DE1802350C3 - Elektrolumineszente Halbleiterdiode - Google Patents
Elektrolumineszente HalbleiterdiodeInfo
- Publication number
- DE1802350C3 DE1802350C3 DE1802350A DE1802350A DE1802350C3 DE 1802350 C3 DE1802350 C3 DE 1802350C3 DE 1802350 A DE1802350 A DE 1802350A DE 1802350 A DE1802350 A DE 1802350A DE 1802350 C3 DE1802350 C3 DE 1802350C3
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- semiconductor diode
- electroluminescent semiconductor
- atoms
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 229910005540 GaP Inorganic materials 0.000 description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005221 zone crystallization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
- H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
Landscapes
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1802350A DE1802350C3 (de) | 1968-10-10 | 1968-10-10 | Elektrolumineszente Halbleiterdiode |
| GB57327/68A GB1253987A (en) | 1968-10-10 | 1968-12-03 | Semiconductor diode-type source of nanosecond light pulses |
| FR182082A FR1602599A (enrdf_load_stackoverflow) | 1968-10-10 | 1968-12-30 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1802350A DE1802350C3 (de) | 1968-10-10 | 1968-10-10 | Elektrolumineszente Halbleiterdiode |
| GB57327/68A GB1253987A (en) | 1968-10-10 | 1968-12-03 | Semiconductor diode-type source of nanosecond light pulses |
| FR182082 | 1968-12-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1802350A1 DE1802350A1 (de) | 1971-02-11 |
| DE1802350B2 DE1802350B2 (de) | 1973-06-28 |
| DE1802350C3 true DE1802350C3 (de) | 1974-01-24 |
Family
ID=27181530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1802350A Expired DE1802350C3 (de) | 1968-10-10 | 1968-10-10 | Elektrolumineszente Halbleiterdiode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1802350C3 (enrdf_load_stackoverflow) |
| FR (1) | FR1602599A (enrdf_load_stackoverflow) |
| GB (1) | GB1253987A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1423037A (en) * | 1972-02-08 | 1976-01-28 | Efimov V M | Silicon carbide |
| SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
| FR2210073A1 (en) * | 1972-12-13 | 1974-07-05 | Maslakovets Jury | Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation |
-
1968
- 1968-10-10 DE DE1802350A patent/DE1802350C3/de not_active Expired
- 1968-12-03 GB GB57327/68A patent/GB1253987A/en not_active Expired
- 1968-12-30 FR FR182082A patent/FR1602599A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1802350A1 (de) | 1971-02-11 |
| DE1802350B2 (de) | 1973-06-28 |
| FR1602599A (enrdf_load_stackoverflow) | 1970-12-28 |
| GB1253987A (en) | 1971-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |