DE1789062C3 - Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen - Google Patents
Verfahren zum Herstellen von Metallkontaktschichten für HalbleiteranordnungenInfo
- Publication number
- DE1789062C3 DE1789062C3 DE1789062A DE1789062A DE1789062C3 DE 1789062 C3 DE1789062 C3 DE 1789062C3 DE 1789062 A DE1789062 A DE 1789062A DE 1789062 A DE1789062 A DE 1789062A DE 1789062 C3 DE1789062 C3 DE 1789062C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- aluminum
- metal
- nickel
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
Landscapes
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1789062A DE1789062C3 (de) | 1968-09-30 | 1968-09-30 | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen |
| NL6913039A NL6913039A (https=) | 1968-09-30 | 1969-08-26 | |
| US861355A US3650826A (en) | 1968-09-30 | 1969-09-26 | Method for producing metal contacts for mounting semiconductor components in housings |
| CH1453669A CH504101A (de) | 1968-09-30 | 1969-09-26 | Verfahren zum Herstellen eines mit einer Metallkontaktschicht versehenen Halbleiterbauelementes, das in ein Gehäuse einzubauen ist |
| GB1229381D GB1229381A (https=) | 1968-09-30 | 1969-09-29 | |
| JP44077010A JPS4831506B1 (https=) | 1968-09-30 | 1969-09-29 | |
| AT919269A AT303119B (de) | 1968-09-30 | 1969-09-29 | Verfahren zum Herstellen von Metallkontaktschichten für den Einbau von Halbleiterbauelementen in Gehäuse |
| FR6933103A FR2032259A1 (https=) | 1968-09-30 | 1969-09-29 | |
| SE13466/69A SE340849B (https=) | 1968-09-30 | 1969-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1789062A DE1789062C3 (de) | 1968-09-30 | 1968-09-30 | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1789062A1 DE1789062A1 (de) | 1972-01-05 |
| DE1789062B2 DE1789062B2 (de) | 1978-03-30 |
| DE1789062C3 true DE1789062C3 (de) | 1978-11-30 |
Family
ID=5706784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1789062A Expired DE1789062C3 (de) | 1968-09-30 | 1968-09-30 | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3650826A (https=) |
| JP (1) | JPS4831506B1 (https=) |
| AT (1) | AT303119B (https=) |
| CH (1) | CH504101A (https=) |
| DE (1) | DE1789062C3 (https=) |
| FR (1) | FR2032259A1 (https=) |
| GB (1) | GB1229381A (https=) |
| NL (1) | NL6913039A (https=) |
| SE (1) | SE340849B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3872419A (en) * | 1972-06-15 | 1975-03-18 | Alexander J Groves | Electrical elements operable as thermisters, varisters, smoke and moisture detectors, and methods for making the same |
| US3922385A (en) * | 1973-07-02 | 1975-11-25 | Gen Motors Corp | Solderable multilayer contact for silicon semiconductor |
| US4293587A (en) * | 1978-11-09 | 1981-10-06 | Zilog, Inc. | Low resistance backside preparation for semiconductor integrated circuit chips |
| WO1982002457A1 (en) * | 1980-12-30 | 1982-07-22 | Finn John B | Die attachment exhibiting enhanced quality and reliability |
| SE8306663L (sv) * | 1982-12-08 | 1984-06-09 | Int Rectifier Corp | Forfarande for framstellning av halvledaranordning |
| US4965173A (en) * | 1982-12-08 | 1990-10-23 | International Rectifier Corporation | Metallizing process and structure for semiconductor devices |
| DE3426200C2 (de) * | 1984-07-17 | 1994-02-10 | Asea Brown Boveri | Überbrückungselement |
| DE3426199C2 (de) * | 1984-07-17 | 1994-02-03 | Asea Brown Boveri | Überbrückungselement |
| NL8600021A (nl) * | 1986-01-08 | 1987-08-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht. |
| US4921158A (en) * | 1989-02-24 | 1990-05-01 | General Instrument Corporation | Brazing material |
| US5008735A (en) * | 1989-12-07 | 1991-04-16 | General Instrument Corporation | Packaged diode for high temperature operation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL298258A (https=) * | 1962-05-25 | 1900-01-01 | ||
| GB1053069A (https=) * | 1963-06-28 | |||
| US3465209A (en) * | 1966-07-07 | 1969-09-02 | Rca Corp | Semiconductor devices and methods of manufacture thereof |
| US3523223A (en) * | 1967-11-01 | 1970-08-04 | Texas Instruments Inc | Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing |
-
1968
- 1968-09-30 DE DE1789062A patent/DE1789062C3/de not_active Expired
-
1969
- 1969-08-26 NL NL6913039A patent/NL6913039A/xx unknown
- 1969-09-26 CH CH1453669A patent/CH504101A/de not_active IP Right Cessation
- 1969-09-26 US US861355A patent/US3650826A/en not_active Expired - Lifetime
- 1969-09-29 FR FR6933103A patent/FR2032259A1/fr not_active Withdrawn
- 1969-09-29 AT AT919269A patent/AT303119B/de not_active IP Right Cessation
- 1969-09-29 GB GB1229381D patent/GB1229381A/en not_active Expired
- 1969-09-29 JP JP44077010A patent/JPS4831506B1/ja active Pending
- 1969-09-30 SE SE13466/69A patent/SE340849B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3650826A (en) | 1972-03-21 |
| FR2032259A1 (https=) | 1970-11-27 |
| SE340849B (https=) | 1971-12-06 |
| JPS4831506B1 (https=) | 1973-09-29 |
| GB1229381A (https=) | 1971-04-21 |
| CH504101A (de) | 1971-02-28 |
| DE1789062A1 (de) | 1972-01-05 |
| NL6913039A (https=) | 1970-04-01 |
| DE1789062B2 (de) | 1978-03-30 |
| AT303119B (de) | 1972-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2514922C2 (de) | Gegen thermische Wechselbelastung beständiges Halbleiterbauelement | |
| DE1789062C3 (de) | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen | |
| DE2041497B2 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| WO1996017382A1 (de) | Lothöcker für die flip-chip-montage und verfahren zu dessen herstellung | |
| EP1157820B1 (de) | Elektrisch leitfähiges Metallband und Steckverbinder | |
| DE102014117410B4 (de) | Elektrisches Kontaktelement, Einpressstift, Buchse und Leadframe | |
| DE112010005383B4 (de) | Halbleitervorrichtung | |
| DE2218460C3 (de) | Elektrisches Kontaktmaterial | |
| DE1213922C2 (de) | Verfahren zur Herstellung einer leicht benetzbaren Metallschicht auf einer keramischen Unterlage fuer Halbleiterbauelemente | |
| DE2747087C2 (de) | Elektrischer Kontakt und Verfahren zu dessen Herstellung | |
| WO2005064756A1 (de) | Kohlebürste sowie verfahren und werkstoff zu ihrer herstellung | |
| EP0242590B1 (de) | Gasentladungsüberspannungsableiter | |
| WO2008080467A1 (de) | Anschlussdraht, verfahren zur herstellung eines solchen und baugruppe | |
| DE1816748C3 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE102016117389A1 (de) | Leistungshalbleiterchip und Verfahren zur Herstellung eines Leistungshalbleiterchips und Leistungshalbleitereinrichtung | |
| DE1621258B2 (de) | Kontaktstueck aus einem leitenden traeger aus einem unedlen metall und einem dreischichtigen verbundkontaktkoerper sowie dessen herstellungsverfahren | |
| DE102018208116A1 (de) | Kupferband zur Herstellung von elektrischen Kontakten und Verfahren zur Herstellung eines Kupferbandes und Steckverbinder | |
| DE1614653C3 (de) | Halbleiteranordnung hoher Strombelastbarkeit | |
| DE2853951A1 (de) | Kontaktplatte fuer halbleiter-bauelemente | |
| DE2930789C2 (de) | Halbleitervorrichtung | |
| DE69604144T2 (de) | Glasversiegelte halbleiteranordnung bestehend aus einem halbleiterkörper mit einer silber-kupfer-verbindungsschicht zwischen senke und verbindungsleitern | |
| DE69605989T2 (de) | Glasversiegelte halbleiteranordnung bestehend aus einem halbleiterkörper, der mittels einer silber-aluminium-verbindungsschicht mit einer senke verbunden ist | |
| CH664650A5 (de) | Elektrischer gleitkontakt, insbesondere fuer kommutierungssysteme. | |
| DE1218621B (de) | Siliziumgleichrichterelement mit einem kreisscheibenfoermigen Siliziumplaettchen | |
| DE3121826C2 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |