DE19915898B4 - Lichtmodulator und Verfahren zu dessen Herstellung - Google Patents
Lichtmodulator und Verfahren zu dessen Herstellung Download PDFInfo
- Publication number
- DE19915898B4 DE19915898B4 DE19915898A DE19915898A DE19915898B4 DE 19915898 B4 DE19915898 B4 DE 19915898B4 DE 19915898 A DE19915898 A DE 19915898A DE 19915898 A DE19915898 A DE 19915898A DE 19915898 B4 DE19915898 B4 DE 19915898B4
- Authority
- DE
- Germany
- Prior art keywords
- layer
- bonding pad
- section
- insulation layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000009413 insulation Methods 0.000 claims abstract description 124
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000031700 light absorption Effects 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 358
- 230000003068 static effect Effects 0.000 claims description 34
- 230000003071 parasitic effect Effects 0.000 claims description 33
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000008719 thickening Effects 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/066—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide channel; buried
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-224241 | 1998-08-07 | ||
| JP10224241A JP2000056281A (ja) | 1998-08-07 | 1998-08-07 | 光変調器とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19915898A1 DE19915898A1 (de) | 2000-02-17 |
| DE19915898B4 true DE19915898B4 (de) | 2008-04-10 |
Family
ID=16810711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19915898A Expired - Fee Related DE19915898B4 (de) | 1998-08-07 | 1999-04-08 | Lichtmodulator und Verfahren zu dessen Herstellung |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6282009B1 (enExample) |
| JP (1) | JP2000056281A (enExample) |
| DE (1) | DE19915898B4 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000056281A (ja) * | 1998-08-07 | 2000-02-25 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
| SG102589A1 (en) * | 2000-08-16 | 2004-03-26 | Inst Materials Research & Eng | Buried hetero-structure opto-electronic device |
| US6580843B2 (en) | 2001-04-05 | 2003-06-17 | Fujitsu Limited | Optical device |
| US7449354B2 (en) | 2006-01-05 | 2008-11-11 | Fairchild Semiconductor Corporation | Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US20080070411A1 (en) * | 2006-09-20 | 2008-03-20 | John Ghekiere | Methods for uniformly etching films on a semiconductor wafer |
| US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8227855B2 (en) * | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
| US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
| US8049276B2 (en) * | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
| TW201426151A (zh) * | 2012-12-19 | 2014-07-01 | Hon Hai Prec Ind Co Ltd | 電光調製器 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0662627A1 (en) * | 1993-12-20 | 1995-07-12 | Nec Corporation | Optical modulator and method of producing the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710171B2 (ja) * | 1991-02-28 | 1998-02-10 | 日本電気株式会社 | 面入出力光電融合素子 |
| JP2754957B2 (ja) * | 1991-07-10 | 1998-05-20 | 日本電気株式会社 | 半導体光制御素子およびその製造方法 |
| JP3484543B2 (ja) * | 1993-03-24 | 2004-01-06 | 富士通株式会社 | 光結合部材の製造方法及び光装置 |
| US5889913A (en) * | 1995-03-15 | 1999-03-30 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of fabricating the same |
| JPH08316579A (ja) | 1995-05-18 | 1996-11-29 | Toshiba Corp | 光半導体素子及びその製造方法 |
| FR2748129B1 (fr) | 1996-04-29 | 1998-06-12 | Alsthom Cge Alcatel | Modulateur electro-optique a puits quantiques |
| JPH1075009A (ja) * | 1996-08-30 | 1998-03-17 | Nec Corp | 光半導体装置とその製造方法 |
| JP2000056281A (ja) * | 1998-08-07 | 2000-02-25 | Mitsubishi Electric Corp | 光変調器とその製造方法 |
-
1998
- 1998-08-07 JP JP10224241A patent/JP2000056281A/ja active Pending
-
1999
- 1999-02-08 US US09/245,838 patent/US6282009B1/en not_active Expired - Fee Related
- 1999-04-08 DE DE19915898A patent/DE19915898B4/de not_active Expired - Fee Related
-
2001
- 2001-04-23 US US09/839,120 patent/US6384955B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0662627A1 (en) * | 1993-12-20 | 1995-07-12 | Nec Corporation | Optical modulator and method of producing the same |
Non-Patent Citations (1)
| Title |
|---|
| J. Lightwave Techn. Vol. LT-4, No.10, (1986), pp. 1445-0453 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010022681A1 (en) | 2001-09-20 |
| US6282009B1 (en) | 2001-08-28 |
| US6384955B2 (en) | 2002-05-07 |
| JP2000056281A (ja) | 2000-02-25 |
| DE19915898A1 (de) | 2000-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |