anordnungen - Google Patents

Herstellung von submikrometrischen Anordnungen

Info

Publication number
DE69219929T2
DE69219929T2 DE69219929T DE69219929T DE69219929T2 DE 69219929 T2 DE69219929 T2 DE 69219929T2 DE 69219929 T DE69219929 T DE 69219929T DE 69219929 T DE69219929 T DE 69219929T DE 69219929 T2 DE69219929 T2 DE 69219929T2
Authority
DE
Germany
Prior art keywords
submicrometric
arrays
manufacture
submicrometric arrays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219929T
Other languages
English (en)
Other versions
DE69219929D1 (de
Inventor
Donald Lawrence White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69219929D1 publication Critical patent/DE69219929D1/de
Application granted granted Critical
Publication of DE69219929T2 publication Critical patent/DE69219929T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69219929T 1991-03-22 1992-03-13 Herstellung von submikrometrischen Anordnungen Expired - Fee Related DE69219929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/673,614 US5229255A (en) 1991-03-22 1991-03-22 Sub-micron device fabrication with a phase shift mask having multiple values of phase delay

Publications (2)

Publication Number Publication Date
DE69219929D1 DE69219929D1 (de) 1997-07-03
DE69219929T2 true DE69219929T2 (de) 1997-09-11

Family

ID=24703390

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219929T Expired - Fee Related DE69219929T2 (de) 1991-03-22 1992-03-13 Herstellung von submikrometrischen Anordnungen

Country Status (7)

Country Link
US (1) US5229255A (de)
EP (1) EP0505102B1 (de)
JP (1) JPH0580493A (de)
KR (1) KR100273072B1 (de)
CA (1) CA2061624C (de)
DE (1) DE69219929T2 (de)
HK (1) HK1000542A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367588A (en) * 1992-10-29 1994-11-22 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Communications Method of fabricating Bragg gratings using a silica glass phase grating mask and mask used by same
JPH0534897A (ja) * 1991-07-30 1993-02-12 Fujitsu Ltd 光学マスク及びその製造方法
US5633102A (en) * 1991-08-23 1997-05-27 Intel Corporation Lithography using a new phase-shifting reticle
JP3194155B2 (ja) * 1992-01-31 2001-07-30 キヤノン株式会社 半導体デバイスの製造方法及びそれを用いた投影露光装置
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
JP2781322B2 (ja) * 1992-04-27 1998-07-30 三菱電機株式会社 ホトマスクの製造方法
JPH0611826A (ja) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp フォトマスク及びその製造方法
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5348826A (en) * 1992-08-21 1994-09-20 Intel Corporation Reticle with structurally identical inverted phase-shifted features
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
KR960015788B1 (ko) * 1993-06-15 1996-11-21 엘지반도체 주식회사 위상반전 마스크의 제조방법
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
US5827622A (en) * 1995-11-02 1998-10-27 International Business Machines Corporation Reflective lithographic mask
US5942355A (en) * 1996-09-04 1999-08-24 Micron Technology, Inc. Method of fabricating a phase-shifting semiconductor photomask
US5851704A (en) * 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US5840448A (en) * 1996-12-31 1998-11-24 Intel Corporation Phase shifting mask having a phase shift that minimizes critical dimension sensitivity to manufacturing and process variance
US5914372A (en) * 1997-01-23 1999-06-22 Jsr Corporation Ethylene copolymer rubber composition
US6114071A (en) * 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
AU3063799A (en) 1998-03-17 1999-10-11 Asml Masktools Netherlands B.V. Method of patterning sub-0.25 lambda line features with high transmission, "attenuated" phase shift masks
JP4465794B2 (ja) 1999-04-23 2010-05-19 Ｊｓｒ株式会社 オレフィン重合用触媒及びそれを用いたオレフィン重合体の製造方法
DE19957542C2 (de) * 1999-11-30 2002-01-10 Infineon Technologies Ag Alternierende Phasenmaske
WO2001061412A1 (en) * 2000-02-14 2001-08-23 Asml Masktools B.V. A method of improving photomask geometry
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
US6335130B1 (en) 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
EP1164432A1 (de) 2000-06-13 2001-12-19 ASML Masktools Netherlands B.V. Naheffektkorrektur mit Hilfsmustern variabler Dimensionen
WO2001098838A2 (en) * 2000-06-22 2001-12-27 Koninklijke Philips Electronics N.V. Method of forming optical images, mask for use in this method, method of manufacturing a device using this method, and apparatus for carrying out this method
DE60219544T2 (de) * 2001-02-27 2008-01-03 Asml Netherlands B.V. Methode zur Naheffekt-Korrektur mit teilweise strahlungsdurchlässigen, nicht aufgelösten Hilfsstrukturen
TW571571B (en) 2001-03-14 2004-01-11 Asml Masktools Bv An optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
SG116600A1 (en) * 2004-04-09 2005-11-28 Asml Masktools Bv Optical proximity correction using chamfers and rounding at corners.
JP4914272B2 (ja) * 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1270934A (en) * 1985-03-20 1990-06-26 Masataka Shirasaki Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
EP0395425B1 (de) * 1989-04-28 1996-10-16 Fujitsu Limited Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske

Also Published As

Publication number Publication date
CA2061624C (en) 1999-02-02
EP0505102B1 (de) 1997-05-28
KR920018869A (ko) 1992-10-22
HK1000542A1 (en) 1998-04-03
DE69219929D1 (de) 1997-07-03
CA2061624A1 (en) 1992-09-23
JPH0580493A (ja) 1993-04-02
US5229255A (en) 1993-07-20
KR100273072B1 (ko) 2000-12-01
EP0505102A1 (de) 1992-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee