DE2012945A1 - - Google Patents

Info

Publication number
DE2012945A1
DE2012945A1 DE19702012945 DE2012945A DE2012945A1 DE 2012945 A1 DE2012945 A1 DE 2012945A1 DE 19702012945 DE19702012945 DE 19702012945 DE 2012945 A DE2012945 A DE 2012945A DE 2012945 A1 DE2012945 A1 DE 2012945A1
Authority
DE
Germany
Prior art keywords
zone
channel
contact layer
layer
interrupting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19702012945
Other languages
German (de)
English (en)
Other versions
DE2012945B2 (de
DE2012945C3 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2012945A1 publication Critical patent/DE2012945A1/de
Publication of DE2012945B2 publication Critical patent/DE2012945B2/de
Application granted granted Critical
Publication of DE2012945C3 publication Critical patent/DE2012945C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE2012945A 1969-03-25 1970-03-18 Halbleiterbauelement Expired DE2012945C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (en, 2012) 1969-03-25 1969-03-25

Publications (3)

Publication Number Publication Date
DE2012945A1 true DE2012945A1 (en, 2012) 1970-10-08
DE2012945B2 DE2012945B2 (de) 1977-12-29
DE2012945C3 DE2012945C3 (de) 1985-01-31

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2012945A Expired DE2012945C3 (de) 1969-03-25 1970-03-18 Halbleiterbauelement

Country Status (9)

Country Link
BE (1) BE747892A (en, 2012)
BR (1) BR7017682D0 (en, 2012)
CH (1) CH504102A (en, 2012)
DE (1) DE2012945C3 (en, 2012)
ES (1) ES377825A1 (en, 2012)
FR (1) FR2037251B1 (en, 2012)
GB (1) GB1300726A (en, 2012)
NL (1) NL6904543A (en, 2012)
SE (1) SE349425B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2625576A1 (de) * 1975-06-11 1976-12-30 Rca Corp Integrierte schaltungsvorrichtung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (en, 2012) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (en, 2012) * 1974-08-19 1982-01-20
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US5345101A (en) * 1993-06-28 1994-09-06 Motorola, Inc. High voltage semiconductor structure and method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
FR1337348A (fr) * 1961-09-08 1963-09-13 Pacific Semiconductors Transistors de couplage
FR1417163A (fr) * 1963-08-27 1965-11-12 Ibm Dispositifs semi-conducteurs et leur fabrication
FR1421136A (fr) * 1963-11-13 1965-12-10 Motorola Inc Dispositif semiconducteur avec jonction auxiliaire pour améliorer la caractéristique de claquage de la jonction principale
GB1113344A (en) * 1964-08-20 1968-05-15 Texas Instruments Inc Semiconductor devices
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1273700B (de) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Halbleiterbauelement
DE1464340A1 (de) * 1961-09-08 1969-03-13 Pacific Semiconductors Inc Halbleiterbauelement und Transistorschaltung fuer solche Bauelemente

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1459892A (fr) * 1964-08-20 1966-06-17 Texas Instruments Inc Dispositifs semi-conducteurs
FR1475201A (fr) * 1965-04-07 1967-03-31 Itt Dispositif plan à semi-conducteurs

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
FR1337348A (fr) * 1961-09-08 1963-09-13 Pacific Semiconductors Transistors de couplage
DE1464340A1 (de) * 1961-09-08 1969-03-13 Pacific Semiconductors Inc Halbleiterbauelement und Transistorschaltung fuer solche Bauelemente
FR1417163A (fr) * 1963-08-27 1965-11-12 Ibm Dispositifs semi-conducteurs et leur fabrication
FR1421136A (fr) * 1963-11-13 1965-12-10 Motorola Inc Dispositif semiconducteur avec jonction auxiliaire pour améliorer la caractéristique de claquage de la jonction principale
GB1113344A (en) * 1964-08-20 1968-05-15 Texas Instruments Inc Semiconductor devices
DE1273700B (de) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Halbleiterbauelement
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2625576A1 (de) * 1975-06-11 1976-12-30 Rca Corp Integrierte schaltungsvorrichtung

Also Published As

Publication number Publication date
CH504102A (de) 1971-02-28
NL6904543A (en, 2012) 1970-09-29
FR2037251A1 (en, 2012) 1970-12-31
GB1300726A (en) 1972-12-20
FR2037251B1 (en, 2012) 1974-09-20
DE2012945B2 (de) 1977-12-29
DE2012945C3 (de) 1985-01-31
BR7017682D0 (pt) 1973-04-17
SE349425B (en, 2012) 1972-09-25
ES377825A1 (es) 1972-05-16
BE747892A (fr) 1970-09-24

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Legal Events

Date Code Title Description
8281 Inventor (new situation)

Free format text: BOSSELAAR, CORNELIS ALBERTUS, NIJMEGEN, NL

C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee