WO2007042191A2 - Capteur optoélectronique comprenant un substrat semi-conducteur à zone photosensible - Google Patents

Capteur optoélectronique comprenant un substrat semi-conducteur à zone photosensible Download PDF

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Publication number
WO2007042191A2
WO2007042191A2 PCT/EP2006/009609 EP2006009609W WO2007042191A2 WO 2007042191 A2 WO2007042191 A2 WO 2007042191A2 EP 2006009609 W EP2006009609 W EP 2006009609W WO 2007042191 A2 WO2007042191 A2 WO 2007042191A2
Authority
WO
WIPO (PCT)
Prior art keywords
zones
optoelectronic sensor
control
semiconductor substrate
control zone
Prior art date
Application number
PCT/EP2006/009609
Other languages
German (de)
English (en)
Other versions
WO2007042191A3 (fr
Inventor
Manfred Herz
Original Assignee
Ic-Haus Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ic-Haus Gmbh filed Critical Ic-Haus Gmbh
Priority to EP06806040A priority Critical patent/EP1934637A2/fr
Publication of WO2007042191A2 publication Critical patent/WO2007042191A2/fr
Publication of WO2007042191A3 publication Critical patent/WO2007042191A3/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Definitions

  • the invention relates to an optoelectronic sensor, in particular for use in a reflection light scanner, and to a device for detecting an object within an adjustable monitoring range in which such an optoelectronic sensor is used.
  • Optoelectronic sensors are used, for example, in the case of light barriers, reflection light barriers and reflection light sensors.
  • Diffuse reflection sensors are well known and serve to detect objects within a surveillance area and, if necessary, to measure its distance to a reflection light scanner.
  • the reflection light scanner has a light source with which a monitoring area is illuminated.
  • An object entering the surveillance area reflects the light bundle coming from the light source which impinges on an optoelectronic sensor via a lens system.
  • Such optoelectronic sensors which function as spatially resolving light sensors, are known. The reflected light is converted by the sensor into a corresponding electrical signal and a
  • Evaluation device supplied, which can detect in response to the electrical signal, whether an object has entered the monitoring range of the reflection light scanner. If the distance between the light source and the sensor known, the evaluation can under Application of the known triangulation also determine the distance of the object to the sensor.
  • a multi-element light sensor for example, has eight rectilinearly arranged adjacent sensor elements.
  • the sensor elements are designed as photodiodes.
  • Each sensor element is associated with one or more switches through which the sensor elements can be read in a controlled manner.
  • Another optoelectronic sensor is from the
  • the optoelectronic sensor has a plurality of light receivers arranged spatially next to each other, wherein all light receivers are connected to a common potential and adjacent light receivers are connected to each other via an electronic switch. Photodiodes are provided as light receivers.
  • the invention has for its object to provide a novel optoelectronic sensor.
  • An essential core idea of the invention is to provide an optoelectronic sensor, preferably for a reflection light scanner, to provide instead of a plurality of spatially juxtaposed, switchable photodiodes controllable drift fields in one
  • the drift fields ensure that minority carriers, which penetrate a
  • Light beam are generated in the semiconductor substrate, be supplied in a predeterminable collection zones.
  • the charge carriers accumulating in the collecting zones can then be read out and evaluated via a control and evaluation unit.
  • the optoelectronic sensor contains at least one semiconductor substrate, which has at least one light-sensitive area, at least two collecting zones and a controllable device for generating at least two differently oriented drift fields, wherein in operation the drift fields run at least partially between the collecting zones.
  • the drift field generator has control zones arranged in groups to produce differently oriented drift fields.
  • the collection zones which are each grouped into a group, are assigned in sections to the collection zones.
  • the control zones of each group may be associated with at least two separate collection zones.
  • the term control zone group is understood to mean a group which, in addition to control zones, also contains at least the associated collection zones or collection zone sections.
  • control zones are arranged in pairs relative to one another. Subsequently, such arranged control zones are also called control zone pairs.
  • control zones and the semiconductor substrate are of the same doping type, while the collecting zones are doped inversely to the semiconductor substrate.
  • a p-doped material forms the semiconductor substrate.
  • control zone groups may be electrically isolated from each other, for example by an oxide. This is particularly useful when the control zone groups are located in a common semiconductor substrate.
  • the semiconductor substrate is constructed on a dielectric, wherein the oxide isolation separating the groups is produced in a manner known per se in the semiconductor substrate.
  • control zone groups can be achieved by arranging them in separate semiconductor substrates. Each control zone group thus forms a single chip.
  • a controllable switching device can be assigned to the control zones, which can apply an electrical potential to each control zone, such that at least two differently oriented drift fields be generated.
  • the switching device may be arranged in the semiconductor substrate or outside.
  • the switching device can also be part of the control zone groups.
  • drift fields are meant, for example, electric fields whose field lines run parallel, but with different directions to each other, and can also be drift fields whose field lines are not parallel to each other.
  • control voltages it is possible to apply control voltages to the respective control zone pairs, such that the concentration center of gravity of a light bundle incident on the semiconductor substrate can be determined.
  • controllable switching device assigns each control zone to at least two switching elements, via which different electrical potentials can be applied to the respective control zone.
  • the switching elements can be designed as electronic switches.
  • Control zones arranged in rows and parallel to each other. In this way, there is a line-by-line guidance of the minority carriers, which are generated by a light beam incident on the semiconductor substrate. As a result of the different orientation of the drift fields and their spatial arrangement in the semiconductor substrate, the minority carriers strike at different points of the collecting zones, which are preferably arranged between the control zones forming the control zone pairs.
  • a device for detecting an object within an adjustable surveillance area comprises an optoelectronic sensor according to one of claims 1 to 6, at least one light source, at least two
  • Power supply devices that provide different output voltages, as well as a connected to the collection zones control and evaluation.
  • a device can be used for example as a reflection light scanner.
  • FIG. 1 shows an exemplary reflection light scanner with an optoelectronic sensor according to the invention
  • FIG. 2 shows a cross section through the optoelectronic sensor shown in FIG. 1.
  • Fig. 1 shows a generally designated 10 detection device which can be used as a reflection light scanner.
  • the detection device 10 comprises an optoelectronic sensor 30 shown by a dashed line.
  • the optoelectronic sensor 30 has an example p-doped semiconductor substrate 35.
  • four control zones 40, 41, 42 and 43 can be introduced in an edge area of the semiconductor substrate 35 and four further control zones, designated 70, 71, 72 and 73, in an opposite edge area.
  • the opposing control zones 40 and 70, 41 and 71, 42 and 72 and 43 and 73 are each a related Control zone pair.
  • the control zone pairs serve to generate the drift fields required for the functioning of the optoelectronic sensor 30.
  • the control zones are p-doped in the present example as the semiconductor substrate 35.
  • FIG. 2 shows a cross section of the optoelectronic sensor 30, which passes through the control zones 40 to 43.
  • FIG. 2 shows the semiconductor substrate 35 mounted on a dielectric 140 and the control zones 40 to 43 located in the semiconductor substrate 35 and oxide isolation barriers generally designated 130.
  • control zones and collecting zones a one-dimensional detection of an object can take place within the monitoring area.
  • Conceivable are any Arrangements of control zones and collection zones, with which a multi-dimensional detection of an object within the surveillance area is possible.
  • each control zone can be connected to, for example, two electronic switches.
  • the switches 90, 92, 94, 96, 81, 83, 85 and 87 are connected to a terminal 122 to which a DC voltage source 100 is connected, which provides a first DC voltage Ui.
  • the switches 91, 93, 95, 97, 80, 82, 84 and 86 are connected to a terminal 120, to which a second DC voltage source 105 is connected, which supplies a second DC voltage U 2 .
  • the present example the
  • DC voltage source 100 has a higher voltage than the DC voltage source 105th
  • the detection device 10 includes a Light source 110, with which a "area to be monitored is illuminated.
  • Detection device 10 and in particular the operation of the optoelectronic sensor 30 described.
  • the control and evaluation unit 20 can apply an algorithm based on the triangulation principle known per se.
  • the triangulation method is essentially based on the fact that the distance between the light source 110 and the optoelectronic sensor 30, which is predetermined by the geometry, and the angle between the light beam of the light source 110 and the light beam reflected at the object whose distance is to be measured by means of the optoelectronic sensor 30 and the control and Ausnceeinrichtzung 20 is determined. From this, the distance of the object to the sensor 30 can be calculated.
  • the collimated light emitted by the light source 110 is reflected on the object and impinges on the lens system via an unillustrated lens system optoelectronic sensor 30 on. If there are drift fields between the collection zones 50 and 60, minority carriers, which are generated when the light beam penetrates into the semiconductor substrate 35, are driven to the collection zones. In a p-doped semiconductor substrate, electrons form the minority carriers.
  • the angle to be measured between the light emitted by the light source 110 and the light incident on the optoelectronic sensor 30 reflected light beam can be determined based on the switch positions of the control and evaluation device 20. For example, the angle can be determined by evaluating the switch positions at which the same number of minority carriers arrive due to the drift fields generated at the collecting zones 50 and 60, ie
  • the control and evaluation unit 20 has the switches currently controlled such that the switches 80, 82, 85, 87, 90, 92, 95, 97 are closed, while the remaining switches are open.
  • two drift fields are generated, which are line by line and in the opposite direction.
  • the control zone pairs formed by the control zones 40 and 70 and 41 and 71 produce a drift field whose field lines are from right to left, while the control zone pairs formed by the control zones 42 and 72 and 43 and 73 produce a drift field whose Field lines run from left to right.
  • the control and evaluation device 20 has read out the collection zones 50 and 60 and determined that the same number of minority carriers have accumulated on both collection zones.
  • the control and Ausonneeinirchtung 20 Based on the set switch positions, the control and Ausonneeinirchtung 20 the Concentration centroid of the reflected light beam and thus determine the angle between the light emitted by the light source 110 and the light reflected at an object light.
  • the focus of concentration is in the middle of the
  • control and evaluation unit 20 Since the control and evaluation unit 20 also knows the distance between the light source 110 and the optoelectronic sensor 30, now the distance of the object, which has reflected the light coming from the light source 110, be calculated to this light source 110.
  • control and evaluation unit 20 is designed such that it uses a search algorithm to determine the
  • Switch positions can change until the difference of the collected on the collecting zones 50 and 60 minority carrier is equal to zero or exceeds a threshold or below.
  • the distance measurement can also take place in that the potentials applied to the control zones are set in such a way that the difference between the minority charge carriers collected on the collecting zones 50 and 60 is equal to zero or exceeds or falls below a threshold value.
  • the distance can also be determined by a
  • Switch position is specified, and the charge difference is evaluated in the collection zones.
  • control zone pairs are only an example. Instead of two parallel drift fields and three or more parallel drift fields can be generated by appropriately arranged control zones whose direction is alternating.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Measurement Of Optical Distance (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un nouveau type de capteur optoélectronique. Le capteur (30) selon l'invention comprend, notamment pour sa mise en oeuvre dans un détecteur photosensible à réflexion, au moins un substrat semi-conducteur (35) qui présente au moins une zone photosensible, au moins deux zones collectrices (50, 60), ainsi qu'un dispositif (40-43, 70-73) à commande électrique servant à générer au moins deux champs de migration orientés différemment. En fonctionnement, les champs de migration passent au moins partiellement entre les zones collectrices (50, 60).
PCT/EP2006/009609 2005-10-10 2006-10-04 Capteur optoélectronique comprenant un substrat semi-conducteur à zone photosensible WO2007042191A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06806040A EP1934637A2 (fr) 2005-10-10 2006-10-04 Capteur optoelectronique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202005015973.5 2005-10-10
DE200520015973 DE202005015973U1 (de) 2005-10-10 2005-10-10 Optoelektronischer Sensor

Publications (2)

Publication Number Publication Date
WO2007042191A2 true WO2007042191A2 (fr) 2007-04-19
WO2007042191A3 WO2007042191A3 (fr) 2007-11-22

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PCT/EP2006/009609 WO2007042191A2 (fr) 2005-10-10 2006-10-04 Capteur optoélectronique comprenant un substrat semi-conducteur à zone photosensible

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EP (1) EP1934637A2 (fr)
DE (1) DE202005015973U1 (fr)
WO (1) WO2007042191A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821974A1 (de) * 1998-05-18 1999-11-25 Rudolf Schwarte Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen
WO2005036647A1 (fr) * 2003-09-18 2005-04-21 Ic-Haus Gmbh Detecteur optoelectronique et dispositif de mesure de distance en 3d

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740955A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Optoelektronischer sensor
DE2740996A1 (de) * 1977-09-12 1979-03-22 Siemens Ag Sensorzelle fuer einen optoelektronischen sensor
DE2813254C2 (de) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Eindimensionaler CCD-Sensor mit Überlaufvorrichtung
DE2842648A1 (de) * 1978-09-29 1980-05-08 Siemens Ag Optoelektronische sensorzelle
DE3425243A1 (de) * 1984-07-09 1986-02-06 VEB Werk für Fernsehelektronik im VEB Kombinat Mikroelektronik, DDR 1160 Berlin Ladungsgekoppelte lineare halbleitersensoranordnung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821974A1 (de) * 1998-05-18 1999-11-25 Rudolf Schwarte Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen
WO2005036647A1 (fr) * 2003-09-18 2005-04-21 Ic-Haus Gmbh Detecteur optoelectronique et dispositif de mesure de distance en 3d

Also Published As

Publication number Publication date
DE202005015973U1 (de) 2007-02-15
WO2007042191A3 (fr) 2007-11-22
EP1934637A2 (fr) 2008-06-25

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