DE1963738A1 - Verfahren zur Herstellung von Selengleichrichterplatten - Google Patents

Verfahren zur Herstellung von Selengleichrichterplatten

Info

Publication number
DE1963738A1
DE1963738A1 DE19691963738 DE1963738A DE1963738A1 DE 1963738 A1 DE1963738 A1 DE 1963738A1 DE 19691963738 DE19691963738 DE 19691963738 DE 1963738 A DE1963738 A DE 1963738A DE 1963738 A1 DE1963738 A1 DE 1963738A1
Authority
DE
Germany
Prior art keywords
selenium
layer
halogen
indium
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691963738
Other languages
German (de)
English (en)
Inventor
Hans-Peter Dr-Ing Hempel
Erwin Ross
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE19691963738 priority Critical patent/DE1963738A1/de
Priority to GB5860170A priority patent/GB1331074A/en
Priority to SE16964/70A priority patent/SE356166B/xx
Priority to ES387300A priority patent/ES387300A1/es
Priority to FR7045723A priority patent/FR2073483B1/fr
Publication of DE1963738A1 publication Critical patent/DE1963738A1/de
Priority to ES1973191965U priority patent/ES191965Y/es
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Physical Vapour Deposition (AREA)
  • Hybrid Cells (AREA)
DE19691963738 1969-12-19 1969-12-19 Verfahren zur Herstellung von Selengleichrichterplatten Pending DE1963738A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19691963738 DE1963738A1 (de) 1969-12-19 1969-12-19 Verfahren zur Herstellung von Selengleichrichterplatten
GB5860170A GB1331074A (en) 1969-12-19 1970-12-10 Manufacture of selenium rectifier plates
SE16964/70A SE356166B (enExample) 1969-12-19 1970-12-15
ES387300A ES387300A1 (es) 1969-12-19 1970-12-17 Procedimiento para la fabricacion de placas rectificadoras de selenio.
FR7045723A FR2073483B1 (enExample) 1969-12-19 1970-12-18
ES1973191965U ES191965Y (es) 1969-12-19 1973-05-29 Placa rectificadora de selenio.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691963738 DE1963738A1 (de) 1969-12-19 1969-12-19 Verfahren zur Herstellung von Selengleichrichterplatten

Publications (1)

Publication Number Publication Date
DE1963738A1 true DE1963738A1 (de) 1971-06-24

Family

ID=5754393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691963738 Pending DE1963738A1 (de) 1969-12-19 1969-12-19 Verfahren zur Herstellung von Selengleichrichterplatten

Country Status (5)

Country Link
DE (1) DE1963738A1 (enExample)
ES (2) ES387300A1 (enExample)
FR (1) FR2073483B1 (enExample)
GB (1) GB1331074A (enExample)
SE (1) SE356166B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2302866A1 (de) * 1972-01-22 1973-08-02 Yamanouchi Pharma Co Ltd Neue 1-substituierte-1,4-dihydropyridinderivate
DE3942884A1 (de) * 1989-12-23 1991-06-27 Sitec Gmbh Sicherheitseinricht Trommelschleuse

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060053B (de) * 1953-02-10 1959-06-25 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern mit einem mehrschichtigen Halbleiter mit verschiedenem Gehalt an Halogen und elektropositiven Zusaetzen in den einzelnen Schichten
BE561533A (enExample) * 1954-11-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2302866A1 (de) * 1972-01-22 1973-08-02 Yamanouchi Pharma Co Ltd Neue 1-substituierte-1,4-dihydropyridinderivate
DE3942884A1 (de) * 1989-12-23 1991-06-27 Sitec Gmbh Sicherheitseinricht Trommelschleuse

Also Published As

Publication number Publication date
ES191965Y (es) 1975-01-01
SE356166B (enExample) 1973-05-14
GB1331074A (en) 1973-09-19
FR2073483A1 (enExample) 1971-10-01
ES387300A1 (es) 1973-11-16
FR2073483B1 (enExample) 1976-05-28
ES191965U (es) 1974-09-01

Similar Documents

Publication Publication Date Title
DE68909090T2 (de) Diffusionsbarrierenstruktur für eine Halbleitervorrichtung.
DE977615C (de) Verfahren zur Herstellung eines fuer Signaluebertragungsvorrichtungen bestimmten Halbleiterelements
DE69102851T2 (de) Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses.
DE2647566B2 (de) Leiterstreifenstruktur, ihre Verwendung und Herstellung
DE2052323B2 (de) Verfahren zur Herstellung eines Supraleiters
DE1056746B (de) Verfahren zur Herstellung von Selengleichrichtern
DE2228678A1 (de) Verfahren zum herstellen einer schicht aus leiterzugmaterial fuer halbleiterbauteile
DE2041497A1 (de) Halbleiterelement und Verfahren zur Herstellung desselben
DE1214786B (de) Elektrischer Kondenstator und Verfahren zu seiner Herstellung
DE1789021C3 (de) Zenerdiode und Verfahren zu ihrer Herstellung
DE102012215041A1 (de) Verfahren zur Herstellung eines Halbleiterelementes eines direktkonvertierenden Röntgendetektors
DE1614148B2 (de) Verfahren zum herstellen einer elektrode fuer halbleiter bauelemente
DE2217737A1 (de) Verfahren zum Herstellen eines elektrischen Leitungssystems
DE3217026A1 (de) Halbleitervorrichtung
DE1464604A1 (de) Halbleitervorrichtung
EP0037005A1 (de) Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung
DE2654476C3 (de) Verfahren zur Herstellung einer Schottky-Sperrschicht
CH672318A5 (enExample)
DE3419225A1 (de) Gaas-halbleitervorrichtung
DE919360C (de) Selen-Gleichrichter mit Tellur und Verfahren zu seiner Herstellung
DE1963738A1 (de) Verfahren zur Herstellung von Selengleichrichterplatten
DE2141718A1 (de) Verfahren zum Herstellen elektri scher Kontakte auf der Oberflache eines Halbleiterbauteils
DE1170082B (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE1816748B2 (de) Halbleiteranordnung und verfahren zu ihrer herstellung
DE2230252A1 (de) Verfahren zur herstellung eines supraleiters und anwendung des verfahrens