DE2021923B2 - Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode - Google Patents
Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrodeInfo
- Publication number
- DE2021923B2 DE2021923B2 DE19702021923 DE2021923A DE2021923B2 DE 2021923 B2 DE2021923 B2 DE 2021923B2 DE 19702021923 DE19702021923 DE 19702021923 DE 2021923 A DE2021923 A DE 2021923A DE 2021923 B2 DE2021923 B2 DE 2021923B2
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- layer
- metal layer
- metal
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 86
- 238000005530 etching Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229940035289 tobi Drugs 0.000 description 1
- NLVFBUXFDBBNBW-PBSUHMDJSA-N tobramycin Chemical compound N[C@@H]1C[C@H](O)[C@@H](CN)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O[C@@H]2[C@@H]([C@@H](N)[C@H](O)[C@@H](CO)O2)O)[C@H](N)C[C@@H]1N NLVFBUXFDBBNBW-PBSUHMDJSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702021923 DE2021923B2 (de) | 1970-05-05 | 1970-05-05 | Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode |
| FR707047393A FR2088334B3 (OSRAM) | 1970-05-05 | 1970-12-30 | |
| US00120917A US3818582A (en) | 1970-05-05 | 1971-03-04 | Methods of producing field effect transistors having insulated control electrodes |
| NL7106079A NL7106079A (OSRAM) | 1970-05-05 | 1971-05-04 | |
| GB1324271*[A GB1338042A (en) | 1970-05-05 | 1971-05-05 | Method for the production of a field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702021923 DE2021923B2 (de) | 1970-05-05 | 1970-05-05 | Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2021923A1 DE2021923A1 (de) | 1971-11-18 |
| DE2021923B2 true DE2021923B2 (de) | 1976-07-22 |
Family
ID=5770281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702021923 Granted DE2021923B2 (de) | 1970-05-05 | 1970-05-05 | Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3818582A (OSRAM) |
| DE (1) | DE2021923B2 (OSRAM) |
| FR (1) | FR2088334B3 (OSRAM) |
| GB (1) | GB1338042A (OSRAM) |
| NL (1) | NL7106079A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321989B2 (OSRAM) * | 1973-10-12 | 1978-07-06 | ||
| US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
| US20070013070A1 (en) * | 2005-06-23 | 2007-01-18 | Liang Mong S | Semiconductor devices and methods of manufacture thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| GB1209914A (en) * | 1967-03-29 | 1970-10-21 | Marconi Co Ltd | Improvements in or relating to semi-conductor devices |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US3566518A (en) * | 1967-10-13 | 1971-03-02 | Gen Electric | Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films |
| US3514844A (en) * | 1967-12-26 | 1970-06-02 | Hughes Aircraft Co | Method of making field-effect device with insulated gate |
| US3625647A (en) * | 1968-03-25 | 1971-12-07 | Dow Chemical Co | Method of preparing calcium-nickel phosphate catalyst |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
-
1970
- 1970-05-05 DE DE19702021923 patent/DE2021923B2/de active Granted
- 1970-12-30 FR FR707047393A patent/FR2088334B3/fr not_active Expired
-
1971
- 1971-03-04 US US00120917A patent/US3818582A/en not_active Expired - Lifetime
- 1971-05-04 NL NL7106079A patent/NL7106079A/xx unknown
- 1971-05-05 GB GB1324271*[A patent/GB1338042A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2088334A7 (OSRAM) | 1972-01-07 |
| US3818582A (en) | 1974-06-25 |
| FR2088334B3 (OSRAM) | 1973-08-10 |
| NL7106079A (OSRAM) | 1971-11-09 |
| GB1338042A (en) | 1973-11-21 |
| DE2021923A1 (de) | 1971-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EF | Willingness to grant licences | ||
| 8339 | Ceased/non-payment of the annual fee |