DE19952712A1 - Laserdiodenvorrichtung - Google Patents

Laserdiodenvorrichtung

Info

Publication number
DE19952712A1
DE19952712A1 DE19952712A DE19952712A DE19952712A1 DE 19952712 A1 DE19952712 A1 DE 19952712A1 DE 19952712 A DE19952712 A DE 19952712A DE 19952712 A DE19952712 A DE 19952712A DE 19952712 A1 DE19952712 A1 DE 19952712A1
Authority
DE
Germany
Prior art keywords
laser diode
laser
housing
led
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19952712A
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE19952712A priority Critical patent/DE19952712A1/de
Priority to TW089122987A priority patent/TW478223B/zh
Priority to JP2001535210A priority patent/JP5064626B2/ja
Priority to DE50011296T priority patent/DE50011296D1/de
Priority to EP00987065A priority patent/EP1177605B1/de
Priority to CN00802491A priority patent/CN1336027A/zh
Priority to KR1020017008462A priority patent/KR20010089757A/ko
Priority to AT00987065T priority patent/ATE306133T1/de
Priority to CA002356323A priority patent/CA2356323A1/en
Priority to PCT/DE2000/003852 priority patent/WO2001033607A2/de
Publication of DE19952712A1 publication Critical patent/DE19952712A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE19952712A 1999-11-02 1999-11-02 Laserdiodenvorrichtung Withdrawn DE19952712A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE19952712A DE19952712A1 (de) 1999-11-02 1999-11-02 Laserdiodenvorrichtung
TW089122987A TW478223B (en) 1999-11-02 2000-11-01 Laser-diode device
JP2001535210A JP5064626B2 (ja) 1999-11-02 2000-11-02 レーザダイオード装置およびその製造方法
DE50011296T DE50011296D1 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und herstellungsverfahren
EP00987065A EP1177605B1 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und herstellungsverfahren
CN00802491A CN1336027A (zh) 1999-11-02 2000-11-02 激光二极管装置及其制造方法
KR1020017008462A KR20010089757A (ko) 1999-11-02 2000-11-02 레이저 다이오드 장치 및 상기 장치를 제조하기 위한 방법
AT00987065T ATE306133T1 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und herstellungsverfahren
CA002356323A CA2356323A1 (en) 1999-11-02 2000-11-02 Laser diode device and method for the manufacture thereof
PCT/DE2000/003852 WO2001033607A2 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und verfahren zu deren herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19952712A DE19952712A1 (de) 1999-11-02 1999-11-02 Laserdiodenvorrichtung

Publications (1)

Publication Number Publication Date
DE19952712A1 true DE19952712A1 (de) 2001-05-10

Family

ID=7927658

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19952712A Withdrawn DE19952712A1 (de) 1999-11-02 1999-11-02 Laserdiodenvorrichtung
DE50011296T Expired - Lifetime DE50011296D1 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50011296T Expired - Lifetime DE50011296D1 (de) 1999-11-02 2000-11-02 Laserdiodenvorrichtung und herstellungsverfahren

Country Status (9)

Country Link
EP (1) EP1177605B1 (enExample)
JP (1) JP5064626B2 (enExample)
KR (1) KR20010089757A (enExample)
CN (1) CN1336027A (enExample)
AT (1) ATE306133T1 (enExample)
CA (1) CA2356323A1 (enExample)
DE (2) DE19952712A1 (enExample)
TW (1) TW478223B (enExample)
WO (1) WO2001033607A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7271419B2 (en) 2003-08-29 2007-09-18 Osram Opto Semiconductor Gmbh Laser device having a plurality of emission zones
US20180284236A1 (en) * 2017-04-03 2018-10-04 Robert Bosch Gmbh Lidar device and method for scanning a scan angle
WO2018219687A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-bauteil und verfahren zur herstellung eines halbleiterlaser-bauteils

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031885A (ja) 2001-07-19 2003-01-31 Toshiba Corp 半導体レーザ装置
KR100997198B1 (ko) 2008-05-06 2010-11-29 김민공 프레스 단조 방식의 발광다이오드 금속제 하우징 및 금속제하우징을 이용한 발광다이오드 금속제 패키지
DE102011116534B4 (de) 2011-10-20 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement
CN103682030B (zh) * 2012-09-07 2017-05-31 深圳市龙岗区横岗光台电子厂 Led、led装置及led制作工艺
TWI566427B (zh) * 2013-07-05 2017-01-11 晶元光電股份有限公司 發光元件及其製造方法
CN109802014B (zh) 2013-07-05 2022-05-31 晶元光电股份有限公司 发光元件及其制造方法
CN104377542A (zh) * 2014-12-04 2015-02-25 中国科学院半导体研究所 一种半导体激光器引脚式封装结构及方法
DE102016106896A1 (de) 2016-04-14 2017-10-19 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauteil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
DE19526389A1 (de) * 1995-07-19 1997-01-23 Siemens Ag Halbleiterlaserchip und Infrarot-Emitter-Bauelement
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167083A (ja) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
JPH06334247A (ja) * 1993-05-20 1994-12-02 Hamamatsu Photonics Kk 半導体レーザの駆動制御回路及び駆動回路
JPH0974243A (ja) * 1995-09-04 1997-03-18 Mitsubishi Electric Corp 半導体レーザ
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
DE19526389A1 (de) * 1995-07-19 1997-01-23 Siemens Ag Halbleiterlaserchip und Infrarot-Emitter-Bauelement
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z.: ZIEL, J.P. von der and TSANG, W.T.: "Integrated multilayer GaAs lasers separated by tunnel junctions", Appl.Phys.Lett. 41 (6), 1982, S. 499-501 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7271419B2 (en) 2003-08-29 2007-09-18 Osram Opto Semiconductor Gmbh Laser device having a plurality of emission zones
US20180284236A1 (en) * 2017-04-03 2018-10-04 Robert Bosch Gmbh Lidar device and method for scanning a scan angle
DE102017205623A1 (de) * 2017-04-03 2018-10-04 Robert Bosch Gmbh LIDAR-Vorrichtung und Verfahrens zum Abtasten eines Abtastwinkels
US10852397B2 (en) 2017-04-03 2020-12-01 Robert Bosch Gmbh LIDAR device and method for scanning a scan angle
DE102017205623B4 (de) 2017-04-03 2025-03-13 Robert Bosch Gmbh LIDAR-Vorrichtung und Verfahrens zum Abtasten eines Abtastwinkels
WO2018219687A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-bauteil und verfahren zur herstellung eines halbleiterlaser-bauteils
US11189990B2 (en) 2017-06-02 2021-11-30 Osram Oled Gmbh Semiconductor laser component and method of producing a semiconductor laser component

Also Published As

Publication number Publication date
KR20010089757A (ko) 2001-10-08
CN1336027A (zh) 2002-02-13
WO2001033607A2 (de) 2001-05-10
ATE306133T1 (de) 2005-10-15
DE50011296D1 (de) 2006-02-16
TW478223B (en) 2002-03-01
EP1177605A2 (de) 2002-02-06
EP1177605B1 (de) 2005-10-05
WO2001033607A3 (de) 2001-10-25
JP5064626B2 (ja) 2012-10-31
CA2356323A1 (en) 2001-05-10
JP2003513463A (ja) 2003-04-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8181 Inventor (new situation)

Free format text: ACKLIN, BRUNO, DR., 93047 REGENSBURG, DE BEHRINGER, MARTIN, DR., 93051 REGENSBURG, DE HEERLEIN, JOERG, DR., 93161 SINZING, DE LUFT, JOHANN, 93195 WOLFSEGG, DE SCHLERETH, KARL-HEINZ, DR., 93133 BURGLENGENFELD, DE SPAETH, WERNER, DR., 83607 HOLZKIRCHEN, DE SPIKA, ZELJKO, DR., 93047 REGENSBURG, DE HANKE, CHRISTIAN, DR., 81737 MUENCHEN, DE KORTE, LUTZ, DR., 83620 FELDKIRCHEN-WESTERHAM, DE EBELING, KARL, PROF. DR., 89075 ULM, DE

8127 New person/name/address of the applicant

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, 93049 REGENSBURG,

8130 Withdrawal