WO2016128436A1 - Détecteur et système lidar - Google Patents

Détecteur et système lidar Download PDF

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Publication number
WO2016128436A1
WO2016128436A1 PCT/EP2016/052785 EP2016052785W WO2016128436A1 WO 2016128436 A1 WO2016128436 A1 WO 2016128436A1 EP 2016052785 W EP2016052785 W EP 2016052785W WO 2016128436 A1 WO2016128436 A1 WO 2016128436A1
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WO
WIPO (PCT)
Prior art keywords
pixels
detector
row
radiation
contours
Prior art date
Application number
PCT/EP2016/052785
Other languages
German (de)
English (en)
Inventor
Tim Boescke
Hubert Halbritter
Martin Haushalter
Markus Arzberger
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112016000684.5T priority Critical patent/DE112016000684A5/de
Publication of WO2016128436A1 publication Critical patent/WO2016128436A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier

Definitions

  • the present invention relates to a detector for a ligament system and a lidar system.
  • a lidar system for distance measurement of objects.
  • a lidar system for distance measurement of objects.
  • Such a system comprises an emitter for emitting a pulsed infrared radiation, a detector for detecting radiation and an evaluation device for signal processing.
  • the radiation pulses emitted by the emitter can be reflected at an obstacle in front of the vehicle and, after passing through an optical system arranged upstream of the detector, be detected by the detector. From the duration of the radiation, the distance of the obstacle to the vehicle can be determined (time-of-flight measurement).
  • the reflected radiation is detected by means of a pixelated photodiode detector (photodiode array).
  • the detector has radiation- ⁇ -sensitive pixels with rectangular outlines, which are arranged in series next to one another egg ner. Between the pixels are due to their design radiation-insensitive intermediate areas. This serves to reduce crosstalk Zvi ⁇ rule the pixels. Radiation reflected at an obstacle, which only reaches an intermediate area, may therefore not be perceived. This represents a major risk in the safety-relevant lidar system.
  • the detector can be preceded by a modified optical system, with the aid of which the incident radiation can be directed, for example defocused, at the detector or concentrated on the individual pixels. This is associated with disadvantages such as a blurred image and increased costs.
  • the object of the present invention is to provide an improved solution for a detector and for a lidar system.
  • a detector for a lidar system (light detection and ranging) is proposed.
  • the detector has a series of radiation-sensitive pixels arranged side by side.
  • the pixels of the row have such contours that opposite sides of adjacent pixels are at least partially deviated from a perpendicular direction to an extending direction of the row.
  • the detector has a series arrangement of separate radiation-sensitive pixels for radiation detection. Between the pixels of the detector may be insensitive to radiation and radiation-insensitive intermediate areas aufwei ⁇ sen.
  • the contours or geometric shapes of the pips deviate from a rectangular shape.
  • the pixels are formed such that opposite sides of Benach ⁇ disclosed pixels each at least partly deviating from a perpendicular lateral direction to an extending direction of the row, in other words, at least partly non-perpendicular to the extending direction of row pixels ⁇ , run.
  • These features relate to an on ⁇ considerate contemplation of the pixels of the detector.
  • Such a geometric interpretation of pixels offers the Mög ⁇ friendliness, despite the separate pixels or in spite of the pixel separating radiation-insensitive intermediate areas a presence of dead regions in which no Strahlungser--making can be done to avoid the direction of extension of the series. Therefore, the direction of extension a continuous radiation detection over all Pi ⁇ xel the pixel row is possible. This advantage can be verwirkli ⁇ chen no extra cost. For this purpose, only the detector is formed with the above-given geometric design of the pixels.
  • the detector can be arranged such that the pixel row is oriented in the horizontal direction, and thus the extension direction of the row is parallel to the horizontal direction.
  • the opposite sides of adjacent pixels may at least partially not be perpendicular to the horizontal direction, and therefore, continuous radiation detection may be provided with respect to the horizontal direction.
  • continuous radiation detection may be provided with respect to the horizontal direction.
  • obstacles are, for example, humans, trees, pillars, columns, etc.
  • the pixels may be provided in the region of a front side of the detector.
  • the detector In operation of the associated lidar system, the detector may face the front of the radiation to be detected.
  • the opposing sides of adjacent pixels may correspond to each other or at least partially parallel to each other.
  • the radiation-insensitive intermediate regions present between the pixels can have a line-shaped or strip-shaped supervisory form.
  • the intermediate regions may further extend, at least partially deviating from a perpendicular direction to the extension direction of the pixel row, corresponding to the opposite sides of the adjacent pixels.
  • the pixels can have lateral dimensions in the range of several hundred or even other, for example larger dimensions.
  • the intermediate areas may have a width in the range of several 10 microns or even another, for example, a smaller width.
  • the detector has a front shield.
  • the shield has a plurality of apertures associated with the pixels.
  • the contours of the pixels can be predetermined over the contours of the openings of the shield.
  • the radiation-insensitive intermediate areas between the pixels can be defined or formed via the shielding.
  • the shield may comprise a metallic material.
  • the opposite sides of adjacent pixels of the row are step-shaped.
  • the sides can extend in sections perpendicular to the direction of extension of the row and between such sections, for example obliquely thereto, or in the direction of extension of the row.
  • the opposite sides of adjacent pixels of the series are zigzagged. mig.
  • the sides may have portions which extend obliquely to the direction perpendicular to the direction of extension, and thus also obliquely to the direction of extension of the row.
  • a zigzag shape an embodiment is possible in which all the pixels in the row, including the two pixels at the two ends of the row arrangement, have substantially identical dimensions or area dimensions.
  • the pixels comprise at least partially curved extending Kon ⁇ structures. In this way, an occurrence of an increased electric field strength can be suppressed.
  • adjacent pixels of the row extend on opposite sides at least to locations that have respective coincident heights relative to the direction of extent of the row.
  • the term "height" refers to the He ⁇ stretch direction of the row of pixels related position.
  • the opposite sides of the separated from each other by the radiation-insensitive intermediate areas pixels with reference to the Leasere ⁇ ckungscardi the series can each be present in part at the same positions or end at the same positions. It is also possible that adjacent pixels do not only extend to locations having the same height in the direction of extent, or in other words, that adjacent pixels do not only extend to matching positions with respect to the direction of extent of the row, but respectively extend beyond that.
  • adjacent pixels of the row each extend in overlapping areas along the extension direction of the row side by side.
  • radiation can be detected collectively via the adjacent pixels separated by the radiation-insensitive intermediate areas.
  • continuous radiation detection along the direction of extension of the row can be made possible with high reliability.
  • the aforesaid embodiment can be realized, for example, by having the pixels of the row have interlocking contours. For example, a step-shaped one is possible
  • the opposite sides of adjacent pixels can have a step-shaped profile as explained above.
  • Another example is zigzag meshing, which can be accomplished by using the above-discussed zig-zag pattern from opposite sides of adjacent pixels.
  • Intersections of adjacent pixels may alternatively be realized by such an embodiment, according to which the opposite sides of adjacent pixels are for example rectilinear.
  • the detector is a pixellated photodiode detector.
  • the detector may be a monolithic semiconductor device, and realized in the form of a semiconductor chip.
  • a sol ⁇ ches component can also be called a photodiode array or Detek- torarray.
  • the detector may comprise a semiconductor layer in which a plurality of adjacent arranged photodiodes are formed.
  • Each pixel of the De ⁇ tektors may be associated with a corresponding photodiode, or each pixel of the detector may have a corresponding photo ⁇ diode.
  • the semiconductor layer of the photodiode detector may have a layer region with a first, for example n-type, doping, and for each of the photodiodes a thin front-side layer region with a second doping inverse to the first doping, ie, for example, a p-type doping.
  • each photodiode of the photodiode array formed in the semiconductor layer can have a corresponding pn junction.
  • the photodiode detector may further include an antireflection layer on the front side. Another possible component is the above-mentioned screen with recesses or openings, via which the views of the radiation-sensitive pixels of the detector, and thus the opposite sides of adjacent pixels as well as the intermediate areas, can be fixed.
  • the shield may be disposed on the antireflection layer.
  • the front side For ⁇ term layer regions of the photodiodes to the second (for example, p-type) doping can have lateral dimensions which match the dimensions of the openings of the shield.
  • the photodiode detector may have front side contacts arranged in the region of the pixels, which may extend through the antireflection layer to the front layer regions of the photodiodes with the second doping.
  • the other substrate region with the first doping of the Photodiode detector for example, have a flat back contact.
  • the detector can only have a row of juxtaposed separate pixels. Such an embodiment may also be referred to as an ld arrangement or ld array. However, it is also possible embodiments with several, for example, two parallel rows of juxtaposed separate pixels, which can also be referred to as 2d array or 2d array.
  • the detector has a further parallel offset row of radiation-sensitive pixels arranged side by side.
  • the pixels of the further row have such contours that opposite sides of adjacent pixels extend at least partially deviating from a perpendicular direction to an extension direction of the further row.
  • This configuration makes it possible that with respect to the other row of pixels, a continuous Strah ⁇ development tracking the direction of extension can be achieved.
  • the detector can likewise be insensitive to radiation or have radiation-insensitive intermediate regions defined by a shield.
  • the pixels of two different rows may also be separated from one another by radiation-insensitive intermediate regions or by a contiguous radiation-insensitive intermediate region defined by a shield of the detector.
  • the pixels may have such contours that opposite sides of adjacent pixels of the different rows are straight and extend in the extending direction of the rows.
  • opposite sides of adjacent pixels of the different rows at least partially deviating from the direction of extension of the rows.
  • a lidar system comprises a detector having the structure described above or having a structure according to one or more of the embodiments described above.
  • Another component of the lidar system is a Emit ⁇ ter for emitting a radiation.
  • Emit ⁇ ter may emit a pulsed light radiation. Part of the radiation can be reflected on an object or obstacle and detected spatially resolved with the aid of the detector. In this case, the detector can generate electrical signals as a function of the reflected radiation impinging on the detector or the pixels.
  • the detector may be arranged such that the (at least one) pixel row is aligned in the horizontal direction.
  • the opposed sides of adjacent pixels can (with multiple rows of pixels in the respective rows) at least partially deviating from a perpendicular direction to the horizontal direction pass, and is therefore related to the horizontal direction, a lu ⁇ ckenlose radiation detection possible. This means that columnar obstacles with a low horizonta ⁇ len expansion based on the reflected radiation can be reliably detected with the aid of the detector.
  • the emitter may be configured to emit infrared radiation.
  • the emitter may for example comprise an infrared emitting laser diode or light emitting diode (IRED).
  • the lidar system may include other components besides the detector and the emitter.
  • the detector may be preceded by an optical system.
  • the system can be a Evaluation device comprise which detector signals of the detector can be transmitted. Based on this, the evaluation device can determine the transit time of the reflected radiation and thus a distance of an obstacle.
  • Figure 1 is a schematic representation of a lidar system
  • FIG. 2 is a perspective view of a detector having a row of juxtaposed pixels and front-side contacts in the form of contact pads, with opposite sides of adjacent pixels being stepped;
  • Figure 4 is a cross-sectional view of a section of a detector
  • FIG. 5 shows a top view of another detector with a row of juxtaposed pixels, opposite sides of adjacent pixels being zigzag-shaped;
  • FIG. 7 shows an overview of another detector with two rows of pixels arranged next to one another
  • FIG. 8 shows a top view of a further detector with a row of juxtaposed pixels and front-side contacts, the contacts having a flat and a linear contact section;
  • Figure 9 is an elevational view of another detector having pixels arranged side by side in a row with opposite sides of adjacent pixels extending obliquely to the direction of extension of the row of pixels;
  • Figure 10 is a plan view of a further detector with adjacent pixels in a series, with adjacent pixels extend to job related to the Leasere ⁇ ckungscardi the pixel row of the same height; and Figure 11 shows the local sensitivity of the pixels of the detector of Figure 10 along the direction of extension of the pixel row.
  • a detector 100 which can be used in a lidar system 200 (light detection and ranging) for radiation detection.
  • the detector 100 is a pixelated photodiode.
  • Detector 100 also referred to as a photodiode array or detector array, which (at least) has a series of juxtaposed radiation-sensitive pixels 110.
  • the detector 100 is designed such that, despite the pixelated structure, objects with a small horizontal extent can be detected reliably.
  • the pixel 110 of the series to an appropriate layout with such contours that viewed from above opposite Be ⁇ th of adjacent pixels 110 at least partially in deviation from a perpendicular direction 151 to a Leasere- ckungsraum 150 of the pixel row extend.
  • detector 100 and lidar system 200 are merely of a schematic nature and are not to scale. In this sense, components and structures shown in the figures may be exaggerated or oversized for clarity. Likewise, it is possible for detector 100 and lidar system 200 to include other components and structures in addition to components and structures shown and described.
  • the lidar system 200 comes in a non Darge ⁇ presented motor vehicle used in order to be able to grasp the vehicle he ⁇ front of the vehicle exploiting Dende objects and their removal.
  • the lidar system 200 comprises an emitter 205, a receiver 210 and an evaluation device 215.
  • the emitter 205 is designed to emit a pulsed infrared light radiation 230 in an area in front of the motor vehicle.
  • the emitter 205 can emit short radiation pulses with a defined length of a few nanoseconds.
  • the emitter 205 may comprise, for example, an infrared emitting laser diode or infrared light emitting diode (IRED).
  • the light radiation 230 emitted by the emitter 205 can be reflected on an object 220 located in front of the motor vehicle.
  • the reflected radiation 231 or a Part of it can be received by the receiver 210.
  • the receiver 210 comprises a photodiode detector 100 for spatially resolved radiation detection.
  • the detector 100 is adapted as a function of the incident radiation 231 reflektier- th electric detector signals 235 to erzeu ⁇ gene, which are transmitted to the evaluation device 215th
  • the receiver 210 may additionally comprise an optical system (not shown) upstream of the detector 100, via which the reflected radiation 231 can be directed onto the detector 100.
  • the evaluation device 215 is designed to perform a corresponding evaluation using the detector signals 235. This includes determining the transit time of the radiation pulses reflected on the object 220, and determining therefrom the distance of the object 220 to the motor vehicle (time-of-flight measurement).
  • FIG. 2 shows a front view of a front side of a possible embodiment of a pixelated photodiode detector 100 which can be used in the lidar system 200 of FIG.
  • the detector 100 has a right ⁇ angled strip-shaped supervisory form.
  • the detector 100 has a pixelated structure with a row of a plurality of radiation-sensitive pixels 110 arranged next to one another.
  • the pixel row of the detector 100 may include five pixels 110.
  • the photosensitive pixels 110 represent the active areas of the detector 100, via which the radiation detection can take place.
  • the detector 100 of Figure 2 is designed such that the detector 100 are in areas of the side of the pixel 110 and the pixel 110 around and thus also in regions 125 between the pixels 110 which be ⁇ features hereinafter referred to as intermediate areas 125, light-insensitive is.
  • the detector 100 has a front shield 120 with the individual pixels 110 associated openings 121 (see. also the cross-sectional view of Figure 4). Over the contours of the openings 121, the contours of the pixels 110, and thus also the supervisory forms of the shielded light-insensitive areas and intermediate areas 125 are predetermined. In the regions and intermediate regions 125 provided with the shielding 120, unlike the pixels 110, there is no radiation detection.
  • the design of the detector 110 with the intermediate regions 125 separating the pixels 110 ensures inter alia that crosstalk between the pixels 110 can be suppressed.
