DE2108235A1 - Halbleiter Elektronenemitter - Google Patents
Halbleiter ElektronenemitterInfo
- Publication number
- DE2108235A1 DE2108235A1 DE19712108235 DE2108235A DE2108235A1 DE 2108235 A1 DE2108235 A1 DE 2108235A1 DE 19712108235 DE19712108235 DE 19712108235 DE 2108235 A DE2108235 A DE 2108235A DE 2108235 A1 DE2108235 A1 DE 2108235A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- area
- semiconductor material
- electron emitter
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 239000000463 material Substances 0.000 claims description 52
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000031700 light absorption Effects 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 239000003607 modifier Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Led Devices (AREA)
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1398070A | 1970-02-25 | 1970-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2108235A1 true DE2108235A1 (de) | 1971-09-09 |
Family
ID=21762848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712108235 Pending DE2108235A1 (de) | 1970-02-25 | 1971-02-20 | Halbleiter Elektronenemitter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3667007A (enExample) |
| JP (1) | JPS4830178B1 (enExample) |
| DE (1) | DE2108235A1 (enExample) |
| FR (1) | FR2078942A5 (enExample) |
| GB (1) | GB1347752A (enExample) |
| NL (1) | NL7102462A (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2175571B1 (enExample) * | 1972-03-14 | 1978-08-25 | Radiotechnique Compelec | |
| US3727115A (en) * | 1972-03-24 | 1973-04-10 | Ibm | Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous |
| JPS5310840B2 (enExample) * | 1972-05-04 | 1978-04-17 | ||
| US3814996A (en) * | 1972-06-27 | 1974-06-04 | Us Air Force | Photocathodes |
| US3814993A (en) * | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
| DE2261757A1 (de) * | 1972-12-16 | 1974-06-20 | Philips Patentverwaltung | Semitransparente photokathode |
| JPS5430274B2 (enExample) * | 1973-06-28 | 1979-09-29 | ||
| US3877052A (en) * | 1973-12-26 | 1975-04-08 | Bell Telephone Labor Inc | Light-emitting semiconductor apparatus for optical fibers |
| US3964388A (en) * | 1974-03-04 | 1976-06-22 | The Carter's Ink Company | Method and apparatus for high speed non-impact printing with shade-of-grey control |
| US4023062A (en) * | 1975-09-25 | 1977-05-10 | Rca Corporation | Low beam divergence light emitting diode |
| US4000503A (en) * | 1976-01-02 | 1976-12-28 | International Audio Visual, Inc. | Cold cathode for infrared image tube |
| US4040080A (en) * | 1976-03-22 | 1977-08-02 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor cold electron emission device |
| US4040079A (en) * | 1976-03-22 | 1977-08-02 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor cold electron emission device |
| US4040074A (en) * | 1976-03-22 | 1977-08-02 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor cold electron emission device |
| US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
| NL8602330A (nl) * | 1986-09-15 | 1988-04-05 | Philips Nv | Werkwijze voor het contacteren van halfgeleiderkathoden, alsmede voor het vervaardigen van een electronenbuis voorzien van een dergelijke kathode. |
| DE4123525A1 (de) * | 1991-07-16 | 1993-01-21 | Basf Ag | Substituierte pyrimidinderivate und ihre verwendung zur bekaempfung unerwuenschten pflanzenwuchses |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL147572B (nl) * | 1964-12-02 | 1975-10-15 | Philips Nv | Elektrische ontladingsbuis met een fotokathode. |
| US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
| US3529200A (en) * | 1968-03-28 | 1970-09-15 | Gen Electric | Light-emitting phosphor-diode combination |
-
1970
- 1970-02-25 US US13980A patent/US3667007A/en not_active Expired - Lifetime
- 1970-12-17 JP JP11496170A patent/JPS4830178B1/ja active Pending
-
1971
- 1971-02-20 DE DE19712108235 patent/DE2108235A1/de active Pending
- 1971-02-23 FR FR7106059A patent/FR2078942A5/fr not_active Expired
- 1971-02-24 NL NL7102462A patent/NL7102462A/xx unknown
- 1971-04-19 GB GB2208771A patent/GB1347752A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3667007A (en) | 1972-05-30 |
| JPS4830178B1 (enExample) | 1973-09-18 |
| GB1347752A (en) | 1974-02-27 |
| FR2078942A5 (enExample) | 1971-11-05 |
| NL7102462A (enExample) | 1971-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |