DE2062333A1 - Halbleitervorrichtung mit einer Mehr fachelektrode, insbesondere Mehrfach emitter Leistungstransistor - Google Patents
Halbleitervorrichtung mit einer Mehr fachelektrode, insbesondere Mehrfach emitter LeistungstransistorInfo
- Publication number
- DE2062333A1 DE2062333A1 DE19702062333 DE2062333A DE2062333A1 DE 2062333 A1 DE2062333 A1 DE 2062333A1 DE 19702062333 DE19702062333 DE 19702062333 DE 2062333 A DE2062333 A DE 2062333A DE 2062333 A1 DE2062333 A1 DE 2062333A1
- Authority
- DE
- Germany
- Prior art keywords
- resistance
- areas
- area
- contact
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 230000008859 change Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003412 degenerative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88593169A | 1969-12-17 | 1969-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2062333A1 true DE2062333A1 (de) | 1971-09-30 |
Family
ID=25388015
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19707046690U Expired DE7046690U (de) | 1969-12-17 | 1970-12-17 | Halbleitervorrichtung mit einer mehrfachelektrode insbesondere mehrfachemitter-leistungstransistor |
| DE19702062333 Pending DE2062333A1 (de) | 1969-12-17 | 1970-12-17 | Halbleitervorrichtung mit einer Mehr fachelektrode, insbesondere Mehrfach emitter Leistungstransistor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19707046690U Expired DE7046690U (de) | 1969-12-17 | 1970-12-17 | Halbleitervorrichtung mit einer mehrfachelektrode insbesondere mehrfachemitter-leistungstransistor |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE760335A (enrdf_load_stackoverflow) |
| DE (2) | DE7046690U (enrdf_load_stackoverflow) |
| FR (1) | FR2186735A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1280948A (enrdf_load_stackoverflow) |
| NL (1) | NL7018217A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2251727A1 (de) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps |
| FR2482369A1 (fr) * | 1980-05-09 | 1981-11-13 | Philips Nv | Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur |
| EP0662719A1 (en) * | 1993-12-27 | 1995-07-12 | Harris Corporation | An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
-
1970
- 1970-12-02 GB GB57286/70A patent/GB1280948A/en not_active Expired
- 1970-12-09 FR FR7044402A patent/FR2186735A1/fr not_active Withdrawn
- 1970-12-14 NL NL7018217A patent/NL7018217A/xx unknown
- 1970-12-15 BE BE760335A patent/BE760335A/xx unknown
- 1970-12-17 DE DE19707046690U patent/DE7046690U/de not_active Expired
- 1970-12-17 DE DE19702062333 patent/DE2062333A1/de active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2251727A1 (de) * | 1972-10-21 | 1974-04-25 | Licentia Gmbh | Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps |
| FR2482369A1 (fr) * | 1980-05-09 | 1981-11-13 | Philips Nv | Dispositif a transistor bipolaire comportant des sous-transistors munis chacun d'une resistance serie d'emetteur |
| EP0662719A1 (en) * | 1993-12-27 | 1995-07-12 | Harris Corporation | An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1280948A (en) | 1972-07-12 |
| FR2186735A1 (enrdf_load_stackoverflow) | 1974-01-11 |
| DE7046690U (de) | 1971-04-29 |
| BE760335A (fr) | 1971-06-15 |
| NL7018217A (enrdf_load_stackoverflow) | 1971-06-21 |
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