  • front side contacts 130 of the detector 100 are shown in FIG. These are located at the edge or in the region of corners of the pixels 110.
  • the contacts 130 are realized in the form of (in the present example, rectangular) Kunststoffflä ⁇ chen.
  • bonding wires used can be closed at ⁇ (not shown), for example, for contacting the detector.
  • ei ⁇ ne extension direction is indicated 150, the pixel row additional basis of a horizontal arrow, ent ⁇ long which the pixels 110 are arranged side by side.
  • a direction perpendicular to the Leasere ⁇ ckungsraum 150 lateral direction 151 is ones shown, provides.
  • the extension direction 150 and the direction 151 perpendicular thereto it is pointed out that both the directions indicated by the directional arrows and the directions inverse thereto are included hereof.
  • the detector 100 faces the front side of the radiation 231 to be detected.
  • Wei ⁇ direct the detector 100 is arranged such that the pixel row is oriented in the horizontal direction and thus the direction of extension 150 of the series parallel or congruent to the horizontal direction.
  • the pixels 110 defined via the openings 121 of the shield 120 have appearance shapes different from a rectangular shape.
  • the pixels 110 have interlocking, in the present case stepwise interlocking contours.
  • the pixels 110 are formed in such a way that, viewed from above, opposite sides 163 of adjacent pixels 110 each extend in steps and partly deviate from the perpendicular direction 151 to the extension direction 150 of the pixel row.
  • 163 have the opposite sides of adjacent pixels 110 in each case two sections perpendicular to the Clearre ⁇ ckungscardi 150 and 151 in the direction of waste and therebetween a thereto inclined portion. These side sections of the step-shaped sides 163 of adjacent pixels 110 also extend parallel to one another, so that the radiation- insensitive intermediate regions 125 have a line-shaped or strip-shaped supervisory shape. Corresponding to the step-shaped sides 163, the intermediate regions 125 have a step-shaped profile which deviates in part from the vertical direction 151.
  • Other pixel pages 161, 162 of the pixels 110 are in the same sub ⁇ divided this rectilinear.
  • the pixels 110 extend partially alongside one another along the extension direction 150 of the pixel row. Therefore, overlap areas 155 in each of which can be effected a common Strah ⁇ lung gathering over two adjacent pixels 110th In FIG. 2, such an overlapping area 155 of two pixels 110 is indicated by dashed lines.
  • This embodiment of the detector 100 offers the possibility of avoiding the presence of dead areas along the extension direction 150 of the pixel row. Despite the intermediate regions 125 separating the individual pixels 110, therefore, a radiation along the extension direction 150 of the pixel row can be detected continuously across the pixels 110 of the detector 100.
  • FIG. 3 shows waveforms 171 of the local radiation sensitivity S of the pi xel 110 of the detector 100 of Figure 2.
  • Each curve 171 bil ⁇ det the sensitivity S of a pixel 110 in response to a lateral position P along the extending direction of the pixel row 150 from.
  • the magnitude of the sensitivity S depends on the width of the pixels 110 relative to the vertical direction 151.
  • the curves 171 are shown in different ways with solid or dashed lines in order to facilitate the assignment to the corresponding pixels 110 of the detector 100.
  • the above-explained geometric design of the pixels 110 is associated with a partial overlapping of the local sensitivities S of the pixels 110 along the extension direction 150 of the pixel row.
  • the detector 100 thus comprises, based on the Warre- ckungsraum 150 of the pixel row, overlapping Empfangskanä ⁇ le on. This allows the gap-free radiation detection along the extension direction 150.
  • the detector 100 of Figure 2 is used in the lidar system 200 of Figure 1 with a horizontal alignment of the pixel row.
  • the design of the detector 100 allows a horizontal overlap for its channels, so that gen a continuous Strah ⁇ lung gathering may be achieved in the horizontal direction. In this way, it is also possible to reliably detect objects or obstacles with a small horizontal extent on the basis of the radiation 231 reflected thereon and coming to the detector 100.
