DE2061420A1 - Verfahren zur Messung der Ladungs trager Konzentration in einem Halbleiter material - Google Patents

Verfahren zur Messung der Ladungs trager Konzentration in einem Halbleiter material

Info

Publication number
DE2061420A1
DE2061420A1 DE19702061420 DE2061420A DE2061420A1 DE 2061420 A1 DE2061420 A1 DE 2061420A1 DE 19702061420 DE19702061420 DE 19702061420 DE 2061420 A DE2061420 A DE 2061420A DE 2061420 A1 DE2061420 A1 DE 2061420A1
Authority
DE
Germany
Prior art keywords
light
angle
carrier concentration
reflectivity
incidence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702061420
Other languages
German (de)
English (en)
Inventor
Edward Eugene Shelburne Vt Keenan William Andrew Poughkeepsie Schumann jun Paul August Wappingers Falls N Y Gardner, (V St A ) GOIr 35 02
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2061420A1 publication Critical patent/DE2061420A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE19702061420 1969-12-15 1970-12-14 Verfahren zur Messung der Ladungs trager Konzentration in einem Halbleiter material Pending DE2061420A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88500269A 1969-12-15 1969-12-15

Publications (1)

Publication Number Publication Date
DE2061420A1 true DE2061420A1 (de) 1971-06-24

Family

ID=25385915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702061420 Pending DE2061420A1 (de) 1969-12-15 1970-12-14 Verfahren zur Messung der Ladungs trager Konzentration in einem Halbleiter material

Country Status (6)

Country Link
US (1) US3623818A (enExample)
JP (1) JPS4926743B1 (enExample)
CA (1) CA924927A (enExample)
DE (1) DE2061420A1 (enExample)
FR (1) FR2071789A5 (enExample)
GB (1) GB1306850A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2436236A1 (de) * 1973-07-27 1975-02-06 Hitachi Ltd Verfahren und anordnung zur messung der halbleiterladungstraeger-lebensdauer

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015127A (en) * 1975-10-30 1977-03-29 Aluminum Company Of America Monitoring film parameters using polarimetry of optical radiation
US4218143A (en) * 1979-01-22 1980-08-19 The United States Of America As Represented By The Secretary Of The Navy Lattice matching measurement device
JPS57132039A (en) * 1981-02-09 1982-08-16 Hitachi Ltd Method for measuring carrier distribution
EP0091500B1 (de) * 1982-04-10 1986-07-02 DR.-ING. RUDOLF HELL GmbH Verfahren und Vorrichtung zur Dichtemessung von Farbschichten noch feuchter Druckfarbe
US4646009A (en) * 1982-05-18 1987-02-24 Ade Corporation Contacts for conductivity-type sensors
JPS63126255U (enExample) * 1987-02-09 1988-08-17
JP2582363B2 (ja) * 1987-03-19 1997-02-19 株式会社リコー 多色現像装置の画像濃度検出機構
US5007741A (en) * 1989-09-25 1991-04-16 At&T Bell Laboratories Methods and apparatus for detecting impurities in semiconductors
EP0469572B1 (en) * 1990-07-31 1998-09-23 Toshiba Ceramics Co., Ltd. A method measuring interstitial oxygen concentration
DE4211741B4 (de) * 1991-04-05 2006-09-21 Hahn-Meitner-Institut Berlin Gmbh Spektroskopische Untersuchungsmethode für einen Stoff im Energiebereich geringer Absorption
DE19537807C1 (de) * 1995-10-11 1997-02-06 Roland Man Druckmasch Verfahren zum Feststellen von Schichten
US5966019A (en) * 1996-04-24 1999-10-12 Boxer Cross, Inc. System and method for measuring properties of a semiconductor substrate in a fabrication line
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2436236A1 (de) * 1973-07-27 1975-02-06 Hitachi Ltd Verfahren und anordnung zur messung der halbleiterladungstraeger-lebensdauer

Also Published As

Publication number Publication date
US3623818A (en) 1971-11-30
FR2071789A5 (enExample) 1971-09-17
JPS4926743B1 (enExample) 1974-07-11
CA924927A (en) 1973-04-24
GB1306850A (en) 1973-02-14

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