FR1592851A - - Google Patents

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Publication number
FR1592851A
FR1592851A FR1592851DA FR1592851A FR 1592851 A FR1592851 A FR 1592851A FR 1592851D A FR1592851D A FR 1592851DA FR 1592851 A FR1592851 A FR 1592851A
Authority
FR
France
Prior art keywords
sic
layer
charge
crystals
concentrations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
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English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1592851A publication Critical patent/FR1592851A/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/343—Materials of the light emitting region containing only elements of group IV of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
FR1592851D 1967-11-24 1968-11-22 Expired FR1592851A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68544767A 1967-11-24 1967-11-24
US81504769A 1969-04-10 1969-04-10

Publications (1)

Publication Number Publication Date
FR1592851A true FR1592851A (fr) 1970-05-19

Family

ID=27103593

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1592851D Expired FR1592851A (fr) 1967-11-24 1968-11-22

Country Status (4)

Country Link
US (2) US3458779A (fr)
DE (1) DE1810472A1 (fr)
FR (1) FR1592851A (fr)
GB (1) GB1201428A (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510732A (en) * 1968-04-22 1970-05-05 Gen Electric Solid state lamp having a lens with rhodamine or fluorescent material dispersed therein
US3562609A (en) * 1968-06-04 1971-02-09 Gen Electric Solid state lamp utilizing emission from edge of a p-n junction
US3565703A (en) * 1969-07-09 1971-02-23 Norton Research Corp Silicon carbide junction diode
US3611064A (en) * 1969-07-14 1971-10-05 Gen Electric Ohmic contact to n-type silicon carbide, comprising nickel-titanium-gold
US3805347A (en) * 1969-12-29 1974-04-23 Gen Electric Solid state lamp construction
US3638026A (en) * 1970-06-29 1972-01-25 Honeywell Inc Or photovoltaic device
US3715636A (en) * 1972-01-03 1973-02-06 Gen Electric Silicon carbide lamp mounted on a ceramic of poor thermal conductivity
US3832668A (en) * 1972-03-31 1974-08-27 Westinghouse Electric Corp Silicon carbide junction thermistor
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing
FR2210073A1 (en) * 1972-12-13 1974-07-05 Maslakovets Jury Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation
JPS5310862Y2 (fr) * 1972-12-28 1978-03-23
US3986193A (en) * 1973-02-08 1976-10-12 Jury Alexandrovich Vodakov Semiconductor SiCl light source and a method of manufacturing same
JPS49113577A (fr) * 1973-02-08 1974-10-30
US3836759A (en) * 1973-08-20 1974-09-17 S Silverman Safety light circuit
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US3942065A (en) * 1974-11-11 1976-03-02 Motorola, Inc. Monolithic, milticolor, light emitting diode display device
US4176294A (en) * 1975-10-03 1979-11-27 Westinghouse Electric Corp. Method and device for efficiently generating white light with good rendition of illuminated objects
DE2730130C2 (de) * 1976-09-14 1987-11-12 Mitsubishi Denki K.K., Tokyo Verfahren zum Herstellen von Halbleiterbauelementen
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
US4556436A (en) * 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5030583A (en) * 1988-12-02 1991-07-09 Advanced Technolgy Materials, Inc. Method of making single crystal semiconductor substrate articles and semiconductor device
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5726463A (en) * 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
SE9500146D0 (sv) * 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
EP0890184B1 (fr) * 1996-03-27 2009-07-08 Cree, Inc. PROCEDE DE FABRICATION D'UN COMPOSANT A SEMI-CONDUCTEUR POSSEDANT UNE COUCHE DE SEMI-CONDUCTEUR EN SiC ET
EP0902978A4 (fr) * 1996-06-05 2000-02-23 Sarnoff Corp Dispositif a semi-conducteurs a emission de lumiere
US6204160B1 (en) 1999-02-22 2001-03-20 The United States Of America As Represented By The Secretary Of The Navy Method for making electrical contacts and junctions in silicon carbide
KR100375848B1 (ko) * 1999-03-19 2003-03-15 가부시끼가이샤 도시바 전계방출소자의 제조방법 및 디스플레이 장치
US20070188717A1 (en) * 2006-02-14 2007-08-16 Melcher Charles L Method for producing crystal elements having strategically oriented faces for enhancing performance
US8115229B2 (en) * 2009-03-19 2012-02-14 Cid Technologies Llc Arrangement for dissipating thermal energy generated by a light emitting diode
USD877707S1 (en) * 2017-03-30 2020-03-10 Mitsubishi Electric Corporation Semiconductor package
EP3602609B1 (fr) * 2018-02-28 2020-04-29 ABB Power Grids Switzerland AG Procédé de dopage de type p du carbure de silicium par co-implantation al/be
CN217382611U (zh) * 2022-06-01 2022-09-06 江西奥赛光电有限公司 直插式点控灯及灯串结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3236780A (en) * 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
GB1052587A (fr) * 1964-06-30
US3377210A (en) * 1965-03-25 1968-04-09 Norton Co Process of forming silicon carbide diode by growing separate p and n layers together
US3389022A (en) * 1965-09-17 1968-06-18 United Aircraft Corp Method for producing silicon carbide layers on silicon substrates

Also Published As

Publication number Publication date
GB1201428A (en) 1970-08-05
US3636397A (en) 1972-01-18
US3458779A (en) 1969-07-29
DE1810472B2 (fr) 1970-12-10
DE1810472A1 (de) 1970-03-26

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