  • Such obstacles are, for example, columnar Hinder ⁇ nisse such as people, trees, pillars, etc.
  • the pixels 110 of the detector 100 may have lateral dimensions in the range of several hundred microns or other, for example, larger dimensions.
  • the pixels 110 in the direction 150 may have dimensions in the range of 600 ⁇ m, and in the direction 151 dimensions in the range of 100 ⁇ m.
  • the intermediate regions 125 may have a width in the range of 10 ⁇ m or else another, for example, smaller width. Such dimensions may also be used for detector layouts described below.
  • Figure 4 shows a cross-sectional view of a section of the pixelated photo diode detector 100, reference to which white ⁇ tere details will be apparent to the structure.
  • the detector 100 is designed in the form of a monolithic semiconductor component or semiconductor chip and has a semiconductor layer 111 in which a plurality of photodiodes arranged next to one another are formed.
  • each pixel is assigned 110 ei ⁇ ne corresponding photodiode or pixel 110, each corresponding photodiode.
  • the semiconductor layer 111 has a layer region 112 with a first doping and, for each of the photodiodes, a thin front-side layer region 113 with a second doping which is inverse to the first doping.
  • the layer region 112 to be n-type
  • the layer regions 113 arranged next to one another to be p-type.
  • each photodiode may have a corresponding pn junction.
  • This structure can be used during operation of the detector 100 ensure that charge carriers (electron-hole pairs) generated in the semiconductor layer 111 by radiation absorption are separated or in the differently doped ones
  • Layer regions 112, 113 can drift, and thus electrical detector signals can be generated.
  • the detector 100 further includes, as shown in Figure 4 is a arranged on the semiconductor layer 111 ⁇ front side anti-reflection layer 115 on. With the aid of the anti-reflection layer 115, a reflection of radiation at the front side of the detector 100 can be suppressed.
  • FIG. 4 shows the front-side contacts 130 provided in the region of the pixels 110.
  • the contacts 130 extend through the antireflection layer 115 to the layer regions 113 of the photodiodes so that the layer regions 113 can be contacted via them.
  • the contacts 130 may comprise a metallic material.
  • the detector 100 may have another contact, not shown. This may be, for example, a planar contact, which is arranged on a reverse side of the detector 100 opposite to the front side or of the semiconductor layer 111.
  • the shield 120 of the detector 100 is shown with the openings 121 through which the Kontu ⁇ ren the pixel are specified 110th
  • the shield 120 is disposed on the antireflection film 115.
  • the shield 120 may comprise a metallic material. This may be the same metallic material from which the front side contacts 130 may be formed. 4 also indicates that the front-side layer regions 113 of the photodiodes have the same lateral aberrations. measurements as the openings 121 of the shield 120 may have.
  • the detector further layers and / or structures aufwei ⁇ sen 100 may in cross-section, if necessary.
  • the detector 100 may be formed with an additional oxide layer, which is arranged in the region of Ab ⁇ shielding 120 between the anti-reflection layer 115 and the semiconductor layer 111th
  • FIG. 5 shows a top view of a front side of another embodiment of a pixelated photodiode detector 100.
  • the detector 100 has a row of several or five radiation-sensitive pixels 110 arranged next to one another.
  • the contours of the pixels 110 are predetermined via openings 121 of a front-side shield 120 of the detector 100.
  • the pixels 110 have zigzag-shaped contours.
  • the pixels 110 are formed such that viewed from above opposite sides 164 of adjacent pixels 110 each have a zigzag course with obliquely to the extension direction 150 of the pixel row and to the vertical direction 151 extending portions.
  • the side portions of the zigzag-shaped sides 164 of adjacent pixels 110 also extend parallel to one another, such that the shielded or radiation-insensitive intermediate regions 125 present between the pixels 110 have a strip-shaped, zigzag-shaped supervisory shape.
  • Other pages 161, 162 of the pixel 110 are in a straight line duri ⁇ fend and extending in the extension direction 150 and in the case of the sides 162 which are provided at the row ends only at the pixels 110 in the vertical direction 151st
  • the configuration of the detector 100 of FIG. 5 with the partially zigzagged contours of the pixels 110 makes it possible for all the pixels of the row, including the two pixels 110 at the two row ends, to have substantially identical dimensions or area dimensions.
  • the interlocking contours of the pixels 110 of the detector 100 of FIG. 5 result in the pixels 110 extending partially alongside one another along the extension direction 150 of the pixel row, and therefore there are overlapping regions 155 in which a radiation is jointly detected via two adjacent pixels 110 can.
  • the detectors 100 shown in Figures 2, 5 have in each case to a row of juxtaposed radiation-sensitive pixels ⁇ 110th This can also be referred to as an ld arrangement. However, comparable designs with several offset or mutually parallel pixel rows are also possible. Such a construction may also be referred to as a 2d arrangement.
  • the detector 100 has two parallel rows of respectively several pixels or five pixels 110 arranged next to one another.
  • the pixel rows which extend along a direction of extension 150 are formed similarly to the pixel row of the Detek ⁇ gate 100 of FIG. 5 In the individual rows, therefore, the pixels 110 have zigzag-shaped contours, which is realized by a zigzag course of opposite sides 164 of adjacent pixels 110. Therefore, in the pixel rows of a Runaway ⁇ rising radiation detecting the direction of extension 150 is possible.
  • the pixels 110 of the various rows of pixels are separated by a shielded, insensitive radiation region. Furthermore, rectilinear and in the direction 150 extending sides 161 of adjacent pixels 110 of the various rows face each other.
  • a detector 100 with a 2d arrangement of pixels 110 can also be realized with pixels 110, which for example have a supervisory shape corresponding to FIG. 2 or else another form. Furthermore, can realize tor 100 with more than two parallel pixel rows ⁇ such Detek-.
  • FIG. 8 shows a top view of a front side of another embodiment of a pixelated photodiode detector 100.
  • the detector 100 has essentially the same structure as the detector 100 shown in FIG. 2, that is to say a row of pixels 110 with stepwise interlocking contours.
  • the detector 100 of FIG. 8 has front-side contacts 131 which, viewed from above, each comprise a planar contact section 132 and a linear contact section 133.
  • This Ausgestal ⁇ tion can allow a lower electrical resistance compared to the contacts 130.
  • bonding wires can be connected to the flat contact portions 132 of the contacts 131.
  • the contacts 131 may be similar to the contacts 130 by a front side anti-reflection layer 115 through to the corresponding ⁇ layer regions 113 of photodiodes extending (see FIG. 4).
  • Front-side contacts 131 exhibiting planar and linienför--shaped contact portions 132, 133 may be provided in a corresponding Wei ⁇ se at detectors 100, which differs from Figure 8 embodiments, respectively, of forms of pixels
  • FIG. 9 shows a AufSichtsdar ein a Front side of a further embodiment of a pixelated photodiode detector 100.
  • the detector 100 has a row of several or five adjacent radiation-sensitive pixels 110, the contours of which are predetermined via openings 121 of a front-side shield 120 of the detector 100.
  • adjacent pixels 110 have respective opposite sides 165, which parallel to one another and obliquely to the extending direction of the pixel row 150, as well as obliquely to the perpendicular direction 151 duri ⁇ fen. Therefore, the radiation-insensitive intermediate regions 125 present between the pixels 110 have a strip-shaped and obliquely to the directions 150, 151 occidentalrecking supervisory form. Further sides 161, 162 of the pixels 110 are likewise rectilinear or extend in the extension direction 150 and in the vertical direction 151 in the case of the sides 162 which are present only at the pixels 110 at the row ends.
  • the pixels 110 are also complaintss to one another such that the pixels 110 ent ⁇ long direction of extension 150 partly extend alongside one another of the pixel row.
  • Radiation detection via two adjacent pixels 110 can be done. This results in a seamless radiation detecting the direction of extension 150.
  • the pixel 110 OERTLI ⁇ che radiation sensitivities S may have comparable to the detector 100 of FIG. 5
  • the curves 172 shown in FIG. 6 can therefore be used in a corresponding manner for the detector layout shown in FIG.
  • FIG. 1 A continuous radiation detection is also pungs- without overlap- or overlap regions 155 of adjacent Pi ⁇ xeln 110 possible.
  • FIG. 1 The detector 100 has essentially the same structure as the detector 100 shown in FIG. 2, that is to say a row of pixels 110, the opposite sides 163 of adjacent pixels 110 and the radiation-insensitive intermediate areas between them 125 have a stepped course.
  • the pixels 110 are arranged at a greater distance or distance such that the pixels 110 on the sides 163 extend as far as places which relate in each case to the direction of extension 150 of the row or in other words, that the pixels 110 on the sides 163 extend to matching positions with respect to the extending direction 150 of the row.
  • FIG. 10 shows waveforms 173 of the local radiation sensitivity S of the pixels 110 in Depending ⁇ ness a lateral position P along the extension direction 150.
  • Figure 11 shows waveforms 173 of the local radiation sensitivity S of the pixels 110 in Depending ⁇ ness a lateral position P along the extension direction 150.
  • pixels 110 be formed with other than the above lateral dimensions. Also, detectors 100 having other numbers of pixels 110 arranged side by side in a row, as well as other numbers of parallel pixel rows can be realized.
  • the contours of the pixels 110 are at least partially curved.
  • a round or curved contour portion may be provided at the locations at which the contours have correspondingly Figures 2, 5, 7, 8, 9, 10 tapering from ⁇ sections.
  • an occurrence of an increased electric field strength can be suppressed.
  • one possible modification is to form pixels 110 having contours such that opposite sides of adjacent pixels 110 of different rows are at least partially deviated from the extension direction 150 of the pixel rows.
  • the pixels 110 of different pixel rows have interlocking contours. In this way, overlapping receiving channels or a continuous radiation detection can also be provided in the direction perpendicular to the extension direction 150.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

L'invention concerne un détecteur pour un système lidar. Le détecteur présente une rangée de pixels sensibles au rayonnement disposés à côté les uns des autres. Les pixels de la rangée présentent des contours définis de façon que des côtés opposés de pixels voisins s'étendent au moins en partie de manière à diverger d'une direction verticale par rapport à une direction d'extension de la rangée. L'invention concerne également un système lidar comprenant un tel détecteur.
PCT/EP2016/052785 2015-02-10 2016-02-10 Détecteur et système lidar WO2016128436A1 (fr)

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DE102015101902.7A DE102015101902A1 (de) 2015-02-10 2015-02-10 Detektor und Lidar-System
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DE102017221797A1 (de) 2017-12-04 2019-06-06 Osram Gmbh Lidar-System zur Umfelderfassung und Verfahren zum Betreiben eines Lidar-Systems
DE102018207711A1 (de) 2018-05-17 2019-11-21 Osram Gmbh Abstandsmesseinheit
DE102019202442A1 (de) 2019-02-22 2020-08-27 Bruker Axs Gmbh Messanordnung für Röntgenstrahlung für eine spaltfreie 1D-Messung
DE102020209849A1 (de) 2020-08-05 2022-02-10 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Ermitteln eines optischen Übersprechens eines Lidar-Sensors und Lidar-Sensor
US20220050183A1 (en) * 2020-08-12 2022-02-17 Beijing Voyager Technology Co., Ltd. Intertwined detector array for an optical sensing system

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EP2451150A2 (fr) * 2010-11-03 2012-05-09 Rockwell Automation Technologies, Inc. Capteur de couleur insensible aux variations de distance
US20130153748A1 (en) * 2011-12-14 2013-06-20 Sony Corporation Solid-state image sensor and electronic apparatus

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