GB1253987A - Semiconductor diode-type source of nanosecond light pulses - Google Patents
Semiconductor diode-type source of nanosecond light pulsesInfo
- Publication number
- GB1253987A GB1253987A GB57327/68A GB5732768A GB1253987A GB 1253987 A GB1253987 A GB 1253987A GB 57327/68 A GB57327/68 A GB 57327/68A GB 5732768 A GB5732768 A GB 5732768A GB 1253987 A GB1253987 A GB 1253987A
- Authority
- GB
- United Kingdom
- Prior art keywords
- atom
- concentration
- crystal
- diode
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000370 acceptor Substances 0.000 abstract 2
- 239000012190 activator Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
- H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
Landscapes
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1802350A DE1802350C3 (de) | 1968-10-10 | 1968-10-10 | Elektrolumineszente Halbleiterdiode |
GB57327/68A GB1253987A (en) | 1968-10-10 | 1968-12-03 | Semiconductor diode-type source of nanosecond light pulses |
FR182082A FR1602599A (enrdf_load_stackoverflow) | 1968-10-10 | 1968-12-30 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1802350A DE1802350C3 (de) | 1968-10-10 | 1968-10-10 | Elektrolumineszente Halbleiterdiode |
GB57327/68A GB1253987A (en) | 1968-10-10 | 1968-12-03 | Semiconductor diode-type source of nanosecond light pulses |
FR182082 | 1968-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1253987A true GB1253987A (en) | 1971-11-17 |
Family
ID=27181530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB57327/68A Expired GB1253987A (en) | 1968-10-10 | 1968-12-03 | Semiconductor diode-type source of nanosecond light pulses |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1802350C3 (enrdf_load_stackoverflow) |
FR (1) | FR1602599A (enrdf_load_stackoverflow) |
GB (1) | GB1253987A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1423037A (en) * | 1972-02-08 | 1976-01-28 | Efimov V M | Silicon carbide |
SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
FR2210073A1 (en) * | 1972-12-13 | 1974-07-05 | Maslakovets Jury | Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation |
-
1968
- 1968-10-10 DE DE1802350A patent/DE1802350C3/de not_active Expired
- 1968-12-03 GB GB57327/68A patent/GB1253987A/en not_active Expired
- 1968-12-30 FR FR182082A patent/FR1602599A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1802350B2 (de) | 1973-06-28 |
FR1602599A (enrdf_load_stackoverflow) | 1970-12-28 |
DE1802350A1 (de) | 1971-02-11 |
DE1802350C3 (de) | 1974-01-24 |
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