DE19983529T1 - Zinkstannatpufferschicht aufweisende photovoltaische Bauelemente und Verfahren zur Herstellung derselben - Google Patents
Zinkstannatpufferschicht aufweisende photovoltaische Bauelemente und Verfahren zur Herstellung derselbenInfo
- Publication number
- DE19983529T1 DE19983529T1 DE19983529T DE19983529T DE19983529T1 DE 19983529 T1 DE19983529 T1 DE 19983529T1 DE 19983529 T DE19983529 T DE 19983529T DE 19983529 T DE19983529 T DE 19983529T DE 19983529 T1 DE19983529 T1 DE 19983529T1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- same
- buffer layer
- zinc stannate
- photovoltaic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/149,430 US6169246B1 (en) | 1998-09-08 | 1998-09-08 | Photovoltaic devices comprising zinc stannate buffer layer and method for making |
PCT/US1999/020145 WO2000014812A1 (en) | 1998-09-08 | 1999-09-02 | Photovaltaic devices comprising zinc stannate buffer layer and method for making |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19983529T1 true DE19983529T1 (de) | 2001-08-16 |
Family
ID=22530245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19983529T Withdrawn DE19983529T1 (de) | 1998-09-08 | 1999-09-02 | Zinkstannatpufferschicht aufweisende photovoltaische Bauelemente und Verfahren zur Herstellung derselben |
Country Status (5)
Country | Link |
---|---|
US (1) | US6169246B1 (de) |
JP (1) | JP2002524882A (de) |
AU (1) | AU6242299A (de) |
DE (1) | DE19983529T1 (de) |
WO (1) | WO2000014812A1 (de) |
Families Citing this family (104)
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US7163835B2 (en) * | 2003-09-26 | 2007-01-16 | E. I. Du Pont De Nemours And Company | Method for producing thin semiconductor films by deposition from solution |
US20050098202A1 (en) * | 2003-11-10 | 2005-05-12 | Maltby Robert E.Jr. | Non-planar photocell |
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WO2013119550A1 (en) * | 2012-02-10 | 2013-08-15 | Alliance For Sustainable Energy, Llc | Thin film photovoltaic devices with a minimally conductive buffer layer |
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US10141497B2 (en) | 2012-07-31 | 2018-11-27 | Hewlett-Packard Development Company, L.P. | Thin film stack |
WO2014077895A1 (en) | 2012-11-19 | 2014-05-22 | Alliance For Sustainable Energy, Llc | Devices and methods featuring the addition of refractory metals to contact interface layers |
US20140246083A1 (en) | 2013-03-01 | 2014-09-04 | First Solar, Inc. | Photovoltaic devices and method of making |
CN104425653B (zh) * | 2013-08-30 | 2017-11-21 | 中国建材国际工程集团有限公司 | 用于薄层太阳能电池的附加的底层 |
US9246062B2 (en) | 2014-04-23 | 2016-01-26 | Intermolecular, Inc. | Zinc stannate ohmic contacts for p-type gallium nitride |
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Publication number | Priority date | Publication date | Assignee | Title |
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US4254093A (en) | 1976-11-09 | 1981-03-03 | Gte Products Corporation | Solar energy grade cadmium sulfide |
US4207119A (en) | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
US4445965A (en) | 1980-12-01 | 1984-05-01 | Carnegie-Mellon University | Method for making thin film cadmium telluride and related semiconductors for solar cells |
US4393267A (en) | 1981-05-26 | 1983-07-12 | Chevron Research Company | Method for improving the efficiency of a solar cell and an improved cadmium sulfide/copper sulfide photovoltaic cell |
EP0091998A1 (de) | 1982-03-08 | 1983-10-26 | Prutec Limited | Cadmium-Sulfid-Solarzellen |
US4529832A (en) | 1984-02-21 | 1985-07-16 | Savin Corporation | Lead-cadmium-sulphide solar cell |
US4536607A (en) | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
US4611091A (en) | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
US4650921A (en) | 1985-10-24 | 1987-03-17 | Atlantic Richfield Company | Thin film cadmium telluride solar cell |
US4826777A (en) | 1987-04-17 | 1989-05-02 | The Standard Oil Company | Making a photoresponsive array |
DE4132882C2 (de) | 1991-10-03 | 1996-05-09 | Antec Angewandte Neue Technolo | Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen |
US5261968A (en) | 1992-01-13 | 1993-11-16 | Photon Energy, Inc. | Photovoltaic cell and method |
US5922142A (en) * | 1996-11-07 | 1999-07-13 | Midwest Research Institute | Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making |
-
1998
- 1998-09-08 US US09/149,430 patent/US6169246B1/en not_active Expired - Lifetime
-
1999
- 1999-09-02 JP JP2000569456A patent/JP2002524882A/ja active Pending
- 1999-09-02 AU AU62422/99A patent/AU6242299A/en not_active Abandoned
- 1999-09-02 WO PCT/US1999/020145 patent/WO2000014812A1/en active Application Filing
- 1999-09-02 DE DE19983529T patent/DE19983529T1/de not_active Withdrawn
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WO2000014812A1 (en) | 2000-03-16 |
AU6242299A (en) | 2000-03-27 |
US6169246B1 (en) | 2001-01-02 |
JP2002524882A (ja) | 2002-08-06 |
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