DE1810472B2 - - Google Patents

Info

Publication number
DE1810472B2
DE1810472B2 DE19681810472 DE1810472A DE1810472B2 DE 1810472 B2 DE1810472 B2 DE 1810472B2 DE 19681810472 DE19681810472 DE 19681810472 DE 1810472 A DE1810472 A DE 1810472A DE 1810472 B2 DE1810472 B2 DE 1810472B2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681810472
Other languages
German (de)
Other versions
DE1810472A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1810472A1 publication Critical patent/DE1810472A1/de
Publication of DE1810472B2 publication Critical patent/DE1810472B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5522—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
DE19681810472 1967-11-24 1968-11-22 Lichtemittierende Dioden aus Siliciumcarbid Pending DE1810472A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68544767A 1967-11-24 1967-11-24
US81504769A 1969-04-10 1969-04-10

Publications (2)

Publication Number Publication Date
DE1810472A1 DE1810472A1 (de) 1970-03-26
DE1810472B2 true DE1810472B2 (enExample) 1970-12-10

Family

ID=27103593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681810472 Pending DE1810472A1 (de) 1967-11-24 1968-11-22 Lichtemittierende Dioden aus Siliciumcarbid

Country Status (4)

Country Link
US (2) US3458779A (enExample)
DE (1) DE1810472A1 (enExample)
FR (1) FR1592851A (enExample)
GB (1) GB1201428A (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510732A (en) * 1968-04-22 1970-05-05 Gen Electric Solid state lamp having a lens with rhodamine or fluorescent material dispersed therein
US3562609A (en) * 1968-06-04 1971-02-09 Gen Electric Solid state lamp utilizing emission from edge of a p-n junction
US3565703A (en) * 1969-07-09 1971-02-23 Norton Research Corp Silicon carbide junction diode
US3611064A (en) * 1969-07-14 1971-10-05 Gen Electric Ohmic contact to n-type silicon carbide, comprising nickel-titanium-gold
US3805347A (en) * 1969-12-29 1974-04-23 Gen Electric Solid state lamp construction
US3638026A (en) * 1970-06-29 1972-01-25 Honeywell Inc Or photovoltaic device
US3715636A (en) * 1972-01-03 1973-02-06 Gen Electric Silicon carbide lamp mounted on a ceramic of poor thermal conductivity
US3832668A (en) * 1972-03-31 1974-08-27 Westinghouse Electric Corp Silicon carbide junction thermistor
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing
FR2210073A1 (en) * 1972-12-13 1974-07-05 Maslakovets Jury Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation
JPS5310862Y2 (enExample) * 1972-12-28 1978-03-23
JPS49113577A (enExample) * 1973-02-08 1974-10-30
US3986193A (en) * 1973-02-08 1976-10-12 Jury Alexandrovich Vodakov Semiconductor SiCl light source and a method of manufacturing same
US3836759A (en) * 1973-08-20 1974-09-17 S Silverman Safety light circuit
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US3942065A (en) * 1974-11-11 1976-03-02 Motorola, Inc. Monolithic, milticolor, light emitting diode display device
US4176294A (en) * 1975-10-03 1979-11-27 Westinghouse Electric Corp. Method and device for efficiently generating white light with good rendition of illuminated objects
DE2730130C2 (de) * 1976-09-14 1987-11-12 Mitsubishi Denki K.K., Tokyo Verfahren zum Herstellen von Halbleiterbauelementen
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
USD278048S (en) 1981-10-30 1985-03-19 Stanley Electric Co., Ltd. Light-emitting diode semiconductor chip with leads
USD278049S (en) 1981-10-30 1985-03-19 Stanley Electric Co., Ltd. Light-emitting diode semiconductor chip with leads
USD277955S (en) 1981-10-30 1985-03-12 Stanley Electric Co., Ltd. Light-emitting diode semiconductor chip with leads
US4556436A (en) * 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5030583A (en) * 1988-12-02 1991-07-09 Advanced Technolgy Materials, Inc. Method of making single crystal semiconductor substrate articles and semiconductor device
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5726463A (en) * 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
SE9500146D0 (sv) * 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
EP0890184B1 (en) * 1996-03-27 2009-07-08 Cree, Inc. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC
JP2002515181A (ja) * 1996-06-05 2002-05-21 サーノフ コーポレイション 発光半導体装置
US6204160B1 (en) 1999-02-22 2001-03-20 The United States Of America As Represented By The Secretary Of The Navy Method for making electrical contacts and junctions in silicon carbide
KR100375848B1 (ko) * 1999-03-19 2003-03-15 가부시끼가이샤 도시바 전계방출소자의 제조방법 및 디스플레이 장치
US20070188717A1 (en) * 2006-02-14 2007-08-16 Melcher Charles L Method for producing crystal elements having strategically oriented faces for enhancing performance
US8115229B2 (en) * 2009-03-19 2012-02-14 Cid Technologies Llc Arrangement for dissipating thermal energy generated by a light emitting diode
USD877707S1 (en) 2017-03-30 2020-03-10 Mitsubishi Electric Corporation Semiconductor package
JP7058337B2 (ja) 2018-02-28 2022-04-21 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト Ａｌ／Ｂｅ共注入により炭化ケイ素をｐ型ドーピングする方法
CN217382611U (zh) * 2022-06-01 2022-09-06 江西奥赛光电有限公司 直插式点控灯及灯串结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3236780A (en) * 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
GB1052587A (enExample) * 1964-06-30
US3377210A (en) * 1965-03-25 1968-04-09 Norton Co Process of forming silicon carbide diode by growing separate p and n layers together
US3389022A (en) * 1965-09-17 1968-06-18 United Aircraft Corp Method for producing silicon carbide layers on silicon substrates

Also Published As

Publication number Publication date
US3458779A (en) 1969-07-29
FR1592851A (enExample) 1970-05-19
GB1201428A (en) 1970-08-05
DE1810472A1 (de) 1970-03-26
US3636397A (en) 1972-01-18

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