DE1764821B1 - In zwei richtungen schaltbarer thyristor - Google Patents
In zwei richtungen schaltbarer thyristorInfo
- Publication number
- DE1764821B1 DE1764821B1 DE19681764821 DE1764821A DE1764821B1 DE 1764821 B1 DE1764821 B1 DE 1764821B1 DE 19681764821 DE19681764821 DE 19681764821 DE 1764821 A DE1764821 A DE 1764821A DE 1764821 B1 DE1764821 B1 DE 1764821B1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- outer layer
- control electrode
- thyristor
- upper outer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5457767 | 1967-08-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1764821B1 true DE1764821B1 (de) | 1971-10-14 |
Family
ID=12974536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681764821 Pending DE1764821B1 (de) | 1967-08-25 | 1968-08-13 | In zwei richtungen schaltbarer thyristor |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1764821B1 (enExample) |
| FR (1) | FR1578544A (enExample) |
| GB (1) | GB1220894A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2261819A1 (de) * | 1971-12-29 | 1973-07-05 | Transistor Ag | Bidirektionaler thyristor mit verbesserten zuendeigenschaften |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1301193A (en) * | 1970-02-27 | 1972-12-29 | Mullard Ltd | Improvements in semiconductor devices |
| DE2115954C2 (de) * | 1971-04-01 | 1985-01-24 | General Electric Co., Schenectady, N.Y. | Thyristortriode |
| CH598696A5 (enExample) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie | |
| FR2585882B1 (fr) * | 1985-07-30 | 1988-06-24 | Thomson Csf | Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive |
| FR2968835A1 (fr) | 2010-12-09 | 2012-06-15 | St Microelectronics Tours Sas | Triac quatre quadrants |
| CN114783872B (zh) * | 2022-05-30 | 2024-09-10 | 福建福顺微电子有限公司 | 一种双向可控硅的制作方法及双向可控硅 |
-
1968
- 1968-08-13 DE DE19681764821 patent/DE1764821B1/de active Pending
- 1968-08-22 GB GB40182/68A patent/GB1220894A/en not_active Expired
- 1968-08-23 FR FR1578544D patent/FR1578544A/fr not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2261819A1 (de) * | 1971-12-29 | 1973-07-05 | Transistor Ag | Bidirektionaler thyristor mit verbesserten zuendeigenschaften |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1578544A (enExample) | 1969-08-14 |
| GB1220894A (en) | 1971-01-27 |
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