GB1214272A - A process of preparing crystalline materials - Google Patents

A process of preparing crystalline materials

Info

Publication number
GB1214272A
GB1214272A GB00805/69A GB1080569A GB1214272A GB 1214272 A GB1214272 A GB 1214272A GB 00805/69 A GB00805/69 A GB 00805/69A GB 1080569 A GB1080569 A GB 1080569A GB 1214272 A GB1214272 A GB 1214272A
Authority
GB
United Kingdom
Prior art keywords
substrate
source
deposition
pattern
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00805/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1214272A publication Critical patent/GB1214272A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/079—Inert carrier gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB00805/69A 1968-03-28 1969-02-28 A process of preparing crystalline materials Expired GB1214272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71692868A 1968-03-28 1968-03-28

Publications (1)

Publication Number Publication Date
GB1214272A true GB1214272A (en) 1970-12-02

Family

ID=24880023

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00805/69A Expired GB1214272A (en) 1968-03-28 1969-02-28 A process of preparing crystalline materials

Country Status (4)

Country Link
US (1) US3577285A (enExample)
DE (1) DE1915549C3 (enExample)
FR (1) FR1603891A (enExample)
GB (1) GB1214272A (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6919053A (enExample) * 1969-12-19 1971-06-22
SU438364A1 (ru) * 1972-09-15 1976-07-05 В. И. Павличенко Диодный источник света на карбтде кремни
US3911188A (en) * 1973-07-09 1975-10-07 Norton Co High strength composite ceramic structure
JPS50120966A (enExample) * 1974-03-07 1975-09-22
FR2334202A1 (fr) * 1975-12-01 1977-07-01 Gnii Pi Redkometa Procede de preparation de structures a semi-conducteurs mesa et tridimensionnelles a heterogeneite locale de composition et dispositif pour la realisation de ce procede
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4340636A (en) * 1980-07-30 1982-07-20 Avco Corporation Coated stoichiometric silicon carbide
US4415609A (en) * 1980-07-30 1983-11-15 Avco Corporation Method of applying a carbon-rich surface layer to a silicon carbide filament
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JPS61243000A (ja) * 1985-04-18 1986-10-29 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
CA1313571C (en) * 1987-10-26 1993-02-09 John W. Palmour Metal oxide semiconductor field-effect transistor formed in silicon carbide
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
JP3263288B2 (ja) * 1995-09-13 2002-03-04 株式会社東芝 半導体装置
JP3651160B2 (ja) * 1997-01-31 2005-05-25 ソニー株式会社 半導体装置の製造方法
CN1276999C (zh) * 1998-07-13 2006-09-27 Si晶体股份公司 SiC单晶的培育方法
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN113774494B (zh) * 2021-11-15 2022-03-29 浙江大学杭州国际科创中心 一种半绝缘型碳化硅单晶片剥离方法及剥离装置
CN114150382B (zh) * 2021-12-08 2022-11-22 浙江大学杭州国际科创中心 一种基于光刻蚀的n型碳化硅单晶片剥离方法及剥离装置

Also Published As

Publication number Publication date
DE1915549C3 (de) 1978-03-30
DE1915549B2 (de) 1976-03-04
FR1603891A (enExample) 1971-06-07
US3577285A (en) 1971-05-04
DE1915549A1 (de) 1969-10-09

Similar Documents

Publication Publication Date Title
GB1214272A (en) A process of preparing crystalline materials
DE69105537D1 (de) Polykristallines CVD-Diamantsubstrat für epitaktisches Aufwachsen von Einkristallhalbleitern.
GB996287A (en) Methods of producing thin films of semiconductor materials
TW325601B (en) Process of manufacturing thin film semiconductor
GB1381809A (en) Methods of forming an epitaxial layer upon a substrate
US2898248A (en) Method of fabricating germanium bodies
GB1062968A (en) Process for epitaxial crystal growth
GB1019078A (en) Process for the production of a semiconductor assembly
GB808580A (en) Improvements in or relating to an element having a semi-conductor and a method of producing the same
GB942517A (en) A process for the production of a thin layer of a semiconducting compound
GB929559A (en) Method of growing epitaxial semiconductor layers
GB1255576A (en) Improvements in or relating to the production of epitaxially grown layers of semiconductor material
GB1194017A (en) Improvements in and relating to Methods of Manufacturing Semiconductor Devices
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
US3396059A (en) Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method
US4614672A (en) Liquid phase epitaxy (LPE) of silicon carbide
JPS5271171A (en) Production of epitaxial wafer
GB860502A (en) Light filter and method of production
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
GB1468106A (en) Method and apparatus for crystal growth
GB1053406A (enExample)
SU375822A1 (ru) Способ изготовления фотошаблонов
GB1007555A (en) Semiconductor material
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS55149193A (en) Manufacture of silicon carbide substrate

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee