DE1797162C3 - Verfahren zur Herstellung eines elektrophotographischen Aufzeichnungsmaterials - Google Patents

Verfahren zur Herstellung eines elektrophotographischen Aufzeichnungsmaterials

Info

Publication number
DE1797162C3
DE1797162C3 DE1797162A DE1797162A DE1797162C3 DE 1797162 C3 DE1797162 C3 DE 1797162C3 DE 1797162 A DE1797162 A DE 1797162A DE 1797162 A DE1797162 A DE 1797162A DE 1797162 C3 DE1797162 C3 DE 1797162C3
Authority
DE
Germany
Prior art keywords
selenium
arsenic
alloy
layer
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1797162A
Other languages
German (de)
English (en)
Other versions
DE1797162B2 (de
DE1797162A1 (de
Inventor
Francis John Webster N.Y. Erhart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Ltd
Original Assignee
Rank Xerox Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rank Xerox Ltd filed Critical Rank Xerox Ltd
Publication of DE1797162A1 publication Critical patent/DE1797162A1/de
Publication of DE1797162B2 publication Critical patent/DE1797162B2/de
Application granted granted Critical
Publication of DE1797162C3 publication Critical patent/DE1797162C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE1797162A 1967-08-29 1968-08-23 Verfahren zur Herstellung eines elektrophotographischen Aufzeichnungsmaterials Expired DE1797162C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66398167A 1967-08-29 1967-08-29

Publications (3)

Publication Number Publication Date
DE1797162A1 DE1797162A1 (de) 1971-07-29
DE1797162B2 DE1797162B2 (de) 1979-09-20
DE1797162C3 true DE1797162C3 (de) 1985-10-10

Family

ID=24664016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1797162A Expired DE1797162C3 (de) 1967-08-29 1968-08-23 Verfahren zur Herstellung eines elektrophotographischen Aufzeichnungsmaterials

Country Status (6)

Country Link
JP (1) JPS5522783B1 (OSRAM)
BE (1) BE719980A (OSRAM)
DE (1) DE1797162C3 (OSRAM)
FR (1) FR1598952A (OSRAM)
GB (1) GB1227546A (OSRAM)
NL (1) NL161271C (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2250689C3 (de) * 1972-10-16 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektrofotografisches Röntgenaufnahmeverfahren
JPS5457434A (en) * 1977-10-18 1979-05-09 Stanley Electric Co Ltd Vacuum depositing method for selenium
JPS5492241A (en) * 1977-12-28 1979-07-21 Canon Inc Electrophotographic photoreceptor
JPS55159445A (en) * 1979-05-31 1980-12-11 Ricoh Co Ltd Electrophotographic receptor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2654853A (en) * 1949-02-28 1953-10-06 Rca Corp Photoelectric apparatus
DE1672153U (de) * 1951-12-24 1954-02-18 Zeiss Ikon Ag Strahlenempfindliche, aus amorphem selen bestehende halbleiterschicht.
DE898641C (de) * 1951-12-25 1953-12-03 Zeiss Ikon Ag Aus amorphem Selen bestehende Widerstandsschicht
US2970906A (en) * 1955-08-05 1961-02-07 Haloid Xerox Inc Xerographic plate and a process of copy-making
DE1250737B (OSRAM) * 1963-07-08
BE704447A (OSRAM) * 1966-10-03 1968-02-01

Also Published As

Publication number Publication date
NL161271C (nl) 1980-01-15
BE719980A (OSRAM) 1969-02-26
DE1797162B2 (de) 1979-09-20
NL161271B (nl) 1979-08-15
GB1227546A (OSRAM) 1971-04-07
NL6812278A (OSRAM) 1969-03-04
JPS5522783B1 (OSRAM) 1980-06-19
FR1598952A (OSRAM) 1970-07-15
DE1797162A1 (de) 1971-07-29

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)