DE1924620A1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE1924620A1
DE1924620A1 DE19691924620 DE1924620A DE1924620A1 DE 1924620 A1 DE1924620 A1 DE 1924620A1 DE 19691924620 DE19691924620 DE 19691924620 DE 1924620 A DE1924620 A DE 1924620A DE 1924620 A1 DE1924620 A1 DE 1924620A1
Authority
DE
Germany
Prior art keywords
zones
insulating layer
semiconductor body
impurity
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691924620
Other languages
German (de)
English (en)
Inventor
Else Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1924620A1 publication Critical patent/DE1924620A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19691924620 1968-05-23 1969-05-14 Feldeffekttransistor Pending DE1924620A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6807317A NL6807317A (enExample) 1968-05-23 1968-05-23

Publications (1)

Publication Number Publication Date
DE1924620A1 true DE1924620A1 (de) 1969-11-27

Family

ID=19803718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691924620 Pending DE1924620A1 (de) 1968-05-23 1969-05-14 Feldeffekttransistor

Country Status (6)

Country Link
US (1) US3576477A (enExample)
BE (1) BE733495A (enExample)
CH (1) CH489914A (enExample)
DE (1) DE1924620A1 (enExample)
FR (1) FR2009170B1 (enExample)
NL (1) NL6807317A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2419019A1 (de) * 1973-04-20 1974-10-31 Matsushita Electronics Corp Verfahren zum herstellen eines sperrschichtfeldeffekttransistors

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (enExample) * 1951-08-02
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US6200843B1 (en) 1998-09-24 2001-03-13 International Business Machines Corporation High-voltage, high performance FETs

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1351622A (fr) * 1962-01-19 1964-02-07 Rca Corp Dispositifs semi-conducteurs et leur procédé de fabrication
FR1373247A (fr) * 1962-09-07 1964-09-25 Rca Corp Dispositif semiconducteur et procédé pour la fabrication de ce dispositif
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate
US3386016A (en) * 1965-08-02 1968-05-28 Sprague Electric Co Field effect transistor with an induced p-type channel by means of high work function metal or oxide
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3428875A (en) * 1966-10-03 1969-02-18 Fairchild Camera Instr Co Variable threshold insulated gate field effect device
FR1530926A (fr) * 1966-10-13 1968-06-28 Rca Corp Procédé pour la fabrication de dispositifs à effet de champ à électrodes de commande isolées

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2419019A1 (de) * 1973-04-20 1974-10-31 Matsushita Electronics Corp Verfahren zum herstellen eines sperrschichtfeldeffekttransistors

Also Published As

Publication number Publication date
NL6807317A (enExample) 1969-11-25
FR2009170B1 (enExample) 1973-12-21
CH489914A (de) 1970-04-30
BE733495A (enExample) 1969-11-24
FR2009170A1 (enExample) 1970-01-30
US3576477A (en) 1971-04-27

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