GB1253987A - Semiconductor diode-type source of nanosecond light pulses - Google Patents

Semiconductor diode-type source of nanosecond light pulses

Info

Publication number
GB1253987A
GB1253987A GB57327/68A GB5732768A GB1253987A GB 1253987 A GB1253987 A GB 1253987A GB 57327/68 A GB57327/68 A GB 57327/68A GB 5732768 A GB5732768 A GB 5732768A GB 1253987 A GB1253987 A GB 1253987A
Authority
GB
United Kingdom
Prior art keywords
atom
concentration
crystal
diode
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB57327/68A
Other languages
English (en)
Inventor
Tatiana Georgievna Kmita
Igor Veniaminovich Ryzhikov
Vladimir Ivanovich Rykalin
Vadim Ivanovich Pavlichenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE1802350A priority Critical patent/DE1802350C3/de
Application filed by Individual filed Critical Individual
Priority to GB57327/68A priority patent/GB1253987A/en
Priority to FR182082A priority patent/FR1602599A/fr
Publication of GB1253987A publication Critical patent/GB1253987A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/826Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8262Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants

Landscapes

  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
GB57327/68A 1968-10-10 1968-12-03 Semiconductor diode-type source of nanosecond light pulses Expired GB1253987A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE1802350A DE1802350C3 (de) 1968-10-10 1968-10-10 Elektrolumineszente Halbleiterdiode
GB57327/68A GB1253987A (en) 1968-10-10 1968-12-03 Semiconductor diode-type source of nanosecond light pulses
FR182082A FR1602599A (enrdf_load_stackoverflow) 1968-10-10 1968-12-30

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1802350A DE1802350C3 (de) 1968-10-10 1968-10-10 Elektrolumineszente Halbleiterdiode
GB57327/68A GB1253987A (en) 1968-10-10 1968-12-03 Semiconductor diode-type source of nanosecond light pulses
FR182082 1968-12-30

Publications (1)

Publication Number Publication Date
GB1253987A true GB1253987A (en) 1971-11-17

Family

ID=27181530

Family Applications (1)

Application Number Title Priority Date Filing Date
GB57327/68A Expired GB1253987A (en) 1968-10-10 1968-12-03 Semiconductor diode-type source of nanosecond light pulses

Country Status (3)

Country Link
DE (1) DE1802350C3 (enrdf_load_stackoverflow)
FR (1) FR1602599A (enrdf_load_stackoverflow)
GB (1) GB1253987A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423037A (en) * 1972-02-08 1976-01-28 Efimov V M Silicon carbide
SU438364A1 (ru) * 1972-09-15 1976-07-05 В. И. Павличенко Диодный источник света на карбтде кремни
FR2210073A1 (en) * 1972-12-13 1974-07-05 Maslakovets Jury Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Also Published As

Publication number Publication date
DE1802350B2 (de) 1973-06-28
FR1602599A (enrdf_load_stackoverflow) 1970-12-28
DE1802350A1 (de) 1971-02-11
DE1802350C3 (de) 1974-01-24

Similar Documents

Publication Publication Date Title
GB1459455A (en) Electroluminescent devices
GB1253987A (en) Semiconductor diode-type source of nanosecond light pulses
GB1294897A (enrdf_load_stackoverflow)
GB1424913A (en) Thermoeelectric generators having partitioned self-segmenting thermoelectric legs
GB1288294A (enrdf_load_stackoverflow)
JPS512393A (enrdf_load_stackoverflow)
GB1242660A (en) Improvements in or relating to luminescence diodes
Stringfellow et al. Green-emitting diodes in vapor phase epitaxial GaP
ES354654A1 (es) Metodo para la difusion de cinc en arseniuro de gelio.
GB1482424A (en) Electro-luminescent semiconductor diodes
GB1174597A (en) Radiation Generators including Semiconductive Bodies
Ren et al. Blue (ZnSe) and green (ZnSe0. 9Te0. 1) light emitting diodes
Adams et al. Optically triggerable domains in GaAs gunn diodes
GB1228717A (enrdf_load_stackoverflow)
Dingle et al. RADIATIVE LIFETIMES IN n‐TYPE GALLIUM ARSENIDE
GB1354802A (en) Schotky barrier diode
Allen et al. Breakdown and Light Emission in Gallium Phosphide Diodes
Saul Effect of growth temperature on oxygen incorporation in GaP
GB1477524A (en) Red light-emitting gallium phosphide device
Göbel et al. Doping-dependence of luminescence in InP at very high excitation levels
GB1251301A (enrdf_load_stackoverflow)
ES309187A1 (es) Una disposicion para detectar radiacion
HAWRYLO et al. Luminescence due to Ge acceptors in GaAs(Photoluminescence in n- and p-type Ge doped GaAs and electroluminescence of Ge compensated diodes, noting two radiative emission bands)
GB1465691A (en) Electroluminescent devices and apparatus including such devices
ALFEROV et al. Photoluminescence of epitaxial n-type gallium arsenide films(Photoluminescence spectra of n-type GaAs films grown by gas transport reactions and from solution melt, noting recombination emission)