FR2210073A1 - Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation - Google Patents

Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Info

Publication number
FR2210073A1
FR2210073A1 FR7244323A FR7244323A FR2210073A1 FR 2210073 A1 FR2210073 A1 FR 2210073A1 FR 7244323 A FR7244323 A FR 7244323A FR 7244323 A FR7244323 A FR 7244323A FR 2210073 A1 FR2210073 A1 FR 2210073A1
Authority
FR
France
Prior art keywords
light source
sic
semiconductor light
doped
acceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7244323A
Other languages
French (fr)
Other versions
FR2210073B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MASLAKOVETS JURY
Original Assignee
MASLAKOVETS JURY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MASLAKOVETS JURY filed Critical MASLAKOVETS JURY
Priority to FR7244323A priority Critical patent/FR2210073A1/en
Publication of FR2210073A1 publication Critical patent/FR2210073A1/en
Application granted granted Critical
Publication of FR2210073B1 publication Critical patent/FR2210073B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/343—Materials of the light emitting region containing only elements of group IV of the periodic system characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)

Abstract

Semiconductor light source on n-conducting, N-doped SiC contains a pn-transition emitting visible light and a p-layer doped with an acceptor material. The SiC has a concn. of uncompensated majority donors of 0.8 x 1018 cm.-3. The structure of the element comprises: (a) a p-layer doped by acceptor additive with min. activation energy and solubility in the SiC of the order of 2 x 1018 to 2 x 1020 cm.-3; (b) a base layer with a concn. of uncompensated donors of 0.8 x 1018 to 5 x 1018 cm.-3; and (c) A 0.05-1.0 mu m thick intermediate layer doped with luminescence-stimulating additives of the donor and acceptor type up to concns. of 0.1 x 1018 to 2 x 1020 cm.-3. and with a specific resistance is not 103 greater than that of the base layer. This light source is suitable for visual information displays, recording on photosensitive media, recording and read-out of data in computer technology, in various display panels, in digital meters etc. It operates efficiently at high current density and there is a much lower increase in the potential difference in the pass direction and redn. in the radiation intensity when the temp. is reduced from ambient to -60 degrees C. or under.
FR7244323A 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation Granted FR2210073A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7244323A FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7244323A FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Publications (2)

Publication Number Publication Date
FR2210073A1 true FR2210073A1 (en) 1974-07-05
FR2210073B1 FR2210073B1 (en) 1976-08-20

Family

ID=9108616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7244323A Granted FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Country Status (1)

Country Link
FR (1) FR2210073A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
FR1602599A (en) * 1968-10-10 1970-12-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
FR1602599A (en) * 1968-10-10 1970-12-28

Also Published As

Publication number Publication date
FR2210073B1 (en) 1976-08-20

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Legal Events

Date Code Title Description
ST Notification of lapse