DE202005015973U1 - Optoelektronischer Sensor - Google Patents

Optoelektronischer Sensor Download PDF

Info

Publication number
DE202005015973U1
DE202005015973U1 DE200520015973 DE202005015973U DE202005015973U1 DE 202005015973 U1 DE202005015973 U1 DE 202005015973U1 DE 200520015973 DE200520015973 DE 200520015973 DE 202005015973 U DE202005015973 U DE 202005015973U DE 202005015973 U1 DE202005015973 U1 DE 202005015973U1
Authority
DE
Germany
Prior art keywords
zones
optoelectronic sensor
control
semiconductor substrate
control zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE200520015973
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IC Haus GmbH
Original Assignee
IC Haus GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IC Haus GmbH filed Critical IC Haus GmbH
Priority to DE200520015973 priority Critical patent/DE202005015973U1/de
Priority to EP06806040A priority patent/EP1934637A2/fr
Priority to PCT/EP2006/009609 priority patent/WO2007042191A2/fr
Publication of DE202005015973U1 publication Critical patent/DE202005015973U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Measurement Of Optical Distance (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE200520015973 2005-10-10 2005-10-10 Optoelektronischer Sensor Expired - Lifetime DE202005015973U1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE200520015973 DE202005015973U1 (de) 2005-10-10 2005-10-10 Optoelektronischer Sensor
EP06806040A EP1934637A2 (fr) 2005-10-10 2006-10-04 Capteur optoelectronique
PCT/EP2006/009609 WO2007042191A2 (fr) 2005-10-10 2006-10-04 Capteur optoélectronique comprenant un substrat semi-conducteur à zone photosensible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200520015973 DE202005015973U1 (de) 2005-10-10 2005-10-10 Optoelektronischer Sensor

Publications (1)

Publication Number Publication Date
DE202005015973U1 true DE202005015973U1 (de) 2007-02-15

Family

ID=37776133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200520015973 Expired - Lifetime DE202005015973U1 (de) 2005-10-10 2005-10-10 Optoelektronischer Sensor

Country Status (3)

Country Link
EP (1) EP1934637A2 (fr)
DE (1) DE202005015973U1 (fr)
WO (1) WO2007042191A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor
DE2740955A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Optoelektronischer sensor
DE2813254B1 (de) * 1978-03-28 1979-04-26 Siemens Ag Eindimensionaler CCD-Sensor mit UEberlaufvorrichtung
DE2842648A1 (de) * 1978-09-29 1980-05-08 Siemens Ag Optoelektronische sensorzelle
DE3425243A1 (de) * 1984-07-09 1986-02-06 VEB Werk für Fernsehelektronik im VEB Kombinat Mikroelektronik, DDR 1160 Berlin Ladungsgekoppelte lineare halbleitersensoranordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821974B4 (de) * 1998-05-18 2008-04-10 Schwarte, Rudolf, Prof. Dr.-Ing. Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen
US8129813B2 (en) * 2003-09-18 2012-03-06 Ic-Haus Gmbh Optoelectronic sensor and device for 3D distance measurement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor
DE2740955A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Optoelektronischer sensor
DE2813254B1 (de) * 1978-03-28 1979-04-26 Siemens Ag Eindimensionaler CCD-Sensor mit UEberlaufvorrichtung
DE2842648A1 (de) * 1978-09-29 1980-05-08 Siemens Ag Optoelektronische sensorzelle
DE3425243A1 (de) * 1984-07-09 1986-02-06 VEB Werk für Fernsehelektronik im VEB Kombinat Mikroelektronik, DDR 1160 Berlin Ladungsgekoppelte lineare halbleitersensoranordnung

Also Published As

Publication number Publication date
EP1934637A2 (fr) 2008-06-25
WO2007042191A2 (fr) 2007-04-19
WO2007042191A3 (fr) 2007-11-22

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Legal Events

Date Code Title Description
R163 Identified publications notified
R207 Utility model specification

Effective date: 20070322

R150 Term of protection extended to 6 years

Effective date: 20081114

R157 Lapse of ip right after 6 years

Effective date: 20120501