DE19882660T1 - Optisches Verfahren für die Kennzeichnung der elektrischen Eigenschaften von Halbleitern und Isolierfilmen - Google Patents

Optisches Verfahren für die Kennzeichnung der elektrischen Eigenschaften von Halbleitern und Isolierfilmen

Info

Publication number
DE19882660T1
DE19882660T1 DE19882660T DE19882660T DE19882660T1 DE 19882660 T1 DE19882660 T1 DE 19882660T1 DE 19882660 T DE19882660 T DE 19882660T DE 19882660 T DE19882660 T DE 19882660T DE 19882660 T1 DE19882660 T1 DE 19882660T1
Authority
DE
Germany
Prior art keywords
semiconductors
marking
insulating films
electrical properties
optical method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19882660T
Other languages
English (en)
Other versions
DE19882660B4 (de
Inventor
Humphrey J Maris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brown University Research Foundation Inc
Original Assignee
Brown University Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/924,792 external-priority patent/US6008906A/en
Application filed by Brown University Research Foundation Inc filed Critical Brown University Research Foundation Inc
Publication of DE19882660T1 publication Critical patent/DE19882660T1/de
Application granted granted Critical
Publication of DE19882660B4 publication Critical patent/DE19882660B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE19882660T 1997-09-05 1998-07-13 Optisches Verfahren für die Kennzeichnung der elektrischen Eigenschaften von Halbleitern und Isolierfilmen Expired - Lifetime DE19882660B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/924,792 US6008906A (en) 1995-08-25 1997-09-05 Optical method for the characterization of the electrical properties of semiconductors and insulating films
US08/924,792 1997-09-05
PCT/US1998/014180 WO1999013318A1 (en) 1997-09-05 1998-07-13 Optical method for the characterization of the electrical properties of semiconductors and insulating films

Publications (2)

Publication Number Publication Date
DE19882660T1 true DE19882660T1 (de) 2002-06-20
DE19882660B4 DE19882660B4 (de) 2009-01-29

Family

ID=25450735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882660T Expired - Lifetime DE19882660B4 (de) 1997-09-05 1998-07-13 Optisches Verfahren für die Kennzeichnung der elektrischen Eigenschaften von Halbleitern und Isolierfilmen

Country Status (3)

Country Link
DE (1) DE19882660B4 (de)
TW (1) TW447062B (de)
WO (1) WO1999013318A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231626A1 (de) 2001-02-10 2002-08-14 Infineon Technologies SC300 GmbH & Co. KG Messanordnung
US6668654B2 (en) * 2001-08-15 2003-12-30 Lockheed Martin Corporation Method and apparatus for generating specific frequency response for ultrasound testing
TWI420094B (zh) * 2006-07-17 2013-12-21 Xitronix Corp 於半導體結構中應變及主動性摻雜物之光反射特徵的方法
JP5822194B2 (ja) * 2011-09-29 2015-11-24 株式会社Ｓｃｒｅｅｎホールディングス 半導体検査方法および半導体検査装置
JP5871141B2 (ja) * 2013-10-11 2016-03-01 横河電機株式会社 光電変換素子評価装置
JP5865946B2 (ja) 2014-05-22 2016-02-17 株式会社ユニソク 過渡吸収測定方法及び過渡吸収測定装置
KR102139988B1 (ko) * 2018-07-12 2020-07-31 한국표준과학연구원 수직입사 타원계측기 및 이를 이용한 시편의 광물성 측정 방법
CN109580753B (zh) * 2018-10-10 2023-08-01 金华职业技术学院 一种结合电化学的光谱测量方法
CN116916033B (zh) * 2022-06-24 2024-05-10 澳门大学 一种基于随机自适应傅里叶分解的联合时空视频压缩方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0200301A1 (de) * 1985-03-01 1986-11-05 Therma-Wave Inc. Verfahren und Vorrichtung zum Auswerten von Eigenschaften der Oberfläche und des Inneren eines Halbleiters
US4710030A (en) * 1985-05-17 1987-12-01 Bw Brown University Research Foundation Optical generator and detector of stress pulses
US5255070A (en) * 1989-07-20 1993-10-19 Pollak Fred H Method for determining interface properties of semiconductor materials by photoreflectance
US5074669A (en) * 1989-12-12 1991-12-24 Therma-Wave, Inc. Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5287169A (en) * 1991-05-03 1994-02-15 Brooklyn College Research And Development Foundation Contractless mode of electroreflectance
JP2953184B2 (ja) * 1992-03-19 1999-09-27 三菱マテリアル株式会社 光非線形媒質体の屈折率格子形成時間の測定方法及びその装置
US5379109A (en) * 1992-06-17 1995-01-03 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for non-destructively measuring local resistivity of semiconductors
US5748318A (en) * 1996-01-23 1998-05-05 Brown University Research Foundation Optical stress generator and detector
US5748317A (en) * 1997-01-21 1998-05-05 Brown University Research Foundation Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector

Also Published As

Publication number Publication date
TW447062B (en) 2001-07-21
DE19882660B4 (de) 2009-01-29
WO1999013318A1 (en) 1999-03-18

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Legal Events

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8364 No opposition during term of opposition
R071 Expiry of right