DE1915549C3 - Verfahren zum epitaktischen Aufwachsen von Siliciumcarbidschichten - Google Patents
Verfahren zum epitaktischen Aufwachsen von SiliciumcarbidschichtenInfo
- Publication number
- DE1915549C3 DE1915549C3 DE1915549A DE1915549A DE1915549C3 DE 1915549 C3 DE1915549 C3 DE 1915549C3 DE 1915549 A DE1915549 A DE 1915549A DE 1915549 A DE1915549 A DE 1915549A DE 1915549 C3 DE1915549 C3 DE 1915549C3
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- source
- sic
- growth
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 35
- 230000008569 process Effects 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/079—Inert carrier gas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/932—Boron nitride semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71692868A | 1968-03-28 | 1968-03-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1915549A1 DE1915549A1 (de) | 1969-10-09 |
| DE1915549B2 DE1915549B2 (de) | 1976-03-04 |
| DE1915549C3 true DE1915549C3 (de) | 1978-03-30 |
Family
ID=24880023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1915549A Expired DE1915549C3 (de) | 1968-03-28 | 1969-03-27 | Verfahren zum epitaktischen Aufwachsen von Siliciumcarbidschichten |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3577285A (enExample) |
| DE (1) | DE1915549C3 (enExample) |
| FR (1) | FR1603891A (enExample) |
| GB (1) | GB1214272A (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6919053A (enExample) * | 1969-12-19 | 1971-06-22 | ||
| SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
| US3911188A (en) * | 1973-07-09 | 1975-10-07 | Norton Co | High strength composite ceramic structure |
| JPS50120966A (enExample) * | 1974-03-07 | 1975-09-22 | ||
| FR2334202A1 (fr) * | 1975-12-01 | 1977-07-01 | Gnii Pi Redkometa | Procede de preparation de structures a semi-conducteurs mesa et tridimensionnelles a heterogeneite locale de composition et dispositif pour la realisation de ce procede |
| US4147572A (en) * | 1976-10-18 | 1979-04-03 | Vodakov Jury A | Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique |
| US4095331A (en) * | 1976-11-04 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | Fabrication of an epitaxial layer diode in aluminum nitride on sapphire |
| US4152182A (en) * | 1978-05-15 | 1979-05-01 | International Business Machines Corporation | Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
| US4415609A (en) * | 1980-07-30 | 1983-11-15 | Avco Corporation | Method of applying a carbon-rich surface layer to a silicon carbide filament |
| US4340636A (en) * | 1980-07-30 | 1982-07-20 | Avco Corporation | Coated stoichiometric silicon carbide |
| US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
| JPS61243000A (ja) * | 1985-04-18 | 1986-10-29 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| JPS61291494A (ja) * | 1985-06-19 | 1986-12-22 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| CA1313571C (en) * | 1987-10-26 | 1993-02-09 | John W. Palmour | Metal oxide semiconductor field-effect transistor formed in silicon carbide |
| JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
| US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
| US5082695A (en) * | 1988-03-08 | 1992-01-21 | 501 Fujitsu Limited | Method of fabricating an x-ray exposure mask |
| US5006914A (en) * | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
| JP3263288B2 (ja) * | 1995-09-13 | 2002-03-04 | 株式会社東芝 | 半導体装置 |
| JP3651160B2 (ja) * | 1997-01-31 | 2005-05-25 | ソニー株式会社 | 半導体装置の製造方法 |
| CN1276999C (zh) * | 1998-07-13 | 2006-09-27 | Si晶体股份公司 | SiC单晶的培育方法 |
| JP5219230B1 (ja) * | 2012-09-04 | 2013-06-26 | エルシード株式会社 | ＳｉＣ蛍光材料及びその製造方法並びに発光素子 |
| CN113774494B (zh) * | 2021-11-15 | 2022-03-29 | 浙江大学杭州国际科创中心 | 一种半绝缘型碳化硅单晶片剥离方法及剥离装置 |
| CN114150382B (zh) * | 2021-12-08 | 2022-11-22 | 浙江大学杭州国际科创中心 | 一种基于光刻蚀的n型碳化硅单晶片剥离方法及剥离装置 |
-
1968
- 1968-03-28 US US716928A patent/US3577285A/en not_active Expired - Lifetime
- 1968-12-30 FR FR1603891D patent/FR1603891A/fr not_active Expired
-
1969
- 1969-02-28 GB GB00805/69A patent/GB1214272A/en not_active Expired
- 1969-03-27 DE DE1915549A patent/DE1915549C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1915549B2 (de) | 1976-03-04 |
| GB1214272A (en) | 1970-12-02 |
| FR1603891A (enExample) | 1971-06-07 |
| DE1915549A1 (de) | 1969-10-09 |
| US3577285A (en) | 1971-05-